IRF IRF9395MPBF Isolation switch for input power or battery application Datasheet

PD - 96332A
IRF9395MPbF
IRF9395MTRPbF
DirectFET™ dual P-Channel Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
-30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V
Applications
l Isolation Switch for Input Power or Battery Application
Features and Benefits
Qg tot
Qgd
Qgs2
Qrr
Qoss
Vgs(th)
32nC
15nC
3.2nC
62nC
23nC
-1.8V
Q1-Q2
l Environmentaly Friendly Product
l RoHs Compliant Containing no Lead,
G
no Bromide and no Halogen
l Dual Common-Drain P-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on)
D
G
S
S
S
S
D
DirectFET™ ISOMETRIC
MC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
MC
Description
The IRF9395MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFETTM packaging
to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
Orderable part number
Package Type
IRF9395MTRPbF
IRF9395MTR1PbF
DirectFET Medium Can
DirectFET Medium Can
Absolute Maximum Ratings
Max.
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
g
Typical RDS(on) (mΩ)
24
ID = -14A
20
16
12
T J = 125°C
8
4
T J = 25°C
0
2
4
6
8
10
12
14
16
18
20
-VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
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Units
-30
±20
-14
-11
-75
-110
e
e
f
-VGS, Gate-to-Source Voltage (V)
VDS
Note
Standard Pack
Form
Quantity
Tape and Reel
4800
Tape and Reel
1000
V
A
14.0
ID= -11A
12.0
VDS= -24V
VDS= -15V
10.0
VDS= -6V
8.0
6.0
4.0
2.0
0.0
0
20
40
60
80
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
1
12/2/10
IRF9395MTRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Conditions
Min.
Typ. Max. Units
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
-30
–––
–––
0.012
Static Drain-to-Source On-Resistance
–––
–––
5.3
9.0
V VGS = 0V, ID = -250µA
mV/°C Reference to 25°C, ID = -1.0mA
VGS = -10V, ID = -14A
7.0
mΩ
V
11.9
GS = -4.5V, ID = -11 A
VGS(th)
Gate Threshold Voltage
-1.3
-1.8
-2.4
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
-6.1
–––
–––
-1.0
mV/°C
Gate-to-Source Forward Leakage
–––
–––
–––
–––
-150
-100
Gate-to-Source Reverse Leakage
Forward Transconductance
–––
40
–––
–––
100
–––
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
IGSS
gfs
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
–––
–––
Total Gate Charge
–––
64
–––
Total Gate Charge
Pre- Vth Gate-to-Source Charge
–––
–––
32
6.5
–––
–––
Post -Vth Gate-to-Source Charge
Gate-to-Drain Charge
–––
–––
3.2
15
–––
–––
Gate Charge Overdrive
Switch charge (Qgs2 + Qgd)
h
h
VDS = VGS, ID = -50µA
µA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
nA
VGS = -20V
VGS = 20V
S
VDS = -15V, ID = -11A
VDS = -15V, VGS = -10V, ID = -11A
nC
VDS = -15V
VGS = -4.5V
ID = -11A
–––
7.3
–––
Output Charge
–––
–––
18.2
23
–––
–––
Gate Resistance
Turn-On Delay Time
–––
–––
15
16
–––
–––
Rise Time
Turn-Off Delay Time
–––
–––
142
76
–––
–––
Fall Time
–––
121
–––
Input Capacitance
Output Capacitance
–––
–––
3241
820
–––
–––
Reverse Transfer Capacitance
–––
466
–––
Min.
