ON Semiconductor 2N6056 NPN Darlington Silicon Power Transistor ON Semiconductor Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS 100 WATTS • High DC Current Gain — • • • hFE = 3000 (Typ) @ IC = 4.0 Adc Collector–Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 80 Vdc (Min) Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc = 3.0 Vdc (Max) @ IC = 8.0 Adc Monolithic Construction with Built–In Base–Emitter Shunt Resistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ MAXIMUM RATINGS (1) Rating Collector–Emitter Voltage Symbol Max Unit VCEO 80 Vdc Collector–Base Voltage VCB 80 Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current — Continuous Peak IC 8.0 16 Adc Base Current IB 120 mAdc Total Device Dissipation @ TC = 25C Derate above 25C PD 100 0.571 Watts W/C TJ, Tstg –65 to +200 C Symbol Max Unit RθJC 1.75 C/W Operating and Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Indicates JEDEC Registered Data PD, POWER DISSIPATION (WATTS) 100 80 60 40 20 0 0 25 50 75 100 125 TC, TEMPERATURE (°C) 150 175 200 Figure 1. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 2 1 Publication Order Number: 2N6056/D 2N6056 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 80 — — 0.5 — — 0.5 5.0 — 2.0 750 100 18000 — — — 2.0 3.0 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (2) (IC = 100 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) ICEO Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150C) ICEX Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Vdc mAdc mAdc mAdc ON CHARACTERISTICS (2) DC Current Gain (IC = 4.0 Adc, VCE = 3.0 Vdc) (IC = 8.0 Adc, VCE = 3.0 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 4.0 Adc, IB = 16 mAdc) (IC = 8.0 Adc, IB = 80 mAdc) VCE(sat) Vdc Base–Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc) VBE(sat) — 4.0 Vdc Base–Emitter On Voltage (IC = 4.0 Adc, VCE = 3.0 Vdc) VBE(on) — 2.8 Vdc Magnitude of Common Emitter Small–Signal Short Circuit Current Transfer Ratio (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) |hfe| 4.0 — — Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob — 200 pF Small–Signal Current Gain (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) hfe 300 — — DYNAMIC CHARACTERISTICS *Indicates JEDEC Registered Data. (2) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0% http://onsemi.com 2 2N6056 5.0 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS -3CC 0V D1 MUST BE FAST RECOVERY TYPE, e.g., 1N5825 USED ABOVE IB ≈ 100 mA RC MSD6100 USED BELOW IB ≈ 100 mA SCOPE TUT V2 RB approx +12 V D1 ≈ 8.0 k ≈ 50 51 0 V1 approx -8.0 V t, TIME (s) µ 2.0 +4.0 V 25 µs for td and tr, D1 is disconnected and V2 = 0 tr, tf ≤ 10 ns DUTY CYCLE = 1.0% ts 3.0 tf 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 For NPN test circuit reverse diode, polarities and input pulses. VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 0.2 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching Times Test Circuit 1.0 0.7 0.5 0.3 0.07 0.05 0.01 0.1 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 3. Switching Times 0.2 0.1 RθJC(t) = r(t) RθJC RθJC = 1.75°C/W 2N6056 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) θJC(t) 0.05 0.02 0.03 0.02 td @ VBE(off) = 0 D = 0.5 0.2 0.1 tr 0.01 SINGLE PULSE 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 t, TIME (ms) 20 30 Figure 4. Thermal Response http://onsemi.com 3 50 70 100 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 200 300 500 700 1000 2N6056 ACTIVE–REGION SAFE OPERATING AREA 50 IC, COLLECTOR CURRENT (AMP) 20 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 200C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.1 ms 10 5.0 0.5 ms 1.0 ms 5.0 ms TJ = 200°C 2.0 1.0 dc SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) 0.5 0.2 0.1 0.05 1.0 2.0 5.0 7.0 10 3.0 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Safe Operating Area 300 5000 3000 2000 200 TJ = 25°C 1000 C, CAPACITANCE (pF) hfe , SMALL-SIGNAL CURRENT GAIN 10,000 TC = 25°C VCE = 3.0 Vdc IC = 3.0 Adc 500 300 200 100 50 30 20 10 1.0 Cob 100 Cib 70 50 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 30 0.1 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 6. Small–Signal Current Gain http://onsemi.com 4 50 100 2N6056 VCE = 3.0 V TJ = 150°C 3000 2000 1000 500 300 200 0.1 25°C -55°C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 3.0 TJ = 25°C 2.6 IC = 2.0 A 4.0 A 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IB, BASE CURRENT (mA) TJ = 25°C 2.5 2.0 1.0 0.5 0.1 10 Figure 9. Collector Saturation Region 3.0 1.5 6.0 A 2.2 Figure 8. DC Current Gain V, VOLTAGE (VOLTS) hFE, DC CURRENT GAIN 10,000 5000 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 20,000 VBE @ VCE = 3.0 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltage http://onsemi.com 5 5.0 7.0 10 20 30 2N6056 PACKAGE DIMENSIONS CASE 1–07 TO–204AA (TO–3) ISSUE Z A N C –T– E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y M DIM A B C D E G H K L N Q U V –Y– L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 –Q– 0.13 (0.005) M INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 6 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 2N6056 Notes http://onsemi.com 7 2N6056 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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