Order this document by MC33102/D The MC33102 dual operational amplifier is an innovative design concept employing Sleep–Mode technology. Sleep–Mode amplifiers have two separate states, a sleepmode and an awakemode. In sleepmode, the amplifier is active and waiting for an input signal. When a signal is applied causing the amplifier to source or sink 160 µA (typically) to the load, it will automatically switch to the awakemode which offers higher slew rate, gain bandwidth, and drive capability. • Two States: “Sleepmode” (Micropower) and “Awakemode” (High Performance) • Switches from Sleepmode to Awakemode in 4.0 µs when Output Current Exceeds the Threshold Current (RL = 600 Ω) • Independent Sleepmode Function for Each Op Amp • • • • • • Standard Pinouts – No Additional Pins or Components Required Sleepmode State – Can Be Used in the Low Current Idle State as a Fully Functional Micropower Amplifier Automatic Return to Sleepmode when Output Current Drops Below Threshold No Deadband/Crossover Distortion; as Low as 1.0 Hz in the Awakemode Drop–in Replacement for Many Other Dual Op Amps ESD Clamps on Inputs Increase Reliability without Affecting Device Operation DUAL SLEEP–MODE OPERATIONAL AMPLIFIER SEMICONDUCTOR TECHNICAL DATA D SUFFIX PLASTIC PACKAGE CASE 751 (SO–8) 8 1 P SUFFIX PLASTIC PACKAGE CASE 626 8 1 Sleep–Mode is a trademark of Motorola, Inc. TYPICAL SLEEPMODE/AWAKEMODE PERFORMANCE Characteristic Sleepmode (Typical) Awakemode (Typical) Unit 45 750 µA Low Input Offset Voltage 0.15 0.15 mV High Output Current Capability 0.15 50 mA Low T.C. of Input Offset Voltage 1.0 1.0 µV/°C High Gain Bandwidth (@ 20 kHz) 0.33 4.6 MHz High Slew Rate 0.16 1.7 V/µs 28 9.0 nV/ √Hz Low Current Drain Low Noise (@ 1.0 kHz) PIN CONNECTIONS Output 1 1 2 Inputs 1 VEE 4 MAXIMUM RATINGS Ratings Symbol Value Unit VS + 36 V VIDR VIR (Note 1) V Output Short Circuit Duration (Note 2) tSC (Note 2) sec Maximum Junction Temperature Storage Temperature TJ Tstg +150 – 65 to +150 °C Maximum Power Dissipation PD (Note 2) mW Supply Voltage (VCC to VEE) Input Differential Voltage Range Input Voltage Range 3 NOTES: 1. Either or both input voltages should not exceed VCC or VEE. 2. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded (refer to Figure 1). VCC 7 Output 2 6 2 5 Inputs 2 (Dual, Top View) ORDERING INFORMATION Device MC33102D MC33102P Operating Temperature Range TA = – 40° to +85°C Motorola, Inc. 1996 MOTOROLA ANALOG IC DEVICE DATA 1 8 Package SO–8 Plastic DIP Rev 0 1 MC33102 Simplified Block Diagram Current Threshold Detector Fractional Load Current Detector Awake to Sleepmode Delay Circuit IHysteresis % of IL Buffer IL Vin Op Amp IBias Buffer IEnable CStorage Iref Vout RL Sleepmode Current Regulator Enable Awakemode Current Regulator Isleep Iawake DC ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = –15 V, TA = 25°C, unless otherwise noted.) Characteristics Figure Symbol Input Offset Voltage (RS = 50 Ω, VCM = 0 V, VO = 0 V) Sleepmode TA = +25°C TA = –40° to +85°C Awakemode TA = +25°C TA = –40° to +85°C 2 VIO Input Offset Voltage