Sanyo ECH8651R General-purpose switching device application Datasheet

ECH8651R
Ordering number : ENA1010A
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ECH8651R
General-Purpose Switching Device
Applications
Features
•
•
•
•
Low ON-resistance
2.5V drive
Common-drain type
Protection diode in
•
•
•
Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
Unit
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
24
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
V
±12
V
10
A
PW≤10μs, duty cycle≤1%
60
A
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
1.4
W
Total Dissipation
PD
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
When mounted on ceramic substrate (900mm2×0.8mm)
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-003
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ECH8651R-TL-H
Top View
0.25
2.9
Packing Type : TL
Marking
0.15
8
5
WV
2.3
4
1
0.65
0.9
0.25
Lot No.
TL
Electrical Connection
0.3
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
0.07
2.8
0 to 0.02
Bottom View
8
7
6
5
1
2
3
4
SANYO : ECH8
http://semicon.sanyo.com/en/network
50912 TKIM/40908PE TIIM TC-00001313 No. A1010-1/7
ECH8651R
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Conditions
Ratings
min
typ
Unit
max
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=20V, VGS=0V
24
V
IGSS
VGS(off)
| yfs |
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
0.5
VDS=10V, ID=5A
5.5
9.5
RDS(on)1
ID=5A, VGS=4.5V
7
10.5
14
mΩ
RDS(on)2
ID=5A, VGS=4.0V
7.2
11
15
mΩ
RDS(on)3
ID=5A, VGS=3.1V
7.5
12.5
17.5
mΩ
RDS(on)4
ID=2.5A, VGS=2.5V
9
15
21
mΩ
1
μA
±10
μA
1.3
V
S
Turn-ON Delay Time
td(on)
300
ns
Rise Time
1000
ns
Turn-OFF Delay Time
tr
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
See specified Test Circuit.
VDS=10V, VGS=10V, ID=10A
4000
ns
2500
ns
24
nC
2
nC
4.5
IS=10A, VGS=0V
0.77
nC
1.2
V
Switching Time Test Circuit
4.5V
0V
VDD=10V
VIN
ID=5A
RL=2Ω
VIN
D
PW=10μs
D.C.≤1%
Rg
G
P.G
VOUT
50Ω
S
ECH8651R
Rg=1kΩ
Ordering Information
Device
ECH8651R-TL-H
Package
Shipping
memo
ECH8
3,000pcs./reel
Pb Free and Halogen Free
No. A1010-2/7
ECH8651R
ID -- VDS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
4V
1.5V
7
4.5V
Drain Current, ID -- A
8
2.5
3.1V
9
6
5
4
3
2
1
VGS=1V
0
0
0.1
0.2
0.3
0.4
V GS=
5
0
--50
0
50
100
150
6
8
VDS=10V
7
C
5°
5
=
Ta
--2
75
25
3
°C
°C
2
2
3
5
7
2
1.0
3
5°C
25°
C
--25
°C
0.1
7
5
3
2
0.01
7
5
3
2
0.2
0.3
0.4
0.5
0.6
0.7
0.8
VDD=10V
VGS=4V
tf
2
tr
1000
7
5
td(on)
3
2
2
Drain Current, ID -- A
2.5
2.0
1.5
1.0
0.5
0
20
Total Gate Charge, Qg -- nC
25
30
IT13296
3
5
7
2
1.0
3
5
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
7
10
IT13295
ASO
2
3.0
15
3
Drain Current, ID -- A
3.5
10
5
td (off)
IT13152
VDS=10V
ID=10A
7
10
IT13151
SW Time -- ID
100
0.1
0.9
VGS -- Qg
4.5
5
Drain Current, ID -- A
Switching Time, SW Time -- ns
1.0
7
5
3
2
10
IT13149
| yfs | -- ID
7
Ta=
7
Source Current, IS -- A
4
1000
Diode Forward Voltage, VSD -- V
Gate-to-Source Voltage, VGS -- V
2
IT13150
VGS=0V
5
5
1.0
0.1
IS -- VSD
0
10
Gate-to-Source Voltage, VGS -- V
200
Ambient Temperature, Ta -- °C
4.0
5.0A
15
0
Forward Transfer Admittance, | yfs | -- S
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
10
ID=2.5A
20
10
A
=2.5
, ID
V
5
.
=2
=5A
, ID
VGS
V
1
.
=3
5A
VGS
, I D=
4.5V
=
VGS
5A
=
I
4.0V, D
15
25
IT13148
25
20
30
0
RDS(on) -- Ta
30
0.001
0.1
Ta=25°C
35
0.5
Drain-to-Source Voltage, VDS -- V
10
7
5
3
2
RDS(on) -- VGS
40
V
10
IDP=60A
ID=10A
10
DC
Operation in this
area is limited by RDS(on).
PW≤10μs
10
0μ
1m s
s
10
ms
0m
s
op
era
0.1
7 Ta=25°C
5 Single pulse
3
When mounted on ceramic substrate
2
(900mm2✕0.8mm) 1unit
0.01
2 3 5 7 1.0
2 3
0.01 2 3 5 7 0.1
tio
n
5 7 10
Drain-to-Source Voltage, VDS -- V
2 3
5
IT13390
No. A1010-3/7
ECH8651R
PD -- Ta
Allowable Power Dissipation, PD -- W
1.8
When mounted on ceramic substrate
(900mm2✕0.8mm)
1.6
1.5
1.4
1.2
To
t
al
1.0
ss
1u
0.8
Di
ni
t
ip
ati
on
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13154
No. A1010-4/7
ECH8651R
Embossed Taping Specification
ECH8651R-TL-H
No. A1010-5/7
ECH8651R
Outline Drawing
ECH8651R-TL-H
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.8
0.6
0.4
0.65
No. A1010-6/7
ECH8651R
Note on usage : Since the ECH8651R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of May, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1010-7/7
Similar pages