NTZD5110N Small Signal MOSFET 60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563 Features • • • • • Low RDS(on) Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices http://onsemi.com V(BR)DSS D1 G1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V ID 294 mA Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) TA = 25°C TA = 85°C Steady State Continuous Drain Current (Note 1) tv5 s Power Dissipation (Note 1) TA = 25°C PD 250 mW ID 310 mA 225 PD 280 mW IDM 590 mA TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS 350 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C ESD 900 V Symbol Max Unit RqJA 500 °C/W tv5s Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Gate−Source ESD Rating (HBM, Method 3015) D2 G2 S1 N−Channel MOSFET S2 MARKING DIAGRAM 212 TA = 85°C 310 mA 2.5 W @ 4.5 V Load/Power Switches Driver Circuits: Relays, Lamps, Displays, Memories, etc. Battery Management/Battery Operated Systems Cell Phones, Digital Cameras, PDAs, Pagers, etc. Parameter ID Max 1.6 W @ 10 V 60 Applications • • • • RDS(on) MAX 6 1 SOT−563−6 CASE 463A S7 D S7 = Specific Device Code D = Date Code PINOUT: SOT−563 S1 1 6 D1 G1 2 5 G2 D2 4 S2 THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – t v 5 s (Note 1) 447 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu. area = 1.127 in sq [1 oz] including traces). © Semiconductor Components Industries, LLC, 2007 April, 2007 − Rev. 3 1 3 Top View ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Publication Order Number: NTZD5110N/D NTZD5110N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.) Parameter Symbol Test Condition Min Typ Max Unit Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 − − V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ − − 71 − mV/°C TJ = 25°C − − 1.0 mA TJ = 125°C − − 500 TJ = 25°C − − 100 nA VDS = 0 V, VGS = "20 V − − "10 mA VDS = 0 V, VGS = "10 V − − 450 nA VDS = 0 V, VGS = "5.0 V − − 150 nA VGS(TH) VGS = VDS, ID = 250 mA 1.0 − 2.5 V VGS(TH)/TJ − − 4.0 − mV/°C VGS = 10 V, ID = 500 mA − 1.19 1.6 W VGS = 4.5 V, ID = 200 mA − 1.33 2.5 VDS = 5.0 V, ID = 200 mA − 80 − S − 24.5 − pF − 4.2 − − 2.2 − − 0.7 − − 0.1 − − 0.3 − OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 60 V VGS = 0 V VDS = 50 V Gate−to−Source Leakage Current IGSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance RDS(on) gFS CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1.0 MHz, VDS = 20 V Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD − 0.1 − td(ON) − 12 − − 7.3 − − 63.7 − − 30.6 − TJ = 25°C − 0.8 1.2 TJ = 85°C − 0.7 − VGS = 4.5 V, VDS = 10 V; ID = 200 mA nC SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDD = 30 V, ID = 200 mA, RG = 10 W tf ns DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 200 mA 2. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces). 3. Pulse Test: pulse width v 300 ms, duty cycle v2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 V NTZD5110N TYPICAL CHARACTERISTICS 9.0 V 8.0 V 7.0 V 6.0 V 1.2 1.2 5.0 V 4.5 V VGS = 10 V 4.0 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.6 3.5 V 0.8 3.0 V 0.4 0.8 TJ = 25°C 0.4 2.5 V 0 2 4 0 6 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = 125°C TJ = 85°C TJ = 25°C 2.0 1.6 TJ = −55°C 1.2 0.8 0.4 0.2 0.4 0.6 0.8 1.0 1.2 6 3.2 VGS = 10 V 2.8 2.4 TJ = 125°C 2.0 TJ = 85°C 1.6 TJ = 25°C 1.2 TJ = −55°C 0.8 0.4 0 0 0.2 0.4 0.6 0.8 1.0 1.2 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Drain Current and Temperature Figure 4. On−Resistance vs. Drain Current and Temperature 2.4 2.2 2.0 ID = 500 mA 1.6 ID = 200 mA 1.2 0.8 0.4 4 Figure 2. Transfer Characteristics VGS = 4.5 V 0 2 Figure 1. On−Region Characteristics 2.4 0 0 TJ = −55°C VGS, GATE−TO−SOURCE VOLTAGE (V) 3.2 2.8 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 2 4 6 8 ID = 0.2 A 1.8 VGS = 10 V 1.4 1.0 0.6 −50 10 VGS = 4.5 V −25 0 25 50 75 100 125 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance vs. Gate−to−Source Voltage Figure 6. On−Resistance Variation with Temperature http://onsemi.com 3 150 NTZD5110N TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 30 C, CAPACITANCE (pF) Ciss 20 TJ = 25°C VGS = 0 V Coss 10 0 Crss 0 4 8 12 16 20 5 TJ = 25°C ID = 0.2 A 4 3 2 1 0 0 0.2 0.4 0.6 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 0.8 10 IS, SOURCE CURRENT (A) VGS = 0 V 1 TJ = 85°C TJ = 25°C 0.1 0.01 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current ORDERING INFORMATION Device Package Shipping NTZD5110NT1 SOT−563 3000 / Tape & Reel NTZD5110NT1G SOT−563 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NTZD5110N PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE D A −X− 6 5 1 G 2 C 4 3 B −Y− D 65 PL 0.08 (0.003) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. K DIM A B C D G J K S S J M X Y MILLIMETERS MIN MAX 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 BSC 0.08 0.18 0.10 0.30 1.50 1.70 INCHES MIN MAX 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 BSC 0.003 0.007 0.004 0.012 0.059 0.067 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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