Temperature Coefficient (RS = 50 Ω, VCM = 0 V, VO = 0 V) TA = –40° to +85°C (Sleepmode and Awakemode) 3 Input Bias Current (VCM = 0 V, VO = 0 V) Sleepmode TA = +25°C TA = –40° to +85°C Awakemode TA = +25°C TA = –40° to +85°C Input Offset Current (VCM = 0 V, VO = 0 V) Sleepmode TA = +25°C TA = –40° to +85°C Awakemode TA = +25°C TA = –40° to +85°C 2 Min — Max Unit mV — — 0.15 — 2.0 3.0 — — 0.15 — 2.0 3.0 ∆VIO/∆T µV/°C — 4, 6 Typ 1.0 — IIB nA — — 8.0 — 50 60 — — 100 — 500 600 IIO nA — — 0.5 — 5.0 6.0 — — 5.0 — 50 60 MOTOROLA ANALOG IC DEVICE DATA MC33102 DC ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = –15 V, TA = 25°C, unless otherwise noted.) Characteristics Figure Symbol Common Mode Input Voltage Range (∆VIO = 5.0 mV, VO = 0 V) Sleepmode and Awakemode 5 VICR Large Signal Voltage Gain Sleepmode (RL = 1.0 MΩ) TA = +25°C TA = –40° to +85°C Awakemode (VO = ±10 V, RL = 600 Ω) TA = +25°C TA = –40° to +85°C 7 Output Voltage Swing (VID = ±1.0 V) Sleepmode (VCC = +15 V, VEE = –15 V) RL = 1.0 MΩ RL = 1.0 MΩ Awakemode (VCC = +15 V, VEE = –15 V) RL = 600 Ω RL = 600 Ω RL = 2.0 kΩ RL = 2.0 kΩ Awakemode (VCC = +2.5 V, VEE = –2.5 V) RL = 600 Ω RL = 600 Ω Max –14.8 +14.2 Unit — +13 AVOL kV/V 25 15 200 — — — 50 25 700 — — — 8, 9, 10 V VO + VO – +13.5 — +14.2 –14.2 — –13.5 VO + VO – VO + VO – +12.5 — +13.3 — +13.6 –13.6 +14 –14 — –12.5 — –13.3 VO + VO – +1.1 — +1.6 –1.6 — –1.1 80 90 — V 11 Power Supply Rejection (VCC/VEE = +15 V/–15 V, 5.0 V/–15 V, +15 V/–5.0 V) Sleepmode and Awakemode 12 CMR dB PSR dB 80 Output Transition Current Sleepmode to Awakemode (Source/Sink) (VS = ±15 V) (VS = ± 2.5 V) Awakemode to Sleepmode (Source/Sink) (VS = ±15 V) (VS = ± 2.5 V) 13, 14 Output Short Circuit Current (Awakemode) (VID = ±1.0 V, Output to Ground) Source Sink 15, 16 MOTOROLA ANALOG IC DEVICE DATA Typ V –13 — Common Mode Rejection (VCM = ±13 V) Sleepmode and Awakemode Power Supply Current (per Amplifier) (ACL = 1, VO = 0V) Sleepmode (VS = ±15 V) TA = +25°C TA = – 40° to +85°C Sleepmode (VS = ± 2.5 V) TA = +25°C TA = – 40° to +85°C Awakemode (VS = ±15 V) TA = +25°C TA = – 40° to +85°C Min 100 — µA ITH1 200 250 160 200 — — — — 142 180 90 140 ITH2 ISC mA 50 50 17 110 110 — — µA ID — — 45 48 65 70 — — 38 42 65 — — — 750 800 800 900 3 MC33102 AC ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = –15 V, TA = 25°C, unless otherwise noted.) Characteristics Figure Symbol Slew Rate (Vin = –5.0 V to +5.0 V, CL = 50 pF, AV = 1.0) Sleepmode (RL = 1.0 MΩ) Awakemode (RL = 600 Ω) 18 SR Gain Bandwidth Product Sleepmode (f = 10 kHz) Awakemode (f = 20 kHz) 19 Sleepmode to Awakemode Transition Time (ACL = 0.1, Vin = 0 V to +5.0 V) RL = 600 Ω RL = 10 kΩ 20, 21 Awakemode to Sleepmode Transition Time 22 Unity Gain Frequency (Open Loop) Sleepmode (RL = 100 kΩ, CL = 0 pF) Awakemode (RL = 600 Ω, CL = 0 pF) 23, 25 Phase Margin Sleepmode (RL = 100 kΩ, CL = 0 pF) Awakemode (RL = 600 Ω, CL = 0 pF) 24, 26 29 Power Bandwidth (Awakemode) (VO = 10 Vpp, RL = 100 kΩ, THD ≤ 1%) Max 0.10 1.0 0.16 1.7 — — 0.25 3.5 0.33 4.6 — — GBW MHz µs ttr1 ttr2 30 DC Output Impedance (VO = 0 V, AV = 10, IQ = 10 µA) Sleepmode Awakemode 31 — — 4.0 15 — — — 1.5 — — — 200 2500 — — — — 13 12 — — — — 60 60 — — — 120 — — 20 — dB ∅M Degrees CS dB Cin 32 Equivalent Input Noise Current (f = 1.0 kHz) Sleepmode Awakemode 33 % — — — 0.005 0.016 0.031 — — — — — 1.0 k 96 — — — — 1.3 0.17 — — — — 0.4 4.0 — — — — 28 9.0 — — — — 0.01 0.05 — — Ω RO Differential Input Capacitance (VCM = 0 V) Sleepmode Awakemode Equivalent Input Noise Voltage (f = 1.0 kHz, RS = 100 Ω) Sleepmode Awakemode kHz THD Rin sec kHz AM Differential Input Resistance (VCM = 0 V) Sleepmode Awakemode Unit V/µs BWP Total Harmonic Distortion (VO = 2.0 Vpp, AV = 1.0) Awakemode (RL = 600 Ω) f = 1.0 kHz f = 10 kHz f = 20 kHz 4 Typ fU Gain Margin Sleepmode (RL = 100 kΩ, CL = 0 pF) Awakemode (RL = 600 Ω, CL = 0 pF) Channel Separation (f = 100 Hz to 20 kHz) Sleepmode and Awakemode Min MΩ pF nV/ √Hz en pA/ √Hz in MOTOROLA ANALOG IC DEVICE DATA Figure 1. Maximum Power Dissipation versus Temperature Figure 2. Distribution of Input Offset Voltage (MC33102D Package) 2500 50 PERCENT OF AMPLIFIERS (%) 2000 MC33102P 1500 MC33102D 500 0 –55 –40 –25 0 25 50 85 TA, AMBIENT TEMPERATURE (°C) 30 20 10 0 –1.0 –0.8 –0.6 –0.4 –0.2 0 0.2 0.4 0.6 VIO, INPUT OFFSET VOLTAGE (mV) 125 I IB, SLEEPMODE INPUT BIAS CURRENT (nA) PERCENT OF AMPLIFIERS (%) 204 Amplifiers tested from 3 wafer lots. VCC = +15 V VEE = –15 V TA = – 40°C to 85°C Percent Sleepmode Percent Awakemode 25 20 15 10 5.0 0 –5.0 –4.0 –3.0 –2.0 –1.0 0 1.0 2.0 3.0 4.0 5.0 VCC Sleepmode 8.5 VCC–0.5 VEE+1.0 VEE+0.5 VEE 80 Awakemode 7.5 6.5 70 –15 –10 –5.0 0 5.0 10 Awakemode VCC = +15 V VEE = –15 V ∆VIO = 5.0 mV Awakemode Sleepmode –55 –40 –25 0 25 50 TA, AMBIENT TEMPERATURE (°C) MOTOROLA ANALOG IC DEVICE DATA 85 125 60 15 Figure 6. Input Bias Current versus Temperature 100 10.0 Sleepmode 90 VCM, COMMON MODE INPUT VOLTAGE (V) I IB, SLEEPMODE INPUT BIAS CURRENT (nA) VICR, INPUT COMMON MODE VOLTAGE RANGE (V) Figure 5. Input Common Mode Voltage Range versus Temperature VCC = +15 V VEE = –15 V TA = 25°C 9.5 TCVIO, INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT (µV/°C) VCC–1.0 1.0 100 10.5 35 0.8 Figure 4. Input Bias Current versus Common Mode Input Voltage Figure 3. Input Offset Voltage Temperature Coefficient Distribution (MC33102D Package) 30 204 Amplifiers tested from 3 wafer lots. VCC = +15 V VEE = –15 V TA = 25°C I IB, AWAKEMODE INPUT BIAS CURRENT (nA) 1000 40 Percent Sleepmode Percent Awakemode Sleepmode 80 8.0 Awakemode 6.0 60 4.0 40 VCC = +15 V VEE = –15 V VCM = 0 V 2.0 0 –55 –40 –25 0 20 25 50 85 0 125 TA, AMBIENT TEMPERATURE (°C) 5 I IB, AWAKEMODE INPUT BIAS CURRENT (nA) PD(max), MAXIMUM POWER DISSIPATION (mW) MC33102 MC33102 Figure 8. Output Voltage Swing versus Supply Voltage 130 35 TA = 25°C VO, OUTPUT VOLTAGE (Vpp ) AVOL, OPEN LOOP VOLTAGE GAIN (dB) Figure 7. Open Loop Voltage Gain versus Temperature 120 Awakemode (RL = 1.0 MΩ) 110 Sleepmode (RL = 1.0 MΩ) 100 90 30 Sleepmode (RL = 1.0 MΩ) 25 20 Awakemode (RL = 600 Ω) 15 10 5 80 –55 –40 –25 0 25 50 85 TA, AMBIENT TEMPERATURE (°C) 0 125 0 VO, OUTPUT