Vishay BS250 P-channel 60-v (d-s) mosfet Datasheet

TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number
V(BR)DSS Min (V)
rDS(on) Max (W)
VGS(th) (V)
ID (A)
TP0610L
−60
10 @ VGS = −10 V
−1 to −2.4
−0.18
TP0610T
−60
10 @ VGS = −10 V
−1 to −2.4
−0.12
VP0610L
−60
10 @ VGS = −10 V
−1 to −3.5
−0.18
VP0610T
−60
10 @ VGS = −10 V
−1 to −3.5
−0.12
BS250
−45
14 @ VGS = −10 V
−1 to −3.5
−0.18
FEATURES
D
D
D
D
D
BENEFITS
High-Side Switching
Low On-Resistance: 8 W
Low Threshold: −1.9 V
Fast Switching Speed: 16 ns
Low Input Capacitance: 15 pF
Device Marking
Front View
TO-226AA
(TO-92)
S
1
G
2
D
3
TP0610L
VP0610L
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer
D
D
D
D
D
D Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories,
Transistors, etc.
D Battery Operated Systems
D Power Supply, Converter Circuits
D Motor Control
TO-92-18RM
(TO-18 Lead Form)
TP0610L
“S” TP
0610L
xxll
D
1
G
2
S
3
TO-236
(SOT-23)
Device Marking
Front View
BS250
VP0610L
“S” VP
0610L
xxll
Top View
APPLICATIONS
G
“S” BS
250
xxll
Top View
1
Marking Code:
3
S
2
“S” = Siliconix Logo
xxll = Date Code
D
TP0610T: TOwll
VP0610T: VOwll
w = Week Code
lL = Lot Traceability
Top View
TP0610T
VP0610T
BS250
“S” = Siliconix Logo
xxll = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TP0610L
TP0610T
VP0610L
VP0610T
BS250
Drain-Source Voltage
VDS
−60
−60
−60
−60
−45
Gate-Source Voltage
VGS
"30
"30
"30
"30
"25
−0.18
−0.12
−0.18
−0.12
−0.18
−0.11
−0.07
−0.11
−0.07
−0.8
−0.4
−0.8
−0.4
Continuous Drain Current
(TJ = 150_C)
TA= 25_C
TA= 100_C
Pulsed Drain Currenta
Power Dissipation
ID
IDM
TA= 25_C
TA= 100_C
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
PD
RthJA
TJ, Tstg
0.8
0.36
0.8
0.36
0.32
0.14
0.32
0.14
156
350
156
350
−55 to 150
Unit
V
A
0.83
150
W
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
For applications information see AN804.
Document Number: 70209
S-41260—Rev. H, 05-Jul-04
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1
TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
TP0610L/T
Parameter
Symbol
Test Conditions
Typa
Min
VGS = 0 V, ID = −10 mA
−70
−60
Max
VP0610L/T
Min
Max
BS250
Min
Max
Unit
Static
Drain Source
Drain-Source
Breakdown Voltage
Gate-Threshold
Voltage
Gate-Bodyy Leakage
g
V(BR)DSS
VGS(th)
IGSS
−60
−45
VGS = 0 V, ID = −100 mA
VDS = VGS, ID = −1 mA
−1.9
−1
−2.4
VDS = 0 V, VGS = "20 V
"10
VDS = 0 V, VGS = "20 V, TJ = 125_C
"50
−1
−3.5
IDSS
nA
"20
VDS = −48 V, VGS = 0 V
−1
−1
VDS = −48 V, VGS = 0 V, TJ = 125_C
−200
−200
VDS = −25 V, VGS = 0 V
ID(on)
VDS = −10
10 V,
V VGS = −10
10 V
−180
L Suffix
Forward
Transconductanceb
Diode Forward
Voltage
rDS(on)
DS( )
gfs
f
VSD
−50
−750
−600
T Suffix
VGS = −4.5 V, ID = −25 mA
Drain-Source
On-Resistanceb
mA
m
−0.5
VDS = −10 V, VGS = −4.5 V
On-State
O
S
Drain
Currentb
V
−3.5
"10
VDS = 0 V, VGS = "15 V
Zero G
Gate Voltage
Drain Current
−1
mA
−220
11
25
VGS = −10 V, ID = −0.5 A
L Suffix
8
10
10
VGS = −10 V, ID = −0.5 A, TJ = 125_C
L Suffix
15
20
20
VGS = −10 V, ID = −0.2 A
T Suffix
6.5
10
10
VDS = −10 V, ID = −0.5 A
L Suffix
20
80
VDS = −10 V, ID = −0.1 A
T Suffix
90
60
IS = −0.5 A, VGS = 0 V
W
14
mS
70
−1.1
V
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer
Capacitance
Crss
VDS = −25 V, VGS = 0 V
f = 1 MHz
15
60
60
10
25
25
3
5
5
pF
Switchingc
Turn-On Time
tON
Turn-Off Time
tOFF
VDD = −25
25 V, RL = 133 W
ID ^ −0.18 A, VGEN = −10 V, Rg = 25 W
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
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2
8
10
8
10
ns
VPDS06
Document Number: 70209
S-41260—Rev. H, 05-Jul-04
TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
1200
1.0
VGS = 10 V
TJ = −55_C
7V
8V
I D − Drain Current (mA)
I D − Drain Current (A)
0.8
6V
0.6
0.4
5V
0.2
900
25_C
125_C
600
300
4V
0.0
0
0
1
2
3
4
5
0
2
VDS − Drain-to-Source Voltage (V)
4
6
8
10
VGS − Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
40
20
16
32
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
VGS = 0 V
VGS = 4.5 V
12
VGS = 5 V
8
VGS = 10 V
4
Ciss
24
16
Coss
8
Crss
0
0
0
200
400
600
800
0
1000
5
ID − Drain Current (mA)
ID = 500 mA
6
3
0.3
0.6
0.9
1.2
Qg − Total Gate Charge (nC)
Document Number: 70209
S-41260—Rev. H, 05-Jul-04
25
On-Resistance vs. Junction Temperature
VGS = 10 V @ 500 mA
VDS = 48 V
9
0
0.0
20
1.5
VDS = 30 V
rDS(on) − On-Resiistance
(Normalized)
V GS − Gate-to-Source Voltage (V)
1.8
12
15
VDS − Drain-to-Source Voltage (V)
Gate Charge
15
10
1.5
1.8
1.2
VGS = 4.5 V @ 25 mA
0.9
0.6
0.3
0.0
−50
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
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TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-Source Voltage
10
1000
r DS(on) − On-Resistance ( W )
I S − Source Current (A)
VGS = 0 V
100
TJ = 125_C
10
TJ = 25_C
TJ = −55_C
8
ID = 500 mA
6
4
ID = 200 mA
2
0
1
0.00
0.3
0.6
0.9
1.2
0
1.5
VSD − Source-to-Drain Voltage (V)
4
6
8
10
VGS − Gate-to-Source Voltage (V)
Threshold Voltage Variance Over Temperature
Single Pulse Power, Junction-to-Ambient
0.5
3
0.4
2.5
ID = 250 mA
0.3
2
0.2
Power (W)
V GS(th) Variance (V)
2
0.1
−0.0
1.5
1
TA = 25_C
−0.1
0.5
−0.2
−0.3
−50
0
−25
0
25
50
75
100
125
150
0.01
0.1
1
10
100
600
Time (sec)
TJ − Junction Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 350_C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
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4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 70209
S-41260—Rev. H, 05-Jul-04
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