BDW42* − NPN, BDW46, BDW47* − PNP Preferred Device Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. http://onsemi.com 15 A DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 V, 85 W Features • Pb−Free Package is Available** • High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc: • • • VCEO(sus) = 80 Vdc (min) − BDW46 100 Vdc (min.) − BDW42/BDW47 Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc Monolithic Construction with Built−In Base Emitter Shunt resistors TO−220AB Compact Package MARKING DIAGRAM 4 TO−220AB CASE 221A STYLE 1 BDWxx YYWW MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol VCEO BDW46 BDW42, BDW47 Collector-Base Voltage Unit Vdc VCB Vdc IC 15 Adc Base Current IB 0.5 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 85 0.68 W W/°C −55 to +150 °C TJ, Tstg Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case 3 xx = 42, 46 or 47 YY = Year WW = Work Week 80 100 5.0 Operating and Storage Junction Temperature Range 2 Vdc VEB Collector Current 1 80 100 BDW46 BDW42, BDW47 Emitter-Base Voltage Value Symbol Max Unit RJC 1.47 °C/W ORDERING INFORMATION Package Shipping† BDW42 TO−220AB 50 Units/Rail BDW46 TO−220AB 50 Units/Rail BDW47 TO−220AB 50 Units/Rail BDW47G TO−220AB (Pb−Free) 50 Units/Rail Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Preferred devices are ON Semiconductor recommended choices for future use and best overall value **For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2004 June, 2004 − Rev. 11 Publication Order Number: BDW42/D BDW42* − NPN, BDW46, BDW47* − PNP ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 80 100 − − − − 2.0 2.0 − − 1.0 1.0 − 2.0 1000 250 − − − − 2.0 3.0 − 3.0 Unit OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) VCEO(sus) BDW46 BDW42/BDW47 Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) BDW46 BDW42/BDW47 Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) BDW46 BDW42/BDW47 Vdc ICEO mAdc ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 5.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 10 mAdc) (IC = 10 Adc, IB = 50 mAdc) VCE(sat) Base−Emitter On Voltage (IC = 10 Adc, VCE = 4.0 Vdc) VBE(on) Vdc Vdc SECOND BREAKDOWN (Note 2) Second Breakdown Collector Current with Base Forward Biased BDW42 IS/b VCE = 28.4 Vdc VCE = 40 Vdc VCE = 22.5 Vdc VCE = 36 Vdc BDW46/BDW47 Adc 3.0 1.2 3.8 1.2 − − − − 4.0 − − − 200 300 300 − DYNAMIC CHARACTERISTICS Magnitude of common emitter small signal short circuit current transfer ratio (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) fT Cob BDW42 BDW46/BDW47 Small−Signal Current Gain (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) hfe 1. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. 2. Pulse Test non repetitive: Pulse Width = 250 ms. PD, POWER DISSIPATION (WATTS) 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 1. Power Temperature Derating Curve http://onsemi.com 2 MHz pF BDW42* − NPN, BDW46, BDW47* − PNP 5.0 2.0 RC SCOPE APPROX + 8.0 V 0 51 V1 D1 8.0 k 150 25 µs 0.7 0.5 0.3 0.2 for td and tr, D1 id disconnected and V2 = 0 For NPN test circuit reverse all polarities − 12 V tr, tf 10 ns DUTY CYCLE = 1.0% tf 1.0 + 4.0 V APPROX ts 3.0 t, TIME (s) µ RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA TUT RB V2 VCC − 30 V 0.1 0.07 0.05 0.1 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 0.2 r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.01 0.01 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 3. Switching Times 0.1 P(pk) 0.05 RθJC(t) = r(t) RθJC RθJC = 1.92°C/W 0.02 t1 0.03 0.02 0.3 IC, COLLECTOR CURRENT (AMP) Figure 2. Switching Times Test Circuit 1.0 0.7 0.5 td @ VBE(off) = 0 V 0.01 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) Figure 4. Thermal Response http://onsemi.com 3 20 30 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RθJC(t) 50 100 200 300 500 1000 BDW42* − NPN, BDW46, BDW47* − PNP ACTIVE−REGION SAFE OPERATING AREA 50 0.1 ms 20 10 TJ = 25°C 1.0 ms 5.0 SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITED @ TC = 25°C (SINGLE PULSE) 2.0 1.0 0.5 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 50 0.5 ms dc 0.2 0.1 0.05 1.0 0.1 ms 20 10 TJ = 25°C SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITED @ TC = 25°C (SINGLE PULSE) 2.0 1.0 0.5 BDW42 20 30 2.0 3.0 5.0 7.0 10 50 70 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 6. BDW46 and BDW47 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 and 6 is based on TJ(pk) = 200C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 200C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. *Linear extrapolation 10,000 300 TJ = + 25°C 5000 3000 2000 200 C, CAPACITANCE (pF) hFE, SMALL−SIGNAL CURRENT GAIN dc BDW46 BDW47 0.05 1.0 2.0 3.0 5.0 7.0 10 50 70 100 20 30 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 0.5 ms 0.2 0.1 Figure 5. BDW42 1000 500 300 200 100 TJ = 25°C VCE = 3.0 V IC = 3.0 A 50 30 20 BDW46, 47 (PNP) BDW42 (NPN) 10 1.0 1.0 ms 5.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) Cob 100 Cib 70 50 200 30 0.1 500 1000 Figure 7. Small−Signal Current Gain BDW46, 47 (PNP) BDW42 (NPN) 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance http://onsemi.com 4 50 100 BDW42* − NPN, BDW46, BDW47* − PNP BDW42 (NPN) BDW46, 47 (PNP) 20,000 20,000 VCE = 3.0 V VCE = 3.0 V 10,000 5000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 10,000 TJ = 150°C 3000 2000 25°C 1000 −55 °C 500 300 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7000 5000 TJ = 150°C 3000 25°C 2000 1000 −55 °C 700 500 300 200 0.1 5.0 7.0 10 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 3.0 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 9. DC Current Gain TJ = 25°C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 3.0 TJ = 25°C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 1.0 20 30 Figure 10. Collector Saturation Region 3.0 3.0 TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) TJ = 25°C 2.0 VBE(sat) @ IC/IB = 250 1.5 2.5 2.0 1.5 VBE @ VCE = 4.0 V 1.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V 1.0 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 0.5 5.0 7.0 10 VCE(sat) @ IC/IB = 250 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) Figure 11. “On” Voltages http://onsemi.com 5 5.0 7.0 10 BDW42* − NPN, BDW46, BDW47* − PNP BDW46, 47 (PNP) +5.0 +4.0 *IC/IB 250 +3.0 25°C to 150°C +2.0 +1.0 −55 °C to 25°C 0 −1.0 *θVC for VCE(sat) −2.0 25°C to 150°C −3.0 θVB for VBE −55 °C to 25°C −4.0 −5.0 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENT (mV/ °C) BDW42 (NPN) 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 +5.0 +4.0 + 25°C to 150°C +2.0 +1.0 0 −1.0 *θVC for VCE(sat) −2.0 −55 °C to + 25°C θVB for VBE + 25°C to 150°C −3.0 −55 °C to +25°C −4.0 −5.0 7.0 10 *IC/IB 250 +3.0 0.1 0.5 0.2 0.3 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 12. Temperature Coefficients 104 105 FORWARD REVERSE IC, COLLECTOR CURRENT (A) µ IC, COLLECTOR CURRENT (A) µ 105 VCE = 30 V 103 102 101 TJ = 150°C 100°C 100 25°C 10− 1 +0.6 +0.4 +0.2 0 −0.2 −0.4 −0.6 −0.8 −1.0 REVERSE 104 FORWARD VCE = 30 V 103 102 TJ = 150°C 101 100 100°C 25°C 10− 1 −0.6 −0.4 −0.2 −1.2 −1.4 VBE, BASE−EMITTER VOLTAGE (VOLTS) 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 + 1.4 VBE, BASE−EMITTER VOLTAGE (VOLTS) Figure 13. Collector Cut−Off Region NPN BDW42 COLLECTOR PNP BDW46 BDW47 BASE COLLECTOR BASE 8.0 k 60 8.0 k EMITTER 60 EMITTER Figure 14. Darlington Schematic http://onsemi.com 6 BDW42* − NPN, BDW46, BDW47* − PNP PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AB B F −T− SEATING PLANE C 4 T S A Q 1 2 3 H K DIM A B C D F G H J K L N Q R S T U V Z U Z L V R G D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 1: PIN 1. 2. 3. 4. http://onsemi.com 7 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 BDW42* − NPN, BDW46, BDW47* − PNP ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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