2N6400 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half–wave silicon gate–controlled, solid–state devices are needed. • Glass Passivated Junctions with Center Gate Geometry for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Blocking Voltage to 800 Volts • Device Marking: Logo, Device Type, e.g., 2N6400, Date Code http://onsemi.com SCRs 16 AMPERES RMS 50 thru 800 VOLTS G A *MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) K Rating Symbol Peak Repetitive Off–State Voltage (Note 1.) (TJ = 40 to 125°C, Sine Wave 50 to 60 Hz; Gate Open) 2N6400 2N6401 2N6402 2N6403 2N6404 2N6405 VDRM, VRRM On-State RMS Current (180° Conduction Angles; TC = 100°C) IT(RMS) Average On-State Current (180° Conduction Angles; TC = 100°C) IT(AV) 10 A Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 90°C) ITSM 160 A I2 t 145 A2s 1 Cathode PGM 20 Watts 2 Anode 3 Gate 4 Anode Circuit Fusing (t = 8.3 ms) Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 100°C) Forward Average Gate Power (t = 8.3 ms, TC = 100°C) Value Unit Volts MARKING DIAGRAM 50 100 200 400 600 800 4 TO–220AB CASE 221A STYLE 3 16 YY WW 640x A 1 2 x = 0, 1, 2, 3, 4 or 5 YY = Year WW = Work Week 3 PIN ASSIGNMENT PG(AV) 0.5 Watts Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 100°C) IGM 2.0 A Operating Junction Temperature Range TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +150 °C *Indicates JEDEC Registered Data. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ORDERING INFORMATION Device Package Shipping 2N6400 TO220AB 500/Box 2N6401 TO220AB 500/Box 2N6402 TO220AB 500/Box 2N6403 TO220AB 500/Box 2N6404 TO220AB 500/Box 2N6405 TO220AB 500/Box Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 April, 2001 – Rev. 2 1 Publication Order Number: 2N6400/D 2N6400 Series THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol Max Unit RθJC 1.5 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit – – – – 10 2.0 µA mA OFF CHARACTERISTICS *Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C TJ = 125°C IDRM, IRRM ON CHARACTERISTICS *Peak Forward On–State Voltage (ITM = 32 A Peak, Pulse Width ≤ 1 ms, Duty Cycle ≤ 2%) VTM – – 1.7 Volts *Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) IGT – – 9.0 – 30 60 mA – – 0.7 – 1.5 2.5 0.2 – – – 18 40 – – 60 – 1.0 – – – 15 35 – – – 50 – *Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) Gate Non–Trigger Voltage (VD = 12 Vdc, RL = 100 Ohms) *Holding Current (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = 25°C TC = –40°C VGT TC = 25°C TC = –40°C VGD TC = +125°C TC = 25°C IH *TC = –40°C Turn-On Time (ITM = 16 A, IGT = 40 mAdc, VD = Rated VDRM) Turn-Off Time (ITM = 16 A, IR = 16 A, VD = Rated VDRM) Volts tgt Volts µs µs tq TC = 25°C TJ = +125°C mA DYNAMIC CHARACTERISTICS Critical Rate–of–Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform) dv/dt TJ = +125°C *Indicates JEDEC Registered Data. http://onsemi.com 2 V/µs 2N6400 Series Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current Anode + VTM on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) Anode – 16 124 P(AV) , AVERAGE POWER (WATTS) TC, MAXIMUM CASE TEMPERATURE (° C) 128 α 120 α = CONDUCTION ANGLE 116 112 dc 108 104 100 α = 30° 0 60° 90° 180° 120° 7.0 5.0 6.0 1.0 2.0 3.0 4.0 8.0 9.0 IT(AV), AVERAGE ONSTATE FORWARD CURRENT (AMPS) 180° 14 TJ ≈ 125°C 12 Figure 1. Average Current Derating 120° dc 60° 10 α = 30° 8.0 6.0 4.0 α α = CONDUCTION ANGLE 2.0 10 90° 0 5.0 6.0 1.0 2.0 3.0 4.0 7.0 8.0 9.0 IT(AV), AVERAGE ONSTATE FORWARD CURRENT (AMPS) 0 10 Figure 2. Maximum On–State Power Dissipation http://onsemi.com 3 2N6400 Series 200 100 50 30 20 TJ = 25°C 10 125°C 7.0 5.0 160 3.0 2.0 150 140 1.0 0.7 130 0.5 0.4 0.8 1.2 1.6 2.0 2.4 2.8 4.0 3.2 3.6 vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 110 4.4 SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 1.0 2.0 3.0 4.0 6.0 8.0 10 NUMBER OF CYCLES Figure 3. On–State Characteristics r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) TJ = 125°C f = 60 Hz 120 0.3 0.2 1 CYCLE I TSM , PEAK SURGE CURRENT (AMP) iTM , INSTANTANEOUS ON-STATE FORWARD CURRENT (AMPS) 70 Figure 4. Maximum Non–Repetitive Surge Current 1.0 0.7 0.5 0.3 0.2 ZθJC(t) = RθJC • r(t) 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 t, TIME (ms) 100 Figure 5. Thermal Response http://onsemi.com 4 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k 2N6400 Series TYPICAL CHARACTERISTICS 30 20 TJ = -40°C 10 7.0 5.0 25°C 3.0 2.0 125°C 1.0 0.2 0.5 1.0 2.0 5.0 10 20 PULSE WIDTH (ms) 50 100 100 I GT, GATE TRIGGER CURRENT (mA) OFFSTATE VOLTAGE = 12 V RL = 50 i GT, PEAK GATE CURRENT (mA) 100 70 50 10 1 -40 -25 200 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 110 125 Figure 7. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Current versus Pulse Width 1.0 100 0.9 IH , HOLDING CURRENT (mA) VGT, GATE TRIGGER VOLTAGE (VOLTS) -10 0.8 0.7 0.6 0.5 0.4 10 0.3 0.2 -40 -25 -10 5 20 35 50 65 80 95 110 1 -40 -25 -10 125 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 8. Typical Gate Trigger Voltage versus Junction Temperature Figure 9. Typical Holding Current versus Junction Temperature http://onsemi.com 5 110 125 2N6400 Series PACKAGE DIMENSIONS TO–220AB CASE 221A–07 ISSUE AA –T– B F T SEATING PLANE C S 4 Q A 1 2 3 U H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 3: PIN 1. 2. 3. 4. http://onsemi.com 6 CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 2N6400 Series Notes http://onsemi.com 7 2N6400 Series ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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