VOLTAGE SWING (Vpp) VO, OUTPUT VOLTAGE (Vpp ) 20 Sleepmode (RL = 1.0 MΩ) 15 10 Awakemode (RL = 600 Ω) VCC = +15 V VEE = –15 V AV = +1.0 TA = 25°C 5.0 0 100 15 18 1.0 k 10 k f, FREQUENCY (Hz) 100 k 25 20 Awakemode 15 5.0 10 500 k PSR, POWER SUPPLY REJECTION (dB) 80 Awakemode 60 Sleepmode 40 VCC = +15 V VEE = –15 V VCM = 0 V ∆VCM = ± 1.5 V TA = 25°C 1.0 k 10 k f, FREQUENCY (Hz) 100 k 100 1.0 k RL, LOAD RESISTANCE TO GROUND (Ω) 10 k Figure 12. Power Supply Rejection versus Frequency 100 100 VCC = +15 V VEE = –15 V f = 1.0 kHz TA = 25°C 10 Figure 11. Common Mode Rejection versus Frequency CMR, COMMON MODE REJECTION (dB) 12 30 25 6 9.0 Figure 10. Maximum Peak–to–Peak Output Voltage Swing versus Load Resistance 30 0 10 6.0 VCC, VEE, SUPPLY VOLTAGE (V) Figure 9. Output Voltage versus Frequency 20 3.0 1.0 M 120 100 +PSR Sleepmode +PSR Awakemode 80 –PSR Awakemode 60 40 20 0 10 VCC = +15 V VEE = –15 V ∆VCC = ± 1.5 V TA = 25°C 100 –PSR Sleepmode 1.0 k 10 k f, FREQUENCY (Hz) 100 k 1.0 M MOTOROLA ANALOG IC DEVICE DATA MC33102 Figure 13. Sleepmode to Awakemode Current Threshold versus Supply Voltage Figure 14. Awakemode to Sleepmode Current Threshold versus Supply Voltage 190 I TH2, CURRENT THRESHOLD ( µA) 190 180 TA = 25°C 170 TA = – 55°C 160 150 140 TA = 125°C 3.0 6.0 9.0 12 15 180 170 TA = 25°C 160 TA = 125°C 140 130 120 18 TA = – 55°C 150 3.0 6.0 Figure 15. Output Short Circuit Current versus Output Voltage 120 Sink 100 Source 80 60 VCC = +15 V VEE = –15 V VID = ± 1.0 V RL < 10 Ω Awakemode 40 20 0 0 3.0 6.0 9.0 VO, OUTPUT VOLTAGE (V) 12 15 1.0 50 0.8 Awakemode (mA) 45 0.6 Sleepmode (µA) 0.4 40 VCC = +15 V VEE = –15 V No Load MOTOROLA ANALOG IC DEVICE DATA 18 150 140 0.2 0 125 Source 130 120 VCC = +15 V VEE = –15 V VID = ± 1.0 V RL < 10 Ω Awakemode Sink 110 100 90 80 70 –55 –40 –25 0 25 50 85 TA, AMBIENT TEMPERATURE (°C) 0.20 SR, SLEW RATE (V/µ s) 55 0 25 50 85 TA, AMBIENT TEMPERATURE (°C) 15 125 Figure 18. Slew Rate versus Temperature I D , SUPPLY CURRENT PER AMPLIFIER (mA) I D , SUPPLY CURRENT PER AMPLIFIER (µ A) 1.2 60 30 –55 –40 –25 12 Figure 16. Output Short Circuit Current versus Temperature Figure 17. Power Supply Current Per Amplifier versus Temperature 35 9.0 VCC, VEE, SUPPLY VOLTAGE (V) I SC, OUTPUT SHORT CIRCUIT CURRENT (mA) I SC, OUTPUT SHORT CIRCUIT CURRENT (mA) VCC, VEE, SUPPLY VOLTAGE (V) 0.18 VCC = +15 V VEE = –15 V ∆Vin = – 5.0 V to + 5.0 V Awakemode (RL = 600 Ω) 2.0 1.8 0.16 1.6 0.14 1.4 0.12 SR, SLEW RATE (V/µ s) I TH1, CURRENT THRESHOLD ( µA) 200 1.2 Sleepmode (RL = 1.0 MΩ) 0.10 –55 –40 –25 0 25 50 85 TA, AMBIENT TEMPERATURE (°C) 1.0 125 7 MC33102 5.0 Awakemode (MHz) 4.5 4.0 3.5 350 Sleepmode (kHz) 300 250 VCC = +15 V VEE = –15 V f = 20 kHz 200 –55 –40 –25 0 25 50 85 TA, AMBIENT TEMPERATURE (°C) V P , PEAK VOLTAGE (1.0 V/DIV) Figure 20. Sleepmode to Awakemode Transition Time GBW, GAIN BANDWIDTH PRODUCT (KHz) GBW, GAIN BANDWIDTH PRODUCT (KHz) Figure 19. Gain Bandwidth Product versus Temperature RL = 10 k 125 t, TIME (5.0 µs/DIV) Figure 21. Sleepmode to Awakemode Transition Time Figure 22. Awakemode to Sleepmode