2SD2124(L)/(S) Silicon NPN Epitaxial ADE-208-927 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline DPAK 4 2, 4 4 1 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector ID 6 kΩ (Typ) 0.5 kΩ (Typ) 3 2SD2124(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Collector current IC 1.5 A Collector peak current I C(peak) 3.0 A 18 W 150 °C –55 to +150 °C 1.5 A 1 Collector power dissipation PC * Junction temperature Tj Storage temperature Tstg C to E diode forward current Note: ID* 1 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 120 — — V I C = 0.1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 120 — — V I C = 10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 7 — — V I E = 50 mA, IC = 0 Collector cutoff current I CBO — — 10 µA VCB = 100 V, IE = 0 I CEO — — 10 VCE = 100 V, RBE = ∞ DC current transfer ratio hFE 2000 — 30000 VCE = 3 V, IC = 1 A*1 Collector to emitter saturation VCE(sat) — — 1.5 voltage VCE(sat) — — 2.0 Base to emitter saturation VBE(sat) — — 2.0 voltage VBE(sat) — — 2.5 C to E diode forward voltage VD — — 3.0 V I D = 1.5 A*1 Turn on time t on — 0.5 — µs I C = 1 A, IB1 = –IB2 = 1 mA Turn off time t off — 2.0 — µs Note: 2 1. Pulse test. V I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 V I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 2SD2124(L)/(S) Maximum Collector Dissipation Curve Area of Safe Operation 0 50 100 Case temperature TC (°C) IC(max) 1.0 0.3 0.1 0.03 Ta = 25°C 1 shot pulse 0.01 3 10 30 100 300 Collector to emitter voltage VCE (V) 150 DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics 30,000 1.2 200 180 160 140 120 µ A 0.8 0.4 IB = 0 0 TC = 25°C 4 6 8 10 2 Collector to emitter voltage VCE (V) DC current transfer ratio hFE Collector current IC (A) 2.0 1.6 µs 10 IiC(max) C(peak) 0 20 3.0 10 Collector current IC (A) 10 s s 1m 0m =1 n tio PW era ) Op 5°C DC = 2 (T C Collector power dissipation PC (W) 30 10,000 3,000 1,000 VCE = 3 V Ta = 25°C 300 0.03 1.0 0.1 0.3 Collector current IC (A) 3.0 3 2SD2124(L)/(S) Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) Saturation Voltage vs. Collector Current 4 10 3 VBE(sat) 1.0 V CE(sat) 0.3 IC = 500 IB Ta = 25°C 0.1 0.03 0.1 1.0 0.3 Collector current IC (A) 3.0 2SD2124(L)/(S) Package Dimensions 1.7 ± 0.5 Unit: mm 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 16.2 ± 0.5 1.2 ± 0.3 2.29 ± 0.5 0.55 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (L)-(1) — Conforms 0.42 g 2.3 ± 0.2 0.55 ± 0.1 (4.9) (5.3) 6.5 ± 0.5 5.4 ± 0.5 1.2 Max 5.5 ± 0.5 1.7 ± 0.5 Unit: mm 0 – 0.25 2.5 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2.29 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (S)-(1) — Conforms 0.28 g 5 2SD2124(L)/(S) Cautions 1. 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