Renesas FS10AS-06-T13 High-speed switching use nch power mos fet Datasheet

FS10AS-06
High-Speed Switching Use
Nch Power MOS FET
REJ03G0240-0100
Rev.1.00
Aug.20.2004
Features
•
•
•
•
•
Drive voltage : 10 V
VDSS : 60 V
rDS(ON) (max) : 78 mΩ
ID : 10 A
Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 55 ns
Outline
MP-3A
2, 4
4
1.
2.
3.
4.
1
12
3
Gate
Drain
Source
Drain
3
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Rev.1.00, Aug.20.2004, page 1 of 6
Symbol
VDSS
VGSS
Ratings
60
±20
Unit
V
V
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
10
40
10
10
40
30
– 55 to +150
– 55 to +150
0.32
A
A
A
A
A
W
°C
°C
g
Conditions
VGS = 0 V
VDS = 0 V
L = 100 µH
Typical value
FS10AS-06
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Rev.1.00, Aug.20.2004, page 2 of 6
Symbol
V(BR)DSS
IGSS
IDSS
VGS(th)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Rth(ch-c)
trr
Min.
60
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
3.0
58
0.29
9.0
600
180
60
18
22
30
17
1.0
—
55
Max.
—
±0.1
0.1
4.0
78
0.39
—
—
—
—
—
—
—
—
1.5
4.17
—
Unit
V
µA
mA
V
mΩ
mV
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Test conditions
ID = 1 mA, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
ID = 1 mA, VDS = 10 V
ID = 5 A, VGS = 10 V
ID = 5 A, VGS = 10 V
ID = 5 A, VDS = 5 V
VDS = 10 V, VGS = 0 V,
f = 1MHz
VDD = 30 V, ID = 5 A,
VGS = 10 V,
RGEN = RGS = 50 Ω
IS = 5 A, VGS = 0 V
Channel to case
IS = 10 A, dis/dt = –100 A/µs
FS10AS-06
Performance Curves
5
3
2
50
Drain Current ID (A)
40
30
20
10
0
DRAIN CURRENT ID (A)
20
50
150
100
tw = 10µs
101
7
5
3
2
100µs
1ms
100
7
5
3
2
10ms
DC
10–1 Tc = 25°C
7 Single Pulse
5
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2
200
Case Temperature Tc (°C)
Drain-Source Voltage VDS (V)
Output Characteristics (Typical)
Output Characteristics (Typical)
10
VGS = 20V
7V
10V
16
8V
VGS = 20V
8V
PD = 30W
6V
12
8
5V
4
Drain Current ID (A)
0
0
0.4
0.8
1.2
10V
6
5V
4
2
Tc = 25°C
Pulse Test
0.2
0.4
0.6
0.8
Drain-Source Voltage VDS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
On-State Resistance vs.
Drain Current (Typical)
Tc = 25°C
Pulse Test
1.6
1.2
ID = 15A
0.8
10A
0.4
5A
0
0
Drain-Source Voltage VDS (V)
2.0
0
0
2.0
1.6
6V
8
Tc = 25°C
Pulse Test
0
Drain-Source On-State Voltage VDS(ON) (V)
Maximum Safe Operating Area
4
8
12
16
Gate-Source Voltage VGS (V)
Rev.1.00, Aug.20.2004, page 3 of 6
20
Drain-Source On-State Resistance rDS(ON) (mΩ)
Drain Power Dissipation PD (W)
Drain Power Dissipation Derating Curve
1.0
100
Tc = 25°C
Pulse Test
80
60
40
VGS = 10V
20V
20
0
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
Drain Current ID (A)
FS10AS-06
Forward Transfer Admittance vs.
Drain Current (Typical)
32
24
16
8
0
Capacitance (pF)
Tc = 25°C
VDS = 10V
Pulse Test
0
4
8
12
20
VDS = 5V
Pulse Test
2
Tc = 25°C
101
7
5
4
3
75°C
125°C
2
100
100
Switching Characteristics (Typical)
Tch = 25°C
f = 1MHz
VGS = 0V
Ciss
Coss
102
7
5
3
2