Transition Time versus Supply Voltage RL = 600 Ω t tr2 , TRANSITION TIME (SEC) V P , PEAK VOLTAGE (1.0 V/DIV) 2.0 1.5 TA = 25°C 1.0 TA = – 55°C 0.5 TA = 125°C 0 3.0 t, TIME (2.0 µs/DIV) Figure 23. Gain Margin versus Differential Source Resistance ∅ m, PHASE MARGIN (DEG) A m , GAIN MARGIN (dB) 8 Sleepmode Sleepmode 11 5.0 10 18 70 13 7.0 9.0 12 15 VCC, VEE, SUPPLY VOLTAGE (V) Figure 24. Phase Margin versus Differential Source Resistance 15 9.0 6.0 Awakemode VCC = +15 V VEE = –15 V RT = R1 + R2 VO = 0 V TA = 25°C R1 VO R2 100 1.0 k 10 k RT, DIFFERENTIAL SOURCE RESISTANCE (Ω) 60 VCC = +15 V VEE = –15 V RT = R1 + R2 VO = 0 V TA = 25°C 50 40 30 Awakemode 20 R1 10 VO R2 0 10 100 1.0 k 10 k RT, DIFFERENTIAL SOURCE RESISTANCE (Ω) 100 k MOTOROLA ANALOG IC DEVICE DATA MC33102 Figure 25. Open Loop Gain Margin versus Output Load Capacitance Figure 26. Phase Margin versus Output Load Capacitance 70 ∅ m, PHASE MARGIN (DEGREES) 12 Sleepmode 10 8.0 Awakemode 6.0 VCC = +15 V VEE = –15 V VO = 0 V 4.0 2.0 0 10 100 CL, OUTPUT LOAD CAPACITANCE (pF) VCC = +15 V VEE = –15 V VO = 0 V 60 50 40 30 Awakemode 20 Sleepmode 10 0 1.0 k 10 100 1.0 k CL, OUTPUT LOAD CAPACITANCE (pF) Figure 28. Awakemode Voltage Gain and Phase versus Frequency Figure 27. Sleepmode Voltage Gain and Phase versus Frequency 50 1A 30 80 120 2A 10 160 1B TA = 25°C RL = 1.0 MΩ CL < 10 pF Sleepmode –10 –30 10 k 2B 200 100 k 1.0 M f, FREQUENCY (Hz) 70 40 AV, VOLTAGE GAIN (dB) 1A) Phase, VS = ±18 V 2A) Phase, VS = ± 2.5 V 1B) Gain, VS = ±18 V 2B) Gain, VS = ± 2.5 V θ , EXCESS PHASE (DEGREES) AV, VOLTAGE GAIN (dB) 70 TA = 25°C RL = 600 Ω CL < 10 pF Awakemode 50 30 10 2B 80 60 40 VCC = +15 V VEE = –15 V RL = 600 Ω Awakemode 20 0 100 1.0 k 10 k f, FREQUENCY (Hz) MOTOROLA ANALOG IC DEVICE DATA 100 k 160 1B 1A) Phase, VS = ±18 V 2A) Phase, VS = ± 2.5 V 1B) Gain, VS = ±18 V 2B) Gain, VS = ± 2.5 V –30 30 k 100 k 200 240 10 M 1.0 M f, FREQUENCY (Hz) Figure 30. Total Harmonic Distortion versus Frequency THD, TOTAL HARMONIC DISTORTION (%) CS, CHANNEL SEPARATION (dB) 100 80 120 2A Figure 29. Channel Separation versus Frequency 120 40 1A –10 240 10 M 140 10 k θ , EXCESS PHASE (DEGREES) Am, OPEN LOOP GAIN MARGIN (dB) 14 100 VCC = +15 V VEE = –15 V 10 RL = 600 Ω VO = 2.0 Vpp TA = 25°C Awakemode AV = +1000 1.0 AV = +100 0.1 AV = +10 AV = +1.0 0.01 0.001 100 1.0 k 10 k 100 k f, FREQUENCY (Hz) 9 MC33102 Figure 32. Input Referred Noise Voltage versus Frequency ZO , OUTPUT IMPEDANCE ( Ω ) 250 200 150 VCC = +15 V VEE = –15 V VCM = 0 V VO = 0 V TA = 25°C Awakemode AV = 100 100 50 AV = 10 AV = 1000 AV = 1.0 0 1.0 k 10 k 100 k f, FREQUENCY (Hz) 1.0 M 10 M en, INPUT REFERRED NOISE VOLTAGE (nV/ Hz) Figure 31. Awakemode Output Impedance versus Frequency 100 VCC = +15 V VEE = –15 V TA = 25°C 50 Sleepmode Awakemode 10 5.0 10 1.0 k f, FREQUENCY (Hz) 10 k 100 k 70 VCC = +15 V 0.8 V = –15 V EE TA = 25°C 0.6 (RS = 10 k) VO RS 0.4 Awakemode 0.2 Sleepmode 100 1.0 k f, FREQUENCY (Hz) 10 k 100 k os, PERCENT OVERSHOOT (%) i n, INPUT NOISE CURRENT (pA/ Hz) 1.0 VCC = +15 V 60 VEE = –15 V TA = 25°C 50 40 20 