MJD148 NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • High Gain − 50 Min @ IC = 2.0 A • Low Saturation Voltage − 0.5 V @ IC = 2.0 A • High Current Gain − Bandwidth Product − fT = 3.0 MHz Min @ IC = 250 mAdc • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; >8000 V Machine Model, C; >400 V ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ http://onsemi.com 4.0 Amps 45 Volts 20 Watts POWER TRANSISTOR MARKING DIAGRAM MAXIMUM RATINGS Rating Collector−Emitter Voltage Symbol Value Unit VCEO 45 Vdc Collector−Base Voltage VCB 45 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous Peak IC 4.0 7.0 Adc Base Current IB 50 mAdc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 20 0.16 W W/°C Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD 1.75 0.014 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to + 150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RJC 6.25 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RJA 71.4 °C/W 4 DPAK CASE 369C STYLE 1 1 2 3 J148 Y WW YWW J148 = Device Code = Year = Work Week ORDERING INFORMATION Device MJD148T4 Package Shipping† DPAK 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. Semiconductor Components Industries, LLC, 2004 June, 2004 − Rev. 2 1 Publication Order Number: MJD148/D MJD148 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Test Conditions Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) IC = 100 mAdc, IB = 0 VCEO(sus) 45 − Vdc Collector Cutoff Current VCB = 45 Vdc, IE = 0 ICBO − 20 Adc Emitter Cutoff Current VBE = 5 Vdc, IC = 0 IEBO − 1 mAdc DC Current Gain (Note 2) IC = 10 mAdc, VCE = 5 Vdc IC = 0.5 Adc, VCE = 1 Vdc IC = 2 Adc, VCE = 1 Vdc IC = 3 Adc, VCE = 1 Vdc hFE 40 85 50 30 − 375 − − − Collector−Emitter Saturation Voltage (Note 2) IC = 2 Adc, IB = 0.2 Adc VCE(sat) − 0.5 Vdc Base−Emitter On Voltage (Note 2) IC = 2 Adc, VCE = 1 Vdc VBE(on) − 1.1 Vdc fT 3 − MHz ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Current−Gain−Bandwidth Product IC = 250 mAdc, VCE = 1 Vdc, f = 1 MHz 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. http://onsemi.com 2 MJD148 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL CHARACTERISTICS 10 TJ = 150°C VCE = 2 V VCE = 10 V 5 3 2 1 = 25°C 0.5 −55°C 0.3 0.2 0.1 0.004 0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 IC, COLLECTOR CURRENT (A) 0.5 1 2 3 4 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. DC Current Gain 2 TJ = 25°C 1.6 1.2 IC = 10 mA 100 mA 1A 3A 0.8 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IB, BASE CURRENT (mA) 20 Figure 2. Collector Saturation Region http://onsemi.com 3 30 50 70 100 200 300 500 MJD148 + 2.5 y, TEMPERATURE COEFFICIENTS (mV/°C) 2 TJ = 25°C VOLTAGE (V) 1.6 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2 V 0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.020.030.05 0.1 0.20.3 0.5 1 IC, COLLECTOR CURRENT (A) 2 34 *APPLIES FOR IC/IB ≤ hFE/2 *TJ = − 65°C to + 150°C +2 + 1.5 +1 + 0.5 *V for VCE(sat) 0 −0.5 −1 −1.5 V for VBE −2 −2.5 0.005 0.01 0.020.030.05 0.1 0.20.3 0.5 1 IC, COLLECTOR CURRENT (A) Figure 3. “On” Voltages 2 3 4 500 1k Figure 4. Temperature Coefficients 103 IC, COLLECTOR CURRENT (mA) VCE = 30 V 102 101 100 10−1 10−2 TJ = 150°C 100°C REVERSE FORWARD 25°C 10−3 −0.4 −0.3 −0.2 −0.1 ICES 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 VBE, BASE−EMITTER VOLTAGE (V) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 5. Collector Cut−Off Region 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 P(pk) ZJC(t) = r(t) RqJC RqJC = 6.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) − TC = P(pk) ZqJC(t) DUTY CYCLE, D = t1/t2 0.1 0.05 0.1 0.07 0.05 0.01 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 t, TIME (ms) 10 Figure 6. Thermal Response http://onsemi.com 4 20 50 100 200 MJD148 IC, COLLECTOR CURRENT (A) 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150°C. TJ(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. dc 1 5 ms 0.5 0.3 0.2 1 ms BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TC = 25°C SINGLE PULSE, D ≤ 0.1% TJ = 150°C 0.1 0.05 0.03 0.02 0.01 FORWARD BIAS SAFE OPERATING AREA INFORMATION 500 s 5 3 2 1 20 30 50 70 2 3 5 7 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 7. Maximum Rated Forward Bias http://onsemi.com 5 MJD148 PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE O −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 3 U K F J L H D G 2 PL 0.13 (0.005) M T DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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