IXYS DSEI19-06AS Fast recovery epitaxial diode (fred) Datasheet

Fast Recovery
Epitaxial Diode (FRED)
DSEI 19
VRSM
A
VRRM
V
V
600
600
Type
C
VRRM = 600 V
IFAVM = 20 A
trr
= 35 ns
TO-263 AA
NC
A
DSEI 19-06AS
C (TAB)
A = Anode, C = Cathode,
NC = No connection, TAB = Cathode
Symbol
Test Conditions
Maximum Ratings
IFRMS
IFAVM ÿÿ①
IFRM
TVJ = TVJM
TC = 65°C; rectangular, d = 0.5
tP < 10 ms; rep. rating, pulse width limited by TVJM
25
20
150
A
A
A
IFSM
TVJ = 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
100
110
A
A
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
85
95
A
A
TVJ = 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
50
50
A2s
A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
36
37
A2s
A2s
-40...+150
150
-40...+150
°C
°C
°C
61
W
2
g
Features
International standard surface mount
package JEDEC TO-263 AA
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
●
●
●
●
●
●
TVJ
TVJM
Tstg
Ptot
TC = 25°C
Weight
Symbol
Test Conditions
typ.
TO-263 AA Outline
Characteristic Values
max.
IR
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
VR = VRRM
VR = 0.8 • VRRM
VR = 0.8 • VRRM
50
25
3
mA
mA
mA
VF
IF = 16 A;
TVJ = 150°C
TVJ = 25°C
1.5
1.7
V
V
VT0
rT
For power-loss calculations only
TVJ = TVJM
1.12
23.2
V
mW
2
K/W
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
Characteristic curves are located in the data sheet DSEI 12-06
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
R
0.46
0.74
.018
.029
RthJC
trr
IF = 1 A; -di/dt = 50 A/ms; VR = 30 V; TVJ = 25°C
35
50
ns
IRM
VR = 350 V; IF = 12 A; -diF/dt = 100 A/ms
L £ 0.05 mH; TVJ = 100°C
4
4.4
A
© 2000 IXYS All rights reserved
008
I2t
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