Diodes DMG1016UDW Complementary pair enhancement mode mosfet Datasheet

DMG1016UDW
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
NEW PRODUCT
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Features
Mechanical Data
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair MOSFET
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
ESD Protected Up to 2.5kV
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 7
Ordering Information: See Page 7
Weight: 0.006 grams (approximate)
D1
G2
S2
Q2
Q1
S1
TOP VIEW
ESD PROTECTED
G1
D2
TOP VIEW
Internal Schematic
Maximum Ratings N-CHANNEL – Q1
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±6
V
ID
1066
690
mA
Symbol
Value
Unit
Drain Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±6
V
ID
845
548
mA
Value
Unit
Steady
State
Drain Current (Note 1)
TA = 25°C
TA = 85°C
Maximum Ratings P-CHANNEL – Q2
@TA = 25°C unless otherwise specified
Characteristic
Steady
State
Drain Current (Note 1)
TA = 25°C
TA = 85°C
Thermal Characteristics – Total Device
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1.
2.
3.
@TA = 25°C unless otherwise specified
Symbol
PD
330
mW
RθJA
379
°C/W
TJ, TSTG
-55 to +150
°C
Device mounted on FR-4 PCB with minimum recommended pad layout.
No purposefully added lead.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMG1016UDW
Document number: DS31860 Rev. 3 - 2
1 of 8
www.diodes.com
October 2009
© Diodes Incorporated
DMG1016UDW
NEW PRODUCT
Electrical Characteristics N-CHANNEL – Q1
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
-
-
100
±1.0
V
nA
μA
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±4.5V, VDS = 0V
VGS(th)
0.5
RDS (ON)
-
|Yfs|
VSD
-
1.0
0.45
0.6
0.75
1.2
V
Static Drain-Source On-Resistance
0.3
0.4
0.5
1.4
0.7
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 600mA
VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA
VDS = 10V, ID = 400mA
VGS = 0V, IS = 150mA
Ciss
Coss
Crss
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
60.67
9.68
5.37
736.6
93.6
116.6
5.1
7.4
26.7
12.3
-
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS (Note 5)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Electrical Characteristics P-CHANNEL – Q2
Ω
S
V
pF
pF
pF
pC
pC
pC
ns
ns
ns
ns
Test Condition
VDS = 16V, VGS = 0V,
f = 1.0MHz
VGS = 4.5V, VDS = 10V,
ID = 250mA
VDD = 10V, VGS = 4.5V,
RL = 47Ω, RG = 10Ω
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-20
-
-
-100
±2.0
V
nA
μA
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±4.5V, VDS = 0V
VGS(th)
-0.5
RDS (ON)
-
|Yfs|
VSD
-
-1.0
0.75
1.05
1.5
-1.2
V
Static Drain-Source On-Resistance
0.5
0.7
1.0
0.9
-0.8
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -430mA
VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
VDS = -10V, ID = -250mA
VGS = 0V, IS = -150mA
Ciss
Coss
Crss
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
59.76
12.07
6.36
622.4
100.3
132.2
5.1
8.1
28.4
20.7
-
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS (Note 5)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Ω
