IXYS IXGH48N60C3C1 Genx3tm 600v igbt w/ sic anti-parallel diode Datasheet

Preliminary Technical Information
IXGH48N60C3C1
GenX3TM 600V IGBT
w/ SiC Anti-Parallel
Diode
VCES
IC110
VCE(sat)
tfi(typ)
=
=
≤
=
600V
48A
2.5V
38ns
High Speed PT IGBT for
40 - 100kHz Switching
TO-247
Symbol
Test Conditions
VCES
TJ = 25°C to 150°C
Maximum Ratings
600
V
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C (Limited by Leads)
75
A
IC110
TC = 110°C
48
A
IF110
TC = 110°C
ICM
TC = 25°C, 1ms
IA
EAS
20
A
250
A
TC = 25°C
30
A
TC = 25°C
300
mJ
SSOA
VGE = 15V, TVJ = 125°C, RG = 3Ω
ICM = 100
(RBSOA)
Clamped Inductive Load
@ < VCES
PC
TC = 25°C
A
G
C
E
G = Gate
E = Emitter
z
z
z
z
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
Advantages
z
z
TL
1.6mm (0.062 in.) from Case for 10s
300
°C
z
TSOLD
Plastic Body for 10 Seconds
260
°C
z
FC
Mounting Torque
1.13/10
Nm/lb.in
6
g
z
z
VGE(th)
IC
= 250μA, VCE = VGE
ICES
VCE = VCES, VGE = 0V
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC
Characteristic Values
Min.
Typ.
Max.
3.0
5.5
© 2009 IXYS CORPORATION, All Rights Reserved
z
50 μA
1.75 mA
TJ = 125°C
= 30A, VGE = 15V, Note 1
TJ = 125°C
z
V
2.3
1.8
±100
nA
2.5
V
V
High Power Density
Low Gate Drive Requirement
Applications
z
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
= Collector
Optimized for Low Switching Losses
Square RBSOA
Anti-Parallel Schottky Diode
Fast Switching
Avalanche Rated
International Standard Package
W
Weight
C
TAB = Collector
Features
300
TJ
( TAB )
z
z
z
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100139A(06/09)
IXGH48N60C3C1
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
Cies
Coes
IC
Characteristic Values
Min.
Typ.
Max.
= 30A, VCE = 10V, Note 1
20
VCE = 25V, VGE = 0V, f = 1MHz
30
2120
420
S
pF
pF
50
pF
77
16
32
nC
nC
nC
19
ns
25
0.33
ns
mJ
Cres
Qg
Qge
Qgc
IC = 30A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
Inductive Load, TJ = 25°C
td(off)
VCE = 400V, RG = 3Ω
tfi
Note 2
IC = 30A, VGE = 15V
60
100
ns
0.42
mJ
38
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
TO-247 AD Outline
0.23
Inductive Load, TJ = 125°C
IC = 30A, VGE = 15V
VCE = 400V, RG = 3Ω
Note 2
RthJC
RthCS
ns
19
28
0.37
92
95
0.57
ns
ns
mJ
ns
ns
mJ
0.21
0.42 °C/W
°C/W
∅P
e
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
Reverse Diode (SiC)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VF
IF = 20A, VGE = 0V, Note 1
Characteristic Values
Min.
Typ.
Max.
1.65
1.80
TJ = 125°C
RthJC
Notes
2.10
V
V
0.90 °C/W
1. Pulse test, t ≤ 300μs, duty c ycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGH48N60C3C1
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
60
300
VGE = 15V
13V
11V
50
IC - Amperes
40
IC - Amperes
VGE = 15V
250
9V
30
20
13V
200
150
11V
100
9V
50
10
7V
7V
0
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0
3.2
2
4
6
8
10
Fig. 3. Output Characteristics
@ 125ºC
14
16
18
20
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
1.2
60
VGE = 15V
13V
11V
50
VGE = 15V
1.1
VCE(sat) - Normalized
I
40
IC - Amperes
12
VCE - Volts
VCE - Volts
9V
30
20
1.0
C
= 60A
0.9
I
0.8
C
= 30A
0.7
7V
10
0.6
0
I
= 15A
0.5
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
25
50
75
VCE - Volts
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
100
5.0
90
TJ = 25ºC
4.5
80
70
I
3.5
C
IC - Amperes
4.0
VCE - Volts
C
= 60A
30A
15A
3.0
60
TJ = 125ºC
25ºC
- 40ºC
50
40
30
20
2.5
10
2.0
0
7
8
9
10
11
12
VGE - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
13
14
15
5.0
5.5
6.0
6.5
7.0
7.5
VGE - Volts
8.0
8.5
9.0
9.5
10.0
IXGH48N60C3C1
Fig. 8. Gate Charge
