ONSEMI NTR4101PT1

NTR4101P
Trench Power MOSFET
−20 V, Single P−Channel, SOT−23
Features
•
•
•
•
Leading −20 V Trench for Low RDS(on)
−1.8 V Rated for Low Voltage Gate Drive
SOT−23 Surface Mount for Small Footprint
Pb−Free Package is Available
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V(BR)DSS
RDS(ON) TYP
Applications
ID MAX
70 mW @ −4.5 V
• Load/Power Management for Portables
• Load/Power Management for Computing
• Charging Circuits and Battery Protection
−20 V
P−Channel MOSFET
S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
t ≤ 10 s
TA = 25°C
Steady
State
TA = 25°C
Symbol
Value
Unit
VDSS
−20
V
VGS
±8.0
V
ID
−2.4
A
TA = 85°C
Steady
State
Power Dissipation
(Note 2)
−3.2
PD
0.73
TA = 25°C
ID
TA = 85°C
−1.8
A
W
tp = 10 ms
IDM
−18
A
C = 100 pF,
RS = 1500 W
ESD
225
V
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
−2.4
A
Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
TR4 MG
G
1
2
SOT−23
CASE 318
STYLE 21
Max
Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
170
°C/W
Junction−to−Ambient − t < 10 s (Note 1)
RqJA
100
Junction−to−Ambient − Steady State (Note 2)
RqJA
300
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0
1
1
Gate
2
Source
TR4
= Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
NTR4101PT1
SOT−23
3000/Tape & Reel
NTR4101PT1G
SOT−23
Pb−Free
3000/Tape & Reel
Device
Symbol
© Semiconductor Components Industries, LLC, 2010
3
Drain
3
0.42
June, 2010 − Rev. 5
MARKING DIAGRAM &
PIN ASSIGNMENT
−1.3
PD
ESD Capability (Note 3)
D
W
1.25
TA = 25°C
Pulsed Drain Current
G
−1.7
t ≤ 10 s
Continuous Drain
Current (Note 2)
−3.2 A
90 mW @ −2.5 V
112 mW @ −1.8 V
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTR4101P/D
NTR4101P
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
V(BR)DSS
−20
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 4)
(VGS = 0 V, ID = −250 mA)
V
Zero Gate Voltage Drain Current (Note 4)
(VGS = 0 V, VDS = −16 V)
IDSS
−1.0
mA
Gate−to−Source Leakage Current
(VGS = ±8.0 V, VDS = 0 V)
IGSS
±100
nA
−0.72
−1.2
V
70
90
112
85
120
210
ON CHARACTERISTICS
Gate Threshold Voltage (Note 4)
(VGS = VDS, ID = −250 mA)
VGS(th)
Drain−to−Source On−Resistance
(VGS = −4.5 V, ID = −1.6 A)
(VGS = −2.5 V, ID = −1.3 A)
(VGS = −1.8 V, ID = −0.9 A)
RDS(on)
Forward Transconductance (VDS = −5.0 V, ID = −2.3 A)
−0.4
mW
gFS
75
S
Ciss
675
pF
Coss
100
Crss
75
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
(VGS = 0 V, f = 1 MHz, VDS = −10 V)
Reverse Transfer Capacitance
Total Gate Charge
(VGS = −4.5 V, VDS = −10 V, ID = −1.6 A)
QG(tot)
7.5
Gate−to−Source Gate Charge
(VDS = −10 V, ID = −1.6 A)
QGS
1.2
nC
Gate−to−Drain “Miller” Charge
(VDS = −10 V, ID = −1.6 A)
QGD
2.2
nC
RG
6.5
W
td(on)
7.5
ns
tr
12.6
td(off)
30.2
tf
21.0
VSD
−0.82
−1.2
V
trr
12.8
15
ns
ta
9.9
ns
tb
3.0
ns
Qrr
1008
nC
Gate Resistance
8.5
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VGS = −4.5 V, VDS = −10 V,
ID = −1.6 A, RG = 6.0 W)
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
(VGS = 0 V, IS = −2.4 A)
Reverse Recovery Time
Charge Time
Discharge Time
(VGS = 0 V,
dISD/dt = 100 A/ms, IS = −1.6 A)
Reverse Recovery Charge
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
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2
NTR4101P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10
TJ = 25°C
VGS = −10 V − −2.4 V
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
10
−2.2 V
8
6
−2.0 V
4
−1.8 V
.
−1.6 V
2
0
2
1
3
4
5
6
7
8
125°C
7
6
5
4
3
2
1
VDS ≥ 20 V
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
2
3
4
5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.1
VGS = −5.0 V
0.09
25°C
8
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
TJ = −55°C
9
T = 125°C
0.08
T = 25°C
0.07
0.06
T = −55°C
0.05
0.04
0.03
0.02
0.01
0
7
5
3
−ID, DRAIN CURRENT (AMPS)
1
9
0.15
0.14
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
6
TJ = 25°C
VGS = −2.5 V
VGS = −4.5 V
1
3
7
4
5
6
8
−ID, DRAIN CURRENT (AMPS)
2
9
10
Figure 4. On−Resistance vs. Drain Current and
Temperature
Figure 3. On−Resistance vs. Drain Current and
Temperature
VGS = 0 V
ID = −1.6 A
10000
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
100000
1.4
1.2
1.0
0.8
1000
TJ = 125°C
100
10
0.6
0.4
−50
TJ = 150°C
−25
0
25
50
75
100
125
150
1.0
0
TJ, JUNCTION TEMPERATURE (°C)
2
4
6
8
10
12
14
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
16
NTR4101P
C, CAPACITANCE (pF)
800
4.0
TJ = 25°C
VGS = 0 V
QT
3.5
Ciss
3.0
2.5
600
VDS
2.0
400
VGS
Qgd
Qgs
1.5
1.0
Coss
200
ID = −1.6 A
TJ = 25°C
0.5
0
Crss
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
Qg, TOTAL GATE CHARGE (nC)
0
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and Drain−to−Source
Voltage vs. Total Gate Charge
5
VDD = −10 V
ID = −1.6 A
VGS = −4.5 V
−IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
1000
100
td(off)
tf
tr
td(on)
10
1
1
8
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10
4
3.5
3
2.5
2
1.5
1
0.5
0
100
VGS = 0 V
TJ = 25°C
4.5
0
RG, GATE RESISTANCE (OHMS)
0.2
0.4
0.6
0.8
1.0
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
NTR4101P
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
DIM
A
A1
b
c
D
E
e
L
L1
HE
2
e
b
0.25
q
A
L
A1
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTR4101P/D