S
V
pF
pF
pF
pC
pC
pC
ns
ns
ns
ns
Test Condition
VDS = -16V, VGS = 0V,
f = 1.0MHz
VGS = -4.5V, VDS = -10V,
ID = -250mA
VDD = -10V, VGS = -4.5V,
RL = 47Ω, RG = 10Ω
4. Short duration pulse test used to minimize self-heating effect.
5. Guaranteed by design. Not subject to production testing.
DMG1016UDW
Document number: DS31860 Rev. 3 - 2
2 of 8
www.diodes.com
October 2009
© Diodes Incorporated
DMG1016UDW
N-CHANNEL – Q1
1.0
1.0
VGS = 8.0V
VGS = 4.5V
0.8
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 3.0V
0.6
VGS = 2.5V
VGS = 2.0V
0.4
VGS = 1.5V
0.6
0.4
T A = 150°C
0.2
0.2
TA = 125°C
VGS = 1.2V
TA = -55°C
0
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
5
0.8
0.7
0.6
0.5
0.4
VGS = 1.8V
0.3
VGS = 2.5V
VGS = 4.5V
0.2
0.1
0
0
T A = 85°C
TA = 25°C
0.2
0.4
0.6
0.8
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0
0.5
1
1.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
2
0.5
TA = 150°C
0.4
T A = 125°C
TA = 85°C
0.3
T A = 25°C
0.2
TA = -55°C
0.1
0
0
1.0
1.7
0.2
0.4
0.6
0.8
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
1.0
0.8
1.5
RDSON, DRAIN-SOURCE
ON-RESISTANCE (Ω)
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
0.8
1.3
1.1
0.9
VGS = 4.5V
ID = 500mA
0.6
VGS = 2.5V
ID = 250mA
0.4
VGS = 4.5V
ID = 500mA
0.2
VGS = 2.5V
ID = 250mA
0.7
0.5
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMG1016UDW
Document number: DS31860 Rev. 3 - 2
3 of 8
www.diodes.com
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
October 2009
© Diodes Incorporated
DMG1016UDW
N-CHANNEL – Q1 (continued)
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.0
1.2
0.8
ID = 1mA
ID = 250µA
0.4
0.8
TA = 25°C
0.6
0.4
0.2
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
100
0
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
1,000
TA = 150°C
10
IDSS, LEAKAGE CURRENT (nA)
Ciss
C, CAPACITANCE (pF)
Coss
C rss
100
TA = 125°C
T A = 85°C
10
TA = 25°C
1
1
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
0
0
20
4
8
12
16
VDS, DRAIN-SOURCE VOLTAGE (V)
20
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
1.6
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 260°C/W
D = 0.02
0.01
P(pk)
D = 0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
DMG1016UDW
Document number: DS31860 Rev. 3 - 2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
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100
1,000
October 2009
© Diodes Incorporated
DMG1016UDW
P-CHANNEL – Q2
1.0
1.0
VGS = -8.0V
VGS = -4.5V
VDS = -5V
-ID, DRAIN CURRENT (A)
VGS = -3.0V
0.6
VGS = -2.5V
VGS = -2.0V
0.4
0.2
0.8
0.6
0.4
T A = 150°C
0.2
VGS = -1.5V
TA = 125°C
TA = 85°C
T A = 25°C
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Output Characteristic
0
5
1.6
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0
1.4
1.2
VGS = -1.8V
1.0
0.8
VGS = -2.5V
0.6
0.4
VGS = -4.5V
0.2
0
0
0.2
0.4
0.6
0.8
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 14 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.0
RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω)
1.7
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
0.8
1.5
1.3
1.1
0.9
VGS = -4.5V
ID = -500mA
VGS = -2.5V
ID = -250mA
0.7
0.5
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 16 On-Resistance Variation with Temperature
DMG1016UDW
Document number: DS31860 Rev. 3 - 2
5 of 8
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TA = -55°C
0
0.5
1.0
1.5
2.0
2.5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 13 Typical Transfer Characteristic
3.0
1.0
VGS = -4.5V
0.8
TA = 150°C
TA = 125°C
0.6
T A = 85°C
TA = 25°C
0.4
TA = -55°C
0.2
0
0
0.2
0.4
0.6
0.8
-ID, DRAIN CURRENT (A)
Fig. 15 Typical On-Resistance
vs. Drain Current and Temperature
1.0
1.0
0.8
VGS = -2.5V
ID = -250mA
0.6
VGS = -4.5V
ID = -500mA
0.4
0.2
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 17 On-Resistance Variation with Temperature
October 2009
© Diodes Incorporated
DMG1016UDW
P-CHANNEL – Q2 (continued)
1.0
-IS, SOURCE CURRENT (A)
-VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.2
ID = -1mA
0.8
ID = -250µA
0.4
0.8
TA = 25°C
0.6
0.4
0.2
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 18 Gate Threshold Variation vs. Ambient Temperature
0
0.2
100
0.4
0.6
0.8
1.0
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 19 Diode Forward Voltage vs. Current
1,000
T A = 150°C
-IDSS, LEAKAGE CURRENT (nA)
Ciss
C, CAPACITANCE (pF)
Coss
10
Crss
TA = 125°C
100
10
TA = 85°C
T A = 25°C
1
1
0
5
10
15
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 20 Typical Total Capacitance
0
20
4
8
12
16
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 21 Typical Leakage Current
vs. Drain-Source Voltage
20
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
1.6
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
R θJA = 260°C/W
D = 0.02
P(pk)
0.01
D = 0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t 1/t2
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
DMG1016UDW
Document number: DS31860 Rev. 3 - 2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 22 Transient Thermal Response
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100
1,000
October 2009
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DMG1016UDW
Ordering Information
(Note 6)
Part Number
DMG1016UDW-7
Packaging
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
CA1
Date Code Key
Year
Code
2009
W
Month
Code
2010
X
Jan
1
Feb
2
Mar
3
YM
NEW PRODUCT
Notes:
Case
SOT-363
CA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
2011
Y
Apr
4
May
5
2012
Z
Jun
6
2013
A
Jul
7
Aug
8
2014
B
Sep
9
Oct
O
2015
C
Nov
N
Dec
D
Package Outline Dimensions
A
B C
H
K
M
J
D
L
F
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Typ
F
0.40
0.45
H
1.80
2.20
J
0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.22
0°
8°
α
All Dimensions in mm
Suggested Pad Layout
C2
Z
C2
C1
G
Y
Dimensions Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C1
1.9
C2
0.65
X
DMG1016UDW
Document number: DS31860 Rev. 3 - 2
7 of 8
www.diodes.com
October 2009
© Diodes Incorporated
DMG1016UDW
IMPORTANT NOTICE
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
DMG1016UDW
Document number: DS31860 Rev. 3 - 2
8 of 8
www.diodes.com
October 2009
© Diodes Incorporated
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