Crss
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3
102
7
5
4
3
tf
td(off)
tr
td(on)
2
101
7
5
4
3 Tch = 25°C
2 VDD = 30V
VGS = 10V
RGEN = RGS = 50Ω
100
100
2 3 4 5 7 101
2 3 4 5 7 102
Drain-Source Voltage VDS (V)
Drain Current ID (A)
Gate-Source Voltage vs.
Gate Charge (Typical)
Source-Drain Diode Forward
Characteristics (Typical)
40
VGS = 0V
Pulse Test
16
12
VDS = 10V
8
20V
40V
4
4
8
12
16
Gate Charge Qg (nC)
Rev.1.00, Aug.20.2004, page 4 of 6
20
Source Current IS (A)
Tch = 25°C
ID = 10A
0
2 3 4 5 7 102
Capacitance vs.
Drain-Source Voltage (Typical)
103
7
5
3
2
0
2 3 4 5 7 101
Drain Current ID (A)
20
Gate-Source Voltage VGS (V)
102
7
5
4
3
Gate-Source Voltage VGS (V)
104
7
5
3
2
101
16
Switching Time (ns)
Drain Current ID (A)
40
Forward Transfer Admittance | yfs | (S)
Transfer Characteristics (Typical)
32
24
Tc = 125°C
75°C
16
25°C
8
0
0
0.4
0.8
1.2
1.6
Source-Drain Voltage VSD (V)
2.0
Gate-Source Threshold Voltage VGS(th) (V)
On-State Resistance vs.
Channel Temperature (Typical)
101
7 VGS = 10V
ID = 1/2 ID
5 Pulse Test
4
3
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
5.0
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
–50
0
50
100
150
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
Transient Thermal Impedance Characteristics
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
Threshold Voltage vs.
Channel Temperature (Typical)
Channel Temperature Tch (°C)
–50
0
50
100
150
Transient Thermal Impedance Zth(ch–c) (°C/W)
Drain-Source On-State Resistance rDS(ON) (25°C)
Drain-Source Breakdown Voltage V(BR)DSS (25°C)
Drain-Source Breakdown Voltage V(BR)DSS (t°C)
Drain-Source On-State Resistance rDS(ON) (t°C)
FS10AS-06
102
7
5
3
2
101
7
5 D = 1.0
3 0.5
2
0.2
100
7
5
3
2
PDM
0.1
0.05
0.02
0.01
Single Pulse
tw
T
tw
D=
T
10–1
10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
Channel Temperature Tch (°C)
Pulse Width tw (s)
Switching Time Measurement Circuit
Switching Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RGEN
RL
Vin
Vout
RGS
10%
10%
10%
VDD
90%
td(on)
Rev.1.00, Aug.20.2004, page 5 of 6
tr
90%
td(off)
tf
FS10AS-06
Package Dimensions
MP-3A
Cu alloy
2.3
0.5 ± 0.1
1 max
2.5 min
6.1 ± 0.2
5.3 ± 0.2
0.76 ± 0.2
Lead Material
0.32
1 ± 0.2
6.6
Mass (g) (reference value)
0.76
0.1 ± 0.1
1.4 ± 0.2
JEDEC Code

10.4 max
EIAJ Package Code

0.5 ± 0.2
2.3±0.2
Dimension in Millimeters
Min
Typ
Max
A
A1
A2
b
D
E
e
x
y
y1
ZD
ZE
1
2.3
Symbol
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form
Standard packing
Quantity
Standard order code
Surface-mounted type Taping
3000 Type name – T +Direction (1 or 2) +3
Surface-mounted type Plastic Magazine (Tube)
75 Type name
Note : Please confirm the specification about the shipping in detail.
Rev.1.00, Aug.20.2004, page 6 of 6
Standard order
code example
FS10AS-06-T13
FS10AS-06
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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