ONSEMI NUF6406MNT1G

NUF6406MN
Low Capacitance 6 Line
EMI Filter with ESD
Protection
This device is a 6 line EMI filter array for wireless applications.
Greater than −30 dB attenuation is obtained at frequencies from
800 MHz to 2.4 GHz. It also offers ESD protection−clamping
transients from static discharges. ESD protection is provided across all
capacitors.
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1
12
Cd
Cd
Cd
Cd
Features
• EMI Filtering and ESD Protection
• Integration of 30 Discrete Components
• Compliance with IEC61000−4−2 (Level 4)
•
•
•
•
2
> 8.0 kV (Contact)
DFN Package, 1.35 x 3.0 mm
Moisture Sensitivity Level 1
ESD Ratings:
Machine Model = C
Human Body Model = 3B
This is a Pb−Free Device*
3
10
Cd
Cd
Cd
Cd
Cd
Cd
Cd
Cd
4
Benefits
9
5
• Reduces EMI/RFI Emissions on a Data Line
• Integrated Solution Offers Cost and Space Savings in a DFN Package
• Reduces Parasitic Inductances Which Offer a More “Ideal” Low Pass
•
•
11
8
6
7
Filter Response
Integrated Solution Improves System Reliability
Compatible Footprint to BGA or Flip−Chip Package
(Top View)
Applications
•
•
•
•
•
MARKING
DIAGRAM
EMI Filtering and ESD Protection for Data Lines
Wireless Phones
PDAs and Handheld Products
Notebook Computers
LCD Displays
1
2
3
4
5
12
1
64
06
MG
G
1
DFN12
CASE 506AD
6
6406 = Specific Device Code
M
= Month
G
= Pb−Free Package
(Note: Microdot may be in either location)
GND
ORDERING INFORMATION
12
11
10
9
8
(Bottom View)
7
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 2
1
Device
Package
Shipping†
NUF6406MNT1G
DFN12
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NUF6406MN/D
NUF6406MN
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
VPP
8.0
kV
Operating Temperature Range
TOP
−40 to 85
°C
Storage Temperature Range
TSTG
−55 to 150
°C
TL
260
°C
Parameter
ESD Discharge IEC61000−4−2
Contact Discharge
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Test Conditions
Min
Typ
VBR
IR = 1.0 mA
6.0
7.0
Leakage Current
IR
VRWM = 3.0 V
Resistance
RA
IR = 20 mA
Capacitance (Notes 1 and 2)
Cd
Cut−Off Frequency (Note 3)
f3dB
Parameter
Maximum Reverse Working Voltage
Breakdown Voltage
Symbol
VRWM
Max
Unit
5.0
V
V
1.0
A
100
115
VR = 2.5 V, f = 1.0 MHz
13
16
pF
Above this frequency,
appreciable attenuation occurs
138
1. Measured at 25°C, VR = 2.5 V, f = 1.0 MHz.
2. Total line capacitance is 2 times the Diode Capacitance (Cd).
3. 50 source and 50 load termination.
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2
85
MHz
NUF6406MN
0
0
−5
10
−10
−20
S41 (dB)
S21 (dB)
−15
−20
−25
−30
−40
−50
−35
−60
−40
−70
−45
1.E+06
1.E+07
1.E+08
1.E+09
−80
1.E+06
1.E+10
1.E+07
1.E+08
1.E+09
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 1. Insertion Loss Characteristic
Figure 2. Analog Crosstalk
1.E+10
110
2
108
106
1.5
RESISTANCE ()
NORMALIZED CAPACITANCE
−30
1
0.5
104
102
100
98
96
94
92
0
0
1
2
3
4
90
−40
5
REVERSE VOLTAGE (V)
−20
0
20
40
60
TEMPERATURE (°C)
Figure 4. Typical Resistance over
Temperature
Figure 3. Typical Capacitance vs.
Reverse Biased Voltage
(Normalized Capacitance, Cd @ 2.5 V)
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3
80
NUF6406MN
PACKAGE DIMENSIONS
DFN12 3.0*1.35*0.85
CASE 506AD−01
ISSUE F
2X
0.15 C
A
(A3)
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
5. EXPOSED PADS CONNECTED TO DIE FLAG.
USED AS TEST CONTACTS.
B
E
EXPOSED Cu
2X
0.15 C
TOP VIEW
PIN ONE
REFERENCE
(A3)
0.10 C
A
12 X
0.08 C
A1
C
MILLIMETERS
MIN
MAX
0.80
1.00
0.00
0.05
0.20 REF
0.18
0.30
3.00 BSC
2.10
2.30
1.35 BSC
0.20
0.40
0.50 BSC
0.20
−−−
0.20
0.40
D2
L
e
1
12 X K
SEATING
PLANE
SIDE VIEW
2X
0.2 X 0.25 MM
NOTE 5
12 X
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
12
EXPOSED PAD
6
E2
7
12 X
b
SOLDERING FOOTPRINT*
2.352
0.093
BOTTOM VIEW
0.10 C A B
0.05 C
NOTE 3
0.351
0.014
0.479
0.019
0.265
0.01
SCALE 16:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Phone: 81−3−5773−3850
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For additional information, please contact your
local Sales Representative.
NUF6406MN/D