MACOM MAAP-000074-SMB001 Amplifier, power, 8w 2.0-8.0 ghz Datasheet

MAAP-000074-PED000
Amplifier, Power, 8W
2.0-8.0 GHz
Rev —
Preliminary Datasheet
Features
♦ 8 Watt Saturated Output Power Level
♦ Eutectically mounted to Heat Spreader
♦ Next level integration is a Silver Epoxy-Based Process
♦ Variable Drain Voltage (6-10V) Operation
♦ MSAG™ Process
Description
The MAAP-000074-PED000 is a 2-stage 8W power amplifier with on-chip bias networks, eutettically mounted on a 10-mil thick Copper Molybdenum (CuMo) pedestal. This product is fully matched to 50 ohms on both the input and output. It can be
used as a power amplifier stage or as a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly reliable
GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each device is 100% RF
tested at the die-on-pedestal assembly level to ensure performance compliance.
Primary Applications
M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes,
planar processing of ion implanted transistors, multiple implant capability enabling
power, low-noise, switch and digital FETs on a single chip, and polyimide scratch
protection for ease of use with automated manufacturing processes. The use of
refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging.
♦
♦
♦
♦
SatCom
Radio Communications
Radar
Electronic Warfare
Also Available in:
Description
Die
Part Number
MAAPGM0074-DIE
Ceramic Package
Sample Board (Die)
Sample Board (Pkg)
MAAP-000074-PKG001 MAAP-000074-SMB004 MAAP-000074-SMB001
Mechanical Sample (Die)
MAAP-000074-MCH000
Electrical Characteristics: T B = 30°C1, Z0 = 50 Ω, VDD = 10V, IDQ = 2.1A2, Pin = 28 dBm, RG=40 Ω
1.
2.
Parameter
Symbol
Typical
Units
Bandwidth
f
2.0-8.0
GHz
Output Power
POUT
39
dBm
1-dB Compression Point
P1dB
38
dBm
Small Signal Gain
G
14
dB
Input VSWR
VSWR
1.7:1
Output VSWR
VSWR
2.2:1
Gate Current
IGG
3.5
mA
Drain Current
IDD
3.5
A
2nd Harmonic, 2-4 GHz
2f
16.5
dBc
2nd Harmonic, 6-8 GHz
2f
72
dBc
TB = MMIC Base Temperature
Adjust VGG between –2.6 and –1.5V to achieve specified IDQ .
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MAAP-000074-PED000
Amplifier, Power, 8W
2.0-8.0 GHz
Rev —
Preliminary Datasheet
Maximum Ratings3
Parameter
Symbol
Absolute Maximum
Units
Input Power
PIN
33
dBm
Drain Supply Voltage
VDD
+12.0
V
Gate Supply Voltage
VGG
-3.0
V
Quiescent Drain Current (No RF)
IDQ
3.0
A
Quiescent DC Power Dissipated (No RF)
PDISS
33
W
Junction Temperature
TJ
170
°C
Storage Temperature
TSTG
-55 to +150
°C
3. Operation beyond these limits may result in permanent damage to the part.
Recommended Operating Conditions4
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Voltage
VDD
4.0
10
10
V
Gate Voltage
VGG
-2.6
-2.2
-1.5
V
Input Power
PIN
28
30
dBm
Thermal Resistance
ΘJC
4.3
MMIC Base Temperature
TB
°C/W
Note 5
°C
4. Operation outside of these ranges may reduce product reliability.
5. MMIC Base Temperature = 170°C — ΘJC* VDD * I DQ
Power Derating Curve, Quiescent (No RF)
40
Operating Instructions
1. Apply VGG = -2.7 V, VDD= 0 V.
2. Ramp VDD to desired voltage, typically 10.0 V.
3. Adjust VGG to set IDQ, (approximately @ –2.2 V).
4. Set RF input.
5. Power down sequence in reverse. Turn VGG off
last.