t, TIME (50 µs/DIV) R Awakemode (RL = 600 Ω) 10 0 10 100 CL, LOAD CAPACITANCE (pF) 1.0 k Figure 36. Awakemode Large Signal Transient Response RL = 600 Ω V P , PEAK VOLTAGE (5.0 V/DIV) V P , PEAK VOLTAGE (5.0 V/DIV) RL = Sleepmode (RL = 1.0 MΩ) 30 Figure 35. Sleepmode Large Signal Transient Response 10 100 Figure 34. Percent Overshoot versus Load Capacitance Figure 33. Current Noise versus Frequency 0.1 10 VO t, TIME (5.0 µs/DIV) MOTOROLA ANALOG IC DEVICE DATA MC33102 Figure 38. Awakemode Small Signal Transient Response R V P , PEAK VOLTAGE (50 mV/DIV) RL = CL = 0 pF RL = 600 Ω CL = 0 pF V P , PEAK VOLTAGE (50 mV/DIV) Figure 37. Sleepmode Small Signal Transient Response t, TIME (50 µs/DIV) t, TIME (50 µs/DIV) CIRCUIT INFORMATION The MC33102 was designed primarily for applications where high performance (which requires higher current drain) is required only part of the time. The two–state feature of this op amp enables it to conserve power during idle times, yet be powered up and ready for an input signal. Possible applications include laptop computers, automotive, cordless phones, baby monitors, and battery operated test equipment. Although most applications will require low power consumption, this device can be used in any application where better efficiency and higher performance is needed. The Sleep–Mode amplifier has two states; a sleepmode and an awakemode. In the sleepmode state, the amplifier is active and functions as a typical micropower op amp. When a signal is applied to the amplifier causing it to source or sink sufficient current (see Figure 13), the amplifier will automatically switch to the awakemode. See Figures 20 and 21 for transition times with 600 Ω and 10 kΩ loads. The awakemode uses higher drain current to provide a high slew rate, gain bandwidth, and output current capability. In the awakemode, this amplifier can drive 27 Vpp into a 600 Ω load with VS = ±15 V. An internal delay circuit is used to prevent the amplifier from returning to the sleepmode at every zero crossing. This delay circuit also eliminates the crossover distortion commonly found in micropower amplifiers. This amplifier can process frequencies as low as 1.0 Hz without the amplifier returning to sleepmode, depending on the load. The first stage PNP differential amplifier provides low noise performance in both the sleep and awake modes, and an all NPN output stage provides symmetrical source and sink AC frequency response. APPLICATIONS INFORMATION The MC33102 will begin to function at power supply voltages as low as VS = ±1.0 V at room temperature. (At this voltage, the output voltage swing will be limited to a few hundred millivolts.) The input voltages must range between VCC and VEE supply voltages as shown in the maximum rating table. Specifically, allowing the input to go more negative than 0.3 V below VEE may cause product damage. Also, exceeding the input common mode voltage range on either input may cause phase reversal, even if the inputs are between VCC and VEE. When power is initially applied, the part may start to operate