Typ. Max. Units
See Fig.15
nC
VDS = -16V, VGS = 0V
Ω
ns
h
VDD = -15V, VGS = -4.5V
ID = -11A
RG = 1.8Ω
See Fig.17
VGS = 0V
pF
VDS = -15V
ƒ = 1.0KHz
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
–––
–––
-57
A
ISM
Pulsed Source Current
(Body Diode)
–––
–––
-110
VSD
Diode Forward Voltage
Reverse Recovery Time
–––
–––
–––
43
-1.2
65
V
ns
Reverse Recovery Charge
–––
62
93
nC
trr
Qrr
g
Conditions
MOSFET symbol
D
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = -11A, VGS = 0V
h
TJ = 25°C, IF = -11A, ,VDD = -15V
di/dt = 260A/µs
h
Notes:
† Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF9395MTRPbF
Absolute Maximum Ratings
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
TJ
TSTG
Max.
Parameter
e
e
f
Units
2.1
1.3
57
270
-40 to + 150
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
W
°C
Thermal Resistance
e
i
j
fk
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
Typ.
Max.
Units
–––
12.5
20
–––
1.0
60
–––
–––
2.2
–––
°C/W
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case ,
Junction-to-PCB Mounted
Linear Derating Factor
e
0.02
W/°C
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
Thermal Response ( Z thJA )
10
1
0.1
τJ
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
1E-006
1E-005
0.0001
0.001
R1
R1
τJ
τ1
R2
R2
R3
R3
R4
R4
Ri (°C/W)
τA
τ1
τ2
τ2
τ3
τ4
τ3
Ci= τi/Ri
Ci= τi/Ri
0.01
τ4
τA
τi (sec)
10.609
0.239813
3.5414
0.007823
24.659
2.632793
21.032
18.15739
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 
Notes:
‡ Used double sided cooling, mounting pad with large heatsink.
ˆ Mounted on minimum footprint full size board with metalized
‰ Rθ is measured at TJ of approximately 90°C.
back and with small clip heatsink.
ƒ Surface mounted on 1 in. square Cu
board (still air).
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‰ Mounted to a PCB with small
clip heatsink (still air)
‰ Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
3
IRF9395MTRPbF
1000
1000
100
BOTTOM
TOP
-ID, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
TOP
VGS
-10V
-5.0V
-4.5V
-3.5V
-3.3V
-3.0V
-2.8V
-2.6V
100
10
1
-2.6V
0.1
10
-2.6V
≤60µs PULSE WIDTH
1
1
10
0.1
100
Fig 4. Typical Output Characteristics
Typical RDS(on) (Normalized)
-I D, Drain-to-Source Current (A)
ID = -14A
100
10
T J = 150°C
T J = 25°C
T J = -40°C
0.1
3
4
V GS = -10V
V GS = -4.5V
1.0
0.5
5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
-VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
38
100000
VGS = 0V,
f = 1 KHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
30
Typical RDS(on) ( mΩ)
10000
Ciss
Coss
1000
T J = 25°C
34
C oss = C ds + C gd
C, Capacitance(pF)
100
1.5
VDS = -15V
≤60µs PULSE WIDTH
2
10
Fig 5. Typical Output Characteristics
1000
1
1
-V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
1
≤60µs PULSE WIDTH
Tj = 150°C
Tj = 25°C
0.1
BOTTOM
VGS
-10V
-5.0V
-4.5V
-3.5V
-3.3V
-3.0V
-2.8V
-2.6V
Crss
Vgs = -4.5V
Vgs = -6.0V
Vgs = -8.0V
Vgs = -10V
Vgs = -12V
26
22
18
14
10
6
2
100
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
0
25
50
75
100
125
-I D, Drain Current (A)
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
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IRF9395MTRPbF
1000
T J = 150°C
T J = 25°C
T J = -40°C
100
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10
1
1ms
10
10ms
DC
1
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
100µs
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.01
-VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
9
6
3
0
75
100
125
10
100
3.0
2.5
2.0
1.5
ID = 50µA
ID = 250µA
ID = 1.0mA
1.0
ID = 1.0A
0.5
-75 -50 -25
150
0
25
50
75 100 125 150
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
1200
EAS , Single Pulse Avalanche Energy (mJ)
-I D, Drain Current (A)
12
50
1
Fig 11. Maximum Safe Operating Area
15
25
0.1
-VDS, Drain-to-Source Voltage (V)
ID
TOP
-1.2A
-1.9A
BOTTOM -11A
1000
800
600
400
200
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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5
IRF9395MTRPbF
Id
Vds
Vgs
L
VCC
DUT
0
20K
1K
Vgs(th)
S
Qgodr
Fig 15a. Gate Charge Test Circuit
Qgd
Qgs2 Qgs1
Fig 15b. Gate Charge Waveform
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
20V
+
- VDD
IAS
I AS
0.01Ω
tp
Fig 16a. Unclamped Inductive Test Circuit
VDS
VGS
RG
A
Fig 16b. Unclamped Inductive Waveforms
td(on)
RD
tr
t d(off)
tf
VGS
10%
D.U.T.
