MCR25D, MCR25M, MCR25N Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half−wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half−wave, silicon gate−controlled devices are needed. http://onsemi.com Features • • • • • • • • SCRs 25 AMPERES RMS 400 thru 800 VOLTS Blocking Voltage to 800 Volts On-State Current Rating of 25 Amperes RMS High Surge Current Capability − 300 Amperes Rugged, Economical TO−220AB Package Glass Passivated Junctions for Reliability and Uniformity Minimum and Maximum Values of IGT, VGT, and IH Specified for Ease of Design High Immunity to dv/dt − 100 V/msec Minimum @ 125°C Pb−Free Packages are Available* G A K MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR25D MCR25M MCR25N VDRM, VRRM On-State RMS Current (180° Conduction Angles; TC = 80°C) IT(RMS) 25 A ITSM 300 A I2t 373 A2sec PGM 20.0 W Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Forward Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) Forward Average Gate Power (t = 8.3 ms, TC = 80°C) Value V 1 400 600 800 PG(AV) 0.5 W Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 80°C) IGM 2.0 A Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 December, 2005 − Rev. 5 AY WW MCR25xG AKA Unit 1 2 TO−220AB CASE 221A−09 STYLE 3 3 A Y WW x G AKA = Assembly Location = Year = Work Week = D, M, or N = Pb−Free Package = Diode Polarity PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION Package Shipping MCR25D Device TO−220AB 50 Units / Rail MCR25DG TO−220AB (Pb−Free) 50 Units / Rail MCR25M TO−220AB 50 Units / Rail MCR25MG TO−220AB (Pb−Free) 50 Units / Rail MCR25N TO−220AB 50 Units / Rail MCR25NG TO−220AB (Pb−Free) 50 Units / Rail Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MCR25/D MCR25D, MCR25M, MCR25N THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Symbol Value Unit RqJC RqJA 1.5 62.5 °C/W TL 260 °C Junction−to−Case Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max − − − − 0.01 2.0 Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) IDRM IRRM TJ = 25°C TJ = 125°C mA ON CHARACTERISTICS Peak Forward On-State Voltage (Note 2) (ITM = 50 A) VTM − − 1.8 V Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) IGT 4.0 12 30 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) VGT 0.5 0.67 1.0 V Holding Current (VD =12 Vdc, Initiating Current = 200 mA, Gate Open) IH 5.0 13 40 mA Latching Current (VD = 12 V, IG = 30 mA) IL − 35 80 mA Critical Rate of Rise of Off−State Voltage (VD = 67% of Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dv/dt 100 250 − V/ms Critical Rate of Rise of On−State Current (IPK = 50 A, Pw = 30 msec, diG/dt = 1 A/msec, Igt = 50 mA) di/dt − − 50 A/ms DYNAMIC CHARACTERISTICS 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. Voltage Current Characteristic of SCR + Current Anode + VTM Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current on state IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region Anode − http://onsemi.com 2 IH + Voltage IDRM at VDRM Forward Blocking Region (off state) 40 1.0 35 0.9 VGT, GATE TRIGGER VOLTAGE (V) I GT, GATE TRIGGER CURRENT (mA) MCR25D, MCR25M, MCR25N 30 25 20 15 10 5 0 −40 −25 −10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 −40 −25 −10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) Figure 2. Typical Gate Trigger Voltage versus Junction Temperature I T , INSTANTANEOUS ON−STATE CURRENT (A) Figure 1. Typical Gate Trigger Current versus Junction Temperature Typical @ 25°C R(t) TRANSIENT THERMAL R (NORMALIZED) 100 Maximum @ 125°C 10 Maximum @ 25°C 1 0.1 1 Z +R qJC @ R(t) 0.1 0.01 0.5 0.9 1.3 1.7 2.1 2.5 2.9 0.1 VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) Figure 3. Typical On−State Characteristics 1 10 100 t, TIME (ms) 1000 1@10 4 Figure 4. Transient Thermal Response 100 IL , LATCHING CURRENT (mA) 100 I H , HOLDING CURRENT (mA) qJC(t) 10 10 1 −40 −25 −10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) 1 −40 −25 −10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Holding Current versus Junction Temperature Figure 6. Typical Latching Current versus Junction Temperature http://onsemi.com 3 P(AV), AVERAGE POWER DISSIPATION (WATTS) MCR25D, MCR25M, MCR25N 130 TC , CASE TEMPERATURE (° C) 120 a a = Conduction Angle 110 100 dc 90 80 a = 30° 0 60° 180° 90° 2 4 6 8 10 12 14 16 18 IT(RMS), RMS ON−STATE CURRENT (AMPS) 20 32 28 180° a 24 16 a = 30° 12 8 4 0 0 2 4 6 8 10 12 14 16 18 IT(AV), AVERAGE ON−STATE CURRENT (AMPS) 20 Figure 8. On State Power Dissipation Figure 7. Typical RMS Current Derating 2500 1200 Gate Cathode Open, (dv/dt does not depend on RGK) Gate−Cathode Open, (dv/dt does not depend on RGK) 2000 STATIC dv/dt (V/us) 1000 800 85°C 600 100°C 110°C 1500 VPK = 275 1000 VPK = 400 400 VPK = 600 TJ = 125°C 500 200 0 VPK = 800 0 200 300 400 500 600 700 800 80 85 90 VPK , Peak Voltage (Volts) Figure 9. Typical Exponential Static dv/dt Versus Peak Voltage 95 100 105 110 TJ, Junction Temperature (°C ) 1 CYCLE 280 260 240 220 200 TJ=125° C f=60 Hz 180 160 1 2 3 115 120 Figure 10. Typical Exponential Static dv/dt Versus Junction Temperature 300 I TSM, SURGE CURRENT (AMPS) STATIC dv/dt (V/us) 90° 60° a = Conduction Angle 20 dc 4 5 6 7 NUMBER OF CYCLES 8 9 Figure 11. Maximum Non−Repetitive Surge Current http://onsemi.com 4 10 125 MCR25D, MCR25M, MCR25N PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AA −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 CATHODE ANODE GATE ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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