in the awakemode. This is because of the currents generated due to charging of internal capacitors. When this occurs and the sleepmode state is desired, the user will have to wait approximately 1.5 seconds before the device will switch back to the sleepmode. To prevent this from occurring, ramp the power supplies from 1.0 V to full supply. Notice that the device is more prone to switch into the awakemode when VEE is adjusted than with a similar change in VCC. The amplifier is designed to switch from sleepmode to awakemode whenever the output current exceeds a preset MOTOROLA ANALOG IC DEVICE DATA current threshold (ITH) of approximately 160 µA. As a result, the output switching threshold voltage (VST) is controlled by the output loading resistance (RL). This loading can be a load resistor, feedback resistors, or both. Then: VST = (160 µA) × RL Large valued load resistors require a large output voltage to switch, but reduce unwanted transitions to the awakemode. For instance, in cases where the amplifier is connected with a large closed loop gain (ACL), the input offset voltage (VIO) is multiplied by the gain at the output and could produce an output voltage exceeding VST with no input signal applied. Small values of RL allow rapid transition to the awakemode because most of the transition time is consumed slewing in the sleepmode until VST is reached (see Figures 20, 21). The output switching threshold voltage VST is higher for larger values of RL, requiring the amplifier to slew longer in the slower sleepmode state before switching to the awakemode. 11 MC33102 The transition time (ttr1) required to switch from sleep to awake mode is: ttr1 = tD = ITH (RL/SRsleepmode) Where: tD = Amplifier delay (<1.0 µs) ITH = Output threshold current for = more transition (160 µA) RL = Load resistance SRsleepmode = Sleepmode slew rate (0.16 V/µs) Although typically 160 µA, ITH varies with supply voltage and temperature. In general, any current loading on the output which causes a current greater than ITH to flow will switch the amplifier into the awakemode. This includes transition currents such as those generated by charging load capacitances. In fact, the maximum capacitance that can be driven while attempting to remain in the sleepmode is approximately 1000 pF. CL(max) = ITH/SRsleepmode = 160 µA/(0.16 V/µs) = 1000 pF Any electrical noise seen at the output of the MC33102 may also cause the device to transition to the awakemode. To minimize this problem, a resistor may be added in series with the output of the device (inserted as close to the device as possible) to isolate the op amp from both parasitic and load capacitance. The awakemode to sleepmode transition time is controlled by an internal delay circuit, which is necessary to prevent the amplifier from going to sleep during every zero crossing. This time is a function of supply voltage and temperature as shown in Figure 22. Gain bandwidth product (GBW) in both modes is an important system design consideration when using a sleepmode amplifier. The amplifier has been