35
Peak Power Dissipation [Watts]
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
30
25
20
15
10
5
0
-40
-20
0
20
40
60
80
100
120
140
160
180
Maximum Allowable Base Temperature [°C]
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MAAP-000074-PED000
Amplifier, Power, 8W
2.0-8.0 GHz
Rev —
Preliminary Datasheet
50
45
43
45
43
41
40
41
39
35
39
37
30
37
35
25
33
20
31
15
31
29
10
29
5
27
0
25
Pout
PAE
27
25
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
P 1dB (dBm)
45
PAE (%)
35
33
9.0
6V
8V
10V
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Frequency (GHz)
6.0
6.5
7.0
7.5
8.0
8.5
9.0
Figure 2. 1dB Compression Point vs. Frequency by Drain Voltage at 25% IDSS
45
45
43
43
41
41
39
39
Psat (dBm)
Psat (dBm)
Figure 1. Output Power and Power Added Efficiency vs. Frequency at VD =10V,
P in=28dBm, and 25% IDSS
37
35
33
37
35
33
31
31
27
-20ºC
33ºC
93ºC
29
6V
8V
10V
29
27
25
25
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
2.0
9.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
Frequency (GHz)
Frequency (GHz)
Figure 4. Saturated Output Power vs. Frequency by Temperature at 10V and 25%
IDSS
Figure 3. Saturated Output Power vs. Frequency by Drain Voltage at 25% IDSS
42.00
22.00
18
40.00
20.00
16
38.00
18.00
36.00
16.00
5
14
4
VSWR
12
10
10V
Input VSW R
OutputVSWR
8
3
6
4
2
2
0
1
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
Frequency (GHz)
Figure 5. Small Signal Gain and Input and Output VSWR vs. Frequency by Drain
Voltage at 25% IDSS
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Output Power (dBm), PAE (%)
6
20
Gain (dB)
5.5
Frequency (GHz)
34.00
14.00
Pout
PAE
SSG
IDS
32.00
30.00
12.00
10.00
28.00
8.00
26.00
6.00
24.00
4.00
22.00
30
40
50
60
70
80
90
100
110
120
130
140
SSG (dB), Drain Current (A)
P out (dBm)
All Data is at 30ºC MMIC base temperature, CW stimulus, unless otherwise noted.
2.00
150
Junction Temperature (ºC)
Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and Drain
Current vs. Junction Temperature at 10 V, 5.5 GHz, and 25% IDSS
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MAAP-000074-PED000
Amplifier, Power, 8W
2.0-8.0 GHz
Rev —
Preliminary Datasheet
All Data is at 30ºC MMIC base temperature, CW stimulus, unless otherwise noted.
45
20.0
43
18.0
41
39
16.0
14.0
35
33
Gain (dB)
Output Power (dBm)
37
31
29
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
7 GHz
8 GHz
27
25
23
21
19
12.0
10.0
8.0
6.0
3 GHz
5.5 GHz
8 GHz
4.0
2.0
17
0.0
15
6
8
10
12
14
16
18
20
22
24
26
28
15
30
17
19
21
23
25
Figure 7. Output Power vs. Input Power by Frequency at 10V and 25% IDSS
29
31
33
35
37
39
41
43
Figure 8. Gain vs. Output Power by Frequency at 10V and 25% IDSS
5.0
30
28
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
7 GHz
8 GHz
24
22
20
18
4.5
4.0
3.5
Drain Current (A)
26
PAE (%)
27
Output Power (dBm)
Input Power (dBm)
16
14
12
10
3.0
2.5
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
7 GHz
8 GHz
2.0
1.5
8
6
1.0
4
0.5
2
0
6
8
10
12
14
16
18
20
22
24
26
28
0.0
30
6
8
10
12
14
16
Input Power (dBm)
18
20
22
24
26
28
30
Input Power (dBm)
Figure 9. Power Added Efficiency vs. Input Power by Frequency at 10V and
25% IDSS
Figure 10. Drain Current vs. Input Power by Frequency at 10V and 25% IDSS
20.0
45
43
18.0
41
16.0
39
14.0
35
33
Gain (dB)
Output Power (dBm)
37
31
29
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
7 GHz
8 GHz
27
25
23
21
19
12.0
10.0
8.0
6.0
3 GHz
5.5 GHz
8 GHz
4.0
2.0
17
0.0
15
6
8
10
12
14
16
18
20
22
24
26
28
30
Input Power (dBm)
Figure 11. Output Power vs. Input Power by Frequency at 8V and 25% IDSS
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
Output Power (dBm)
Figure 12. Gain vs. Output Power by Frequency at 8V and 25% IDSS
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MAAP-000074-PED000
Amplifier, Power, 8W
2.0-8.0 GHz
Rev —
Preliminary Datasheet
All Data is at 30ºC MMIC base temperature, CW stimulus, unless otherwise noted.
5.0
30
28
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
7 GHz
8 GHz
24
22
PAE (%)
20
18
4.5
4.0
3.5
Drain Current (A)
26
16
14
12
10
3.0
2.5
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
7 GHz
8 GHz
2.0
1.5
8
6
1.0
4
0.5
2
0
6
8
10
12
14
16
18
20
22
24
26
28
30
0.0
6
Input Power (dBm)
8
10
12
14
16
18
20
22
24
26
28
30
Input Power (dBm)
Figure 13. Power Added Efficiency vs. Input Power by Frequency at 8V and
25% IDSS
Figure 14. Drain Current vs. Input Power by Frequency at 8V and 25% IDSS
100
90
70
60
50
6 dBm
10 dBm
14 dBm
18 dBm
22 dBm
26 dBm
30 dBm
40
2
nd
Harmonic (dBc)
80
30
20
10
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
Frequency (GHz)
Figure 15. Second Harmonic vs. Frequency by Input Power at 10V and 25% IDSS
Figure 16. Fixture used to characterize MAAPGM0074-DIE
under CW stimulus.