Fig. 7. Transconductance
50
16
TJ = - 40ºC
45
14
VCE = 300V
12
I G = 10 mA
I C = 30A
40
25ºC
30
10
VGE - Volts
g f s - Siemens
35
125ºC
25
20
8
6
15
4
10
2
5
0
0
0
10
20
30
40
50
60
70
80
90
100
110
0
120
10
20
30
50
60
70
80
Fig. 10. Reverse-Bias Safe Operating Area
Fig. 9. Capacitance
110
10,000
f = 1 MHz
100
Cies
Capacitance - PicoFarads
40
QG - NanoCoulombs
IC - Amperes
90
80
IC - Amperes
1,000
Coes
100
Cres
5
10
15
20
25
60
50
40
30
TJ = 125ºC
20
RG = 3Ω
dV / dt < 10V / ns
10
0
200
10
0
70
30
35
40
250
300
350
400
450
500
550
600
650
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z (th)JC - ºC / W
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXYS REF: G_48N60C3C1(5D)6-04-09
IXGH48N60C3C1
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
2.4
1.8
2.4
Eon -
---
1.4
E off - MilliJoules
= 60A
1.2
1.2
0.8
0.8
----
1.6
1.4
VCE = 400V
1.2
1.2
1.0
1.0
Eon - MilliJoules
1.6
C
E on - MilliJoules
1.6
Eon
0.8
0.8
TJ = 125ºC
0.6
0.6
TJ = 25ºC
0.4
0.4
0.2
0.0
0.0
0
5
10
15
20
25
30
0.2
0.0
0.0
15
35
20
25
30
RG - Ohms
2.0
1.6
RG = 3Ω , VGE = 15V
Eon
0.8
0.6
0.6
0.4
0.4
I C = 30A
55
65
75
250
110
200
I
C
= 60A
100
I
85
95
105
0.0
125
115
100
80
50
0
5
10
15
20
25
30
35
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
td(off) - - - -
RG = 3Ω , VGE = 15V
120
160
110
140
120
tf i
td(off) - - - -
110
RG = 3Ω , VGE = 15V
90
TJ = 125ºC
80
60
70
40
t f i - Nanoseconds
100
VCE = 400V
120
100
I
100
C
= 60A
90
80
80
I
60
60
40
50
20
C
= 30A
70
60
TJ = 25ºC
20
15
20
25
30
35
40
45
50
IC - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
55
60
25
35
45
t d(off) - Nanoseconds
100
t d(off) - Nanoseconds
VCE = 400V
80
150
= 30A
RG - Ohms
160
120
C
90
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
tfi
300
120
TJ - Degrees Centigrade
140
td(off) - - - -
TJ = 125ºC, VGE = 15V
0.2
0.0
45
- MilliJoules
0.8
35
60
t d(off) - Nanoseconds
E
1.0
I C = 60A
25
on
1.2
0.2
55
VCE = 400V
1.4
1.2
tfi
130
1.6
1.0
50
350
1.8
----
VCE = 400V
1.4
45
140
t f i - Nanoseconds
Eoff
40
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
2.0
1.8
35
IC - Amperes
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
Eoff - MilliJoules
0.4
0.4
I C = 30A
t f i - Nanoseconds
1.8
RG = 3Ω , VGE = 15V
2.0
VCE = 400V
I
Eoff
1.6
TJ = 125ºC , VGE = 15V
Eoff - MilliJoules
Eoff
2.0
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
55
65
75
85
95
TJ - Degrees Centigrade
105
115
50
125
IXGH48N60C3C1
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
80
tr i
120
td(on) - - - -
70
TJ = 125ºC, VGE = 15V
t r i - Nanoseconds
60
80
50
I C = 60A
60
40
40
I
C
30
= 30A
20
5
10
15
20
25
30
td(on) - - - -
VCE = 400V
TJ = 25ºC, 125ºC
80
21
40
19
20
17
15
15
35
20
25
30
35
26
23
60
22
I C = 60A
50
21
40
20
30
19
C = 30A
55
65
60
TJ = 25ºC
TJ = 125ºC
30
20
10
18
10
45
40
24
70
35
55
25
t d(on) - Nanoseconds
t r i - Nanoseconds
td(on) - - - -
VCE = 400V
25
50
50
IF - Amperes
tr i
RG = 3Ω , VGE = 15V
20
45
Fig. 21. Forward Current vs. Forward Voltage
100
I
40
IC - Amperes
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
80
23
60
RG - Ohms
90
25
RG = 3Ω , VGE = 15V
0
10
0
tr i
100
20
0
27
t d(on) - Nanoseconds
100
t d(on) - Nanoseconds
VCE = 400V
120
t r i - Nanoseconds
140
75
85
95
105
115
17
125
0
0.0
0.4
0.8
1.2
TJ - Degrees Centigrade
1.6
2.0
2.4
2.8
3.2
VF - Volts
Fig. 22. Maximum Transient Thermal Impedance for Diode
1.00
Z (th)JC - ºC / W
0.10
0.01
0.00
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXYS REF: G_48N60C3C1(5D)6-04-09
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