designed to obtain the maximum GBW in both modes. “Smooth” AC transitions between modes with no noticeable change in the amplitude of the output voltage waveform will occur as long as the closed loop gains (ACL) in both modes are substantially equal at the frequency of operation. For smooth AC transitions: (ACLsleepmode) (BW) < GBWsleepmode Where: ACLsleepmode = Closed loop gain in ACLsleepmode = the sleepmode BW = The required system bandwidth BW = or operating frequency TESTING INFORMATION To determine if the MC33102 is in the awakemode or the sleepmode, the power supply currents (ID+ and ID–) must be measured. When the magnitude of either power supply current exceeds 400 µA, the device is in the awakemode. When the magnitudes of both supply currents are less than 400 µA, the device is in the sleepmode. Since the total supply current is typically ten times higher in the awakemode than the sleepmode, the two states are easily distinguishable. The measured value of ID+ equals the ID of both devices (for a dual op amp) plus the output source current of device A and the output source current of device B. Similarly, the measured value of ID– is equal to the ID– of both devices plus the output sink current of each device. Iout is the sum 12 of the currents caused by both the feedback loop and load resistance. The total Iout needs to be subtracted from the measured ID to obtain the correct ID of the dual op amp. An accurate way to measure the awakemode Iout current on automatic test equipment is to remove the Iout current on both Channel A and B. Then measure the ID values before the device goes back to the sleepmode state. The transition will take typically 1.5 seconds with ±15 V power supplies. The large signal sleepmode testing in the characterization was accomplished with a 1.0 MΩ load resistor which ensured the device would remain in sleepmode despite large voltage swings. MOTOROLA ANALOG IC DEVICE DATA MC33102 OUTLINE DIMENSIONS D SUFFIX PLASTIC PACKAGE CASE 751–05 (SO–8) ISSUE R D A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETERS. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. C 8 5 0.25 H E M B M 1 4 h B X 45 _ q e DIM A A1 B C D E e H h L A C SEATING PLANE L 0.10 A1 B 0.25 M C B S A S q P SUFFIX PLASTIC PACKAGE CASE 626–05 ISSUE K 8 5 –B– 1 –A– NOTE 2 L C J –T– DIM A B C D F G H J K L M N MILLIMETERS MIN MAX 9.40 10.16 6.10 6.60 3.94 4.45 0.38 0.51 1.02 1.78 2.54 BSC 0.76 1.27 0.20 0.30 2.92 3.43 7.62 BSC ––– 10_ 0.76 1.01 INCHES MIN MAX 0.370 0.400 0.240 0.260 0.155 0.175 0.015 0.020 0.040 0.070 0.100 BSC 0.030 0.050 0.008 0.012 0.115 0.135 0.300 BSC ––– 10_ 0.030 0.040 N SEATING PLANE D H NOTES: 1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS). 3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 4 F MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.18 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ M K G 0.13 (0.005) MOTOROLA ANALOG IC DEVICE DATA M T A M B M 13 MC33102 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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