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MAAP-000074-PED000
Amplifier, Power, 8W
2.0-8.0 GHz
Rev —
Preliminary Datasheet
Mechanical Information
Chip Size: 5.204 x 6.550 x 0.356 mm
(204
x 258 x 14 mils)
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Figure 17. Die Layout
Bond Pad Dimensions
Pad
Pad No.
Size (μm)
Size (mils)
RF In and Out
1
100 x 200
4x8
DC Drain Supply Voltage VD1
2
200 x 150
8x6
DC Drain Supply Voltage VD2
3
500 x 200
20 x 8
DC Gate Supply Voltage VG1
4
150 x 150
6x6
DC Gate Supply Voltage VG2
5
150 x 125
6x5
6
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MAAP-000074-PED000
Amplifier, Power, 8W
2.0-8.0 GHz
Rev —
Preliminary Datasheet
Recommended Layout and Wire Bonding Configuration
GND
In implementing the DC/ RF crossover shown, the following rules must applied.
1.
2.
3.
4.
the DC crossovers should approach and cross the RF trace at a 90 degree angle;
the printed DC traces that approach the RF line should be stopped 2 substrate heights from the RF line edge;
the rated current capability of the DC crossovers should be greater than the maximum current of the device; and
the wires or ribbons used to make the DC crossovers should clear the RF trace by ~ 1 substrate height.
Power Supply Sequencing:
Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier.
Die Handling:
Refer to Application Note AN3016. All Application Notes may be accessed by going to http://www.macom.com/
Application%20Notes/index.htm.
7
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 8W
2.0-8.0 GHz
MAAP-000074-PED000
Rev —
Preliminary Datasheet
Next Level Assembly Instructions:
Pedestal Die Attach: The following paragraphs detail recommendations and instructions for the integration of the die
on pedestal (IC assembly) and mating substrates to the next level assembly. These recommendations are summarized pictorially in Figure 18.
To attach the die/pedestal assembly to the next level assembly, use a high thermal conductivity silver loaded epoxy.
Two epoxies are recommended for this purpose, Diemat (www.diemat.com) PNs DM6030HK and DM4030LD with
bulk thermal conductivities of 60 and 15 W/m-ºC, respectively. Silver-filled epoxies with conductivities < 10 W/m-ºC
are not recommended for use in attaching these IC assemblies.
DM6030HK is recommended for use when the coefficient of thermal expansion (CTE) of the material to which the IC
assembly is to be attached is similar to that of CuMo (CTE ~ 7ppm). A next level assembly attach material with a CTE
range of 4-10ppm would be acceptable. DM4030LD is recommended when the CTE of the next level assembly material is significantly greater than CuMo, e.g, Copper and Aluminum with CTEs of 14 and 23 ppm, respectively.
Bondline thickness, the as-cured thickness of the silver epoxy layer between the IC assembly and next level assembly
attach surface, is a critical parameter in terms of device performance and reliability. Bondline thickness should be
maintained between 1 and 1.5 mils. A bondline thickness of < 1 mil reduces the sheer strength of the mechanical attach. Bondline thicknesses > 1.5 mils impacts in an incremental fashion the junction temperature of the IC and
thereby the MTTF.
The pedestal thickness used in the IC assembly is set at 10 mils such that the final IC assembly thickness is ~ 14 mils
making it approximately planar with a mating substrate of 15 mil alumina, a thickness commonly used through X-band.
This surface planarity was an objective because it results in shorter RF bond wire lengths between the IC assembly
RF I/O and the mating substrate transmission line. Long bond wires can shift the load impedance required for ideal
power transfer. Shorter RF bond wires result in improved RF performance.
In any nominal microelectronic manufacturing environment, the process of silver epoxy attach of substrates and IC
assemblies to the next level assembly can result in variable epoxy squeeze-out or run-out at the substrate or IC assembly peripheries. This variability, if not compensated for in the design of the overall assembly, can result in a high
number of assembly failures due to epoxy wicking. This wicking process can occur when a mating substrate and IC
assembly are placed too close to each other. To avoid this occurrence, a designed-in 5-10 mil spacing between the IC
assembly and mating substrates is recommended.
8
Wirebonding: Bond @ 160°C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although
ball bonds are also acceptable.
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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