NTGS3130N Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6 Features •Leading Edge Trench Technology for Low On Resistance •Low Gate Charge for Fast Switching •Small Size (3 x 2.75 mm) TSOP-6 Package •This is a Pb-Free Device http://onsemi.com V(BR)DSS Applications Rating Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 2) Power Dissipation (Note 2) Steady State t ≤ 10 s TA = 25°C Value Unit VDSS 20 V TA = 85°C ±8 V ID 4.1 A Source 4 6.2 PD W MARKING DIAGRAM & PIN ASSIGNMENT A Drain Drain Source 6 5 4 1.4 TA = 85°C 4.2 ID 3.0 1 0.6 W IDM 19 A TJ, Tstg -55 to 150 TA = 25°C °C Source Current (Body Diode) IS 1.0 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C tP ≤ 10 s Operating and Storage Temperature Range PD THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - t ≤ 10 s (Note 1) Junction-to-Ambient - Steady State (Note 2) Symbol Max Unit 1 2 3 Drain Drain Gate S9 M G = Specific Device Code = Date Code* = Pb-Free Package *Date Code orientation may vary depending upon manufacturing location. 110 RqJA °C/W 90 200 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface-mounted on FR4 board using the minimum recommended pad size © Semiconductor Components Industries, LLC, 2007 S9 MG G TSOP-6 CASE 318G STYLE 1 (Note: Microdot may be in either location) Junction-to-Ambient - Steady State (Note 1) May, 2007 - Rev. 0 4.9 A Gate 3 1.1 TA = 25°C TA = 25°C Pulsed Drain Current 32 mW @ 2.5 V 5.6 t ≤ 10 s Steady State 5.6 A Drain 1 2 5 6 Symbol VGS TA = 25°C Steady State 24 mW @ 4.5 V N-Channel MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Power Dissipation (Note 1) ID Max 20 V •DC-DC Converters •Lithium Ion Battery Applications •Load/Power Switching Continuous Drain Current (Note 1) RDS(on) mAX 1 ORDERING INFORMATION Device Package Shipping† NTGS3130NT1G TSOP-6 (Pb-Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTGS3130N/D NTGS3130N ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V; ID = 250 mA 20 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Characteristic Typ Max Unit OFF CHARACTERISTICS V 9.8 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V; VDS = 16 V, TJ = 25°C 1.0 mA Gate-to-Source Leakage Current IGSS VDS = 0, VGS = ±8 V 100 nA VGS(TH) VGS = VDS, ID = 250 mA 1.4 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Temperature Coefficient VGS(TH)/TJ Drain-to-Source On-Resistance RDS(on) Forward Transconductance 0.4 0.6 3.4 gFS mV/°C VGS = 4.5 V, ID = 5.6 A 19 24 VGS = 2.5 V, ID = 4.9 A 25 32 VDS = 10 V, ID = 5.6 A 8.2 mW S CHARGES, CAPACITANCE, & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance VGS = 0 V, f = 1 MHz, VDS = 16 V VGS = 0 V, f = 1 MHz, VDS = 10 V CRSS 935