MBD110DWT1, MBD330DWT1, MBD770DWT1 Preferred Device Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six−leaded package. The SOT−363 is ideal for low−power surface mount applications where board space is at a premium, such as portable products. http://onsemi.com Anode 1 6 Cathode N/C 2 5 N/C Cathode 3 4 Anode Surface Mount Comparisons: SOT−363 SOT−23 4.6 120 2 7.6 225 1 (mm2) Area Max Package PD (mW) Device Count 1 Space Savings: Package 1 SOT−23 2 SOT−23 40% 70% SOT−363 SC−88 / SOT−363 CASE 419B STYLE 6 The MBD110DW, MBD330DW, and MBD770DW devices are spin−offs of our popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT−23 devices. They are designed for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. MARKING DIAGRAM Features • • • • 6 Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage Pb−Free Packages are Available xx M G G 1 MAXIMUM RATINGS xx Rating Symbol Value Unit VR 7.0 30 70 V Forward Power Dissipation TA = 25°C PF 120 mW Junction Temperature TJ −55 to +125 °C Tstg −55 to +150 Reverse Voltage MBD110DWT1 MBD330DWT1 MBD770DWT1 Storage Temperature Range °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 5 1 = Device Code Refer to Ordering Table, page 2 M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBD110DWT1/D MBD110DWT1, MBD330DWT1, MBD770DWT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Breakdown Voltage (IR = 10 mA) Min Typ Max 7.0 30 70 10 − − − − − − 0.88 1.0 − − 0.9 0.5 1.5 1.0 − − − 0.02 13 9.0 0.25 200 200 − 6.0 − − − − − − 0.5 0.38 0.52 0.42 0.7 0.6 0.45 0.6 0.5 1.0 V(BR)R MBD110DWT1 MBD330DWT1 MBD770DWT1 Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1) MBD110DWT1 Total Capacitance (VR = 15 Volts, f = 1.0 MHz) (VR = 20 Volts, f = 1.0 MHz) MBD330DWT1 MBD770DWT1 Reverse Leakage (VR = 3.0 V) (VR = 25 V) (VR = 35 V) MBD110DWT1 MBD330DWT1 MBD770DWT1 Noise Figure (f = 1.0 GHz, Note 2) MBD110DWT1 V CD pF CT pF IR NF Forward Voltage (IF = 10 mA) (IF = 1.0 mA) (IF = 10 mA) (IF = 1.0 mA) (IF = 10 mA) MBD770DWT1 mA nA nA dB VF MBD110DWT1 MBD330DWT1 Unit V ORDERING INFORMATION Device Marking Package MBD110DWT1 MBD110DWT1G SC−88 / SOT−363 M4 SC−88 / SOT−363 (Pb−Free) MBD330DWT1 MBD330DWT1G SC−88 / SOT−363 T4 SC−88 / SOT−363 (Pb−Free) MBD770DWT1 MBD770DWT1G Shipping † 3000 Units / Tape & Reel SC−88 / SOT−363 H5 SC−88 / SOT−363 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MBD110DWT1, MBD330DWT1, MBD770DWT1 TYPICAL CHARACTERISTICS MBD110DWT1 100 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 1.0 0.7 0.5 VR = 3.0 V 0.2 0.1 0.07 0.05 10 TA = 85°C TA = −40°C 1.0 0.02 TA = 25°C MBD110DWT1 0.01 30 40 50 60 70 80 90 100 110 TA, AMBIENT TEMPERATURE (°C) 120 MBD110DWT1 0.1 0.3 130 0.4 Figure 1. Reverse Leakage 0.8 11 LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (Test Circuit Figure 5) 10 9 0.9 NF, NOISE FIGURE (dB) C , CAPACITANCE (pF) D 0.7 Figure 2. Forward Voltage 1.0 0.8 0.7 8 7 6 5 4 3 2 MBD110DWT1 0.6 0.5 0.6 VF, FORWARD VOLTAGE (VOLTS) 0 1.0 2.0 3.0 VR, REVERSE VOLTAGE (VOLTS) 1 0.1 4.0 Figure 3. Capacitance MBD110DWT1 0.2 0.5 1.0 2.0 5.0 PLO, LOCAL OSCILLATOR POWER (mW) 10 Figure 4. Noise Figure LOCAL OSCILLATOR UHF NOISE SOURCE H.P. 349A DIODE IN TUNED MOUNT NOISE FIGURE METER H.P. 342A IF AMPLIFIER NF = 1.5 dB f = 30 MHz NOTES ON TESTING AND SPECIFICATIONS Note 1 − CD and CT are measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). Note 2 − Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. Note 3 − LS is measured on a package having a short instead of a die, using an impedance bridge (Boonton Radio Model 250A RX Meter). Figure 5. Noise Figure Test Circuit http://onsemi.com 3 MBD110DWT1, MBD330DWT1, MBD770DWT1 TYPICAL CHARACTERISTICS MBD330DWT1 2.8 500 t , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) MBD330DWT1 f = 1.0 MHz 2.4 2.0 1.6 1.2 0.8 0.4 0 MBD330DWT1 400 KRAKAUER METHOD 300 200 100 0 0 3.0 6.0 9.0 12 15 18 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 0 Figure 6. Total Capacitance 20 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 Figure 7. Minority Carrier Lifetime 10 100 MBD330DWT1 IF, FORWARD CURRENT (mA) MBD330DWT1 IR, REVERSE LEAKAGE (m A) 10 TA = 100°C 1.0 TA = 75°C 0.1 TA = 85°C 1.0 TA = 25°C 0.01 TA = −40°C 10 0.001 TA = 25°C 0.1 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 0.2 Figure 8. Reverse Leakage 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) Figure 9. Forward Voltage http://onsemi.com 4 1.0 1.2 MBD110DWT1, MBD330DWT1, MBD770DWT1 TYPICAL CHARACTERISTICS MBD770DWT1 2.0 500 t , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) MBD770DWT1 f = 1.0 MHz 1.6 1.2 0.8 0.4 0 MBD770DWT1 400 KRAKAUER METHOD 300 200 100 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 0 50 10 Figure 10. Total Capacitance 40 60 30 50 70 IF, FORWARD CURRENT (mA) 80 90 100 Figure 11. Minority Carrier Lifetime 10 100 MBD770DWT1 IF, FORWARD CURRENT (mA) MBD770DWT1 IR, REVERSE LEAKAGE (m A) 20 TA = 100°C 1.0 TA = 75°C 0.1 10 TA = 85°C TA = −40°C 1.0 0.01 TA = 25°C 0.001 TA = 25°C 0.1 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 0.2 50 Figure 12. Reverse Leakage 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) Figure 13. Forward Voltage http://onsemi.com 5 1.6 2.0 MBD110DWT1, MBD330DWT1, MBD770DWT1 PACKAGE DIMENSIONS SC−88 / SC−70 / SOT−363 CASE 419B−02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e 6 5 4 1 2 3 HE DIM A A1 A3 b C D E e L HE −E− b 6 PL 0.2 (0.008) M E M STYLE 6: PIN 1. 2. 3. 4. 5. 6. A3 C A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 ANODE 2 N/C CATHODE 1 ANODE 1 N/C CATHODE 2 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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