+
- VDD
90%
V10V
GS
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 17a. Switching Time Test Circuit
6
Fig 17b. Switching Time Waveforms
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IRF9395MTRPbF
D.U.T
Driver Gate Drive
+
ƒ
+
‚
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

RG
•
•
•
•
di/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
Re-Applied
Voltage
+
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
-
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET™ Board Footprint, MC Outline
(Medium Size Can, C-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
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G
G
S
S
S
S
D
D
7
IRF9395MTRPbF
DirectFET™ Outline Dimension, MC Outline
(Medium Size Can, C-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes
all recommendations for stencil and substrate designs.
DIMENSIONS
CODE
A
B
C
D
E
F
G
H
J
J1
K
L
M
N
P
METRIC
MIN MAX
6.25 6.35
4.80 5.05
3.85 3.95
0.35 0.45
0.58 0.62
0.58 0.62
0.58 0.62
1.18 1.22
0.56 0.60
1.98 2.02
1.02 1.06
2.22 2.26
0.59 0.70
0.03 0.08
0.08 0.17
IMPERIAL
MIN
MAX
0.246
0.250
0.189
0.201
0.152
0.156
0.014
0.018
0.023
0.024
0.023
0.024
0.023
0.024
0.047
0.048
0.022
0.023
0.078
0.079
0.040
0.041
0.088
0.089
0.023
0.028
0.001
0.003
0.003
0.007
DirectFET™ Part Marking
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
8
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IRF9395MTRPbF
DirectFET™ Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF9395MTRPBF). For 1000 parts on 7"
reel, order IRF9395MTR1PBF
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
DIMENSIONS
METRIC
IMPERIAL
MIN
MAX
MIN
MAX
0.311
7.90
0.319
8.10
0.154
4.10
3.90
0.161
0.469
11.90
0.484
12.30
0.215
5.55
5.45
0.219
0.201
5.10
0.209
5.30
0.256
6.70
6.50
0.264
0.059
1.50
N.C
N.C
0.059
1.60
1.50
0.063
REEL DIMENSIONS
TR1 OPTION (QTY 1000)
STANDARD OPTION (QTY 4800)
METRIC
METRIC
IMPERIAL
IMPERIAL
MAX
MIN
MIN
CODE
MAX
MAX
MAX
MIN
MIN
6.9
12.992
N.C
A
N.C
N.C
N.C
330.0
177.77
N.C
0.75
0.795
B
N.C
20.2
19.06
N.C
N.C
0.53
0.504
C
0.50
13.5
12.8
13.2
0.520
12.8
N.C
0.059
0.059
D
N.C
1.5
1.5
N.C
N.C
2.31
3.937
E
N.C
58.72
100.0
N.C
N.C
N.C
F
N.C
N.C
0.53
N.C
N.C
18.4
0.724
13.50
0.47
0.488
G
N.C
0.567
12.4
11.9
14.4
12.01
H
0.47
0.469
0.606
N.C
11.9
11.9
15.4
12.01
Qualification Information†
Qualification level
Moisture Sensitivity Level
RoHS Compliant
†
††
†††
Consumer
††
(per JEDEC JESD47F
†††
guidelines)
MSL3
DirectFET
†††
(per JEDEC J-STD-020D
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/2010
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9
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