NPN BDY57 – BDY58 SILICON TRANSISTORS, DIFFUSED MESA The BDY57 and BDY58 are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Switching. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value BDY57 BDY58 BDY57 BDY58 VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO IC IB PTOT TJ TS Emitter-Base Voltage Collector Current Base Current Power Dissipation @ TC = 25° Junction Temperature Storage Temperature Unit 80 125 120 160 10 25 6 175 -65 to +200 V A A W °C Value Unit 1 °C/W V V THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case 09/11/2012 COMSET SEMICONDUCTORS 1|3 NPN BDY57 – BDY58 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) V(BR)CBO V(BR)EBO ICBO ICER IEBO VCE(SAT) Ratings Test Condition(s) Collector-Emitter Breakdown Voltage (*) Collector-Base Breakdown Voltage (*) Emitter-Base Breakdown Voltage (*) Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Collector-Emitter saturation Voltage (*) IC=100 mA, IB=0 IC=5.0mA, IE=0 IE=5.0 A, IC=0 VCB=120 V, IE=0 V VCE=80 V, RBE=10 TCASE=100°C VEB=10 V, IC=0 V IC=10 A, IB=1.0 A VCE=4 V, IC=10 A h21E Static Forward Current transfer ratio (*) VCE=4 V, IC=20 A VCE=4 V, IC=10 A TCASE=-30°C VCE=15 V, IC=1.0 A f=10 MHz fT Transition Frequency td + tr Turn-on time IC=15 A, IB=1.5 A ts + tf Turn-off time IC=15 A, IB1=1.5 A IB2=-1.5 A BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 Min Typ Max Unit 80 125 120 160 - - - 0.5 1.4 V - - 1.0 0.5 mA - - 10 mA - 0.25 0.5 mA - 0.5 1.4 V 20 - 60 - 15 - 10 - - 10 30 - MHz - 0.25 1 µs - 1 2 µs (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 09/11/2012 COMSET SEMICONDUCTORS 2|3 V V V NPN BDY57 – BDY58 MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) min A B C D E G N P R U V 11 0.97 1.5 8.32 19 10.70 16.50 25 3.84 38.50 29.90 Pin 1 : Pin 2 : Case : typ max - 13.10 1.15 1.65 8.92 22 11.1 17.20 27,20 4.21 40.13 30.40 Base Emitter Collector Revised October 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 09/11/2012 [email protected] COMSET SEMICONDUCTORS 3|3