IXYS IXFK140N20P Polarht hiperfet power mosfet Datasheet

PolarHTTMHiPerFET
Power MOSFET
IXFK 140N20P
VDSS = 200 V
ID25 = 140 A
Ω
RDS(on) ≤ 18 mΩ
≤ 200 ns
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
200
200
V
V
VGS
VGSM
Continous
Transient
±20
±30
V
V
ID25
TC = 25° C
140
A
ID(RMS)
External lead current limit
75
A
IDM
TC = 25° C, pulse width limited by TJM
280
A
IAR
TC = 25° C
60
A
EAR
TC = 25° C
100
mJ
EAS
TC = 25° C
4
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 4 Ω
10
V/ns
PD
Maximum Ratings
830
TJ
TJM
Tstg
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Md
Mounting torque
G
W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300
260
°C
°C
1.13/10 Nm/lb.in.
Weight
10
g
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 250 µA
200
VGS(th)
VDS = VGS, ID = 4 mA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
VGS = 15 V, ID = 140A
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
S
G = Gate
S = Source
l
l
l
(TAB)
D = Drain
TAB = Drain
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
l
l
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
D
Features
TC = 25° C
TL
TSOLD
TO-264 (IXFK)
l
Easy to mount
Space savings
High power density
V
TJ = 150° C
14
5.0
V
±200
nA
25
250
µA
µA
18
mΩ
mΩ
DS99219E(01/06)
IXFK 140N20P
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 0.5 ID25, pulse test
50
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
84
S
7500
pF
1800
pF
280
pF
Crss
td(on)
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
td(off)
RG = 3.3 Ω (External)
30
ns
35
ns
150
ns
90
ns
240
nC
50
nC
100
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
0.18° C/W
RthJC
RthCS
° C/W
0.15
Source-Drain Diode
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
140
A
ISM
Repetitive
280
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
IF = 25 A
-di/dt = 100 A/µs
VR = 100 V, VGS = 0 V
QRM
TO-264 (IXFK) Outline
120
200 ns
3.5
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFK 140N20P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
300
140
VGS = 10V
9V
8V
120
9V
240
100
210
I D - Amperes
I D - Amperes
VGS = 10V
270
80
7V
60
40
6V
8V
180
150
120
7V
90
60
20
6V
30
5V
0
0
0
0.5
1
1.5
2
0
2.5
1
2
3
V D S - Volts
Fig. 3. Output Characteristics
@ 150ºC
4
5
6
V D S - Volts
7
8
9
10
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
140
VGS = 10V
9V
8V
3
R D S ( o n ) - Normalized
120
I D - Amperes
100
7V
80
60
40
6V
20
5V
VGS = 10V
2.5
I D = 140A
2
I D = 70A
1.5
1
0
0.5
0
1
2
3
4
V D S - Volts
5
-50
6
-25
Fig. 5. RDS(on) Norm alized to 0.5 ID25
Value vs. Drain Current
25
50
75
100
125
TJ - Degrees Centigrade
150
175
Fig. 6. Drain Current vs. Case
Tem perature
90
4
TJ = 175ºC
External Lead Current Limit
80
3.5
70
3
2.5
I D - Amperes
R D S ( o n ) - Normalized
0
VGS = 10V
VGS = 15V
2
60
50
40
30
1.5
20
1
10
TJ = 25ºC
0
0.5
0
50
100
150
200
I D - Amperes
© 2006 IXYS All rights reserved
250
300
-50
-25
0
25
50
75
100
125
TC - Degrees Centigrade
150
175
IXFK 140N20P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
225
120
110
200
100
90
150
g f s - Siemens
I D - Amperes
175
125
100
80
70
50
25ºC
40
150ºC
75
TJ = 150ºC
50
25ºC
30
-40ºC
20
25
TJ = -40ºC
60
10
0
0
4
4.5
5
5.5
6
6.5
7
7.5
8
0
40
80
V G S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
200
240
10
300
250
9
VDS = 100V
8
I D = 70A
I G = 10mA
VG S - Volts
7
200
150
6
5
4
3
100
TJ = 150ºC
2
50
TJ = 25ºC
1
0
0
0.4
0.6
0.8
1
1.2
V S D - Volts
1.4
0
25
50
75
100 125 150 175 200 225 250
Q G - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
100,000
1000
TJ = 175ºC
f = 1MHz
TC = 25ºC
R DS(on) Limit
Ciss
10,000
I D - Amperes
Capacitance - picoFarads
160
Fig. 10. Gate Charge
350
I S - Amperes
120
I D - Amperes
Coss
1,000
25µs
100µs
100
1ms
Crss
10ms
DC
100
10
0
5
10
15
20
25
V DS - Volts
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V D S - Volts
1000
IXFK 140N20P
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
R( t h ) J C - ºC / W
1.00
0.10
0.01
0.00
0.1
1
10
Pu ls e W id th - m illis e c o n d s
© 2006 IXYS All rights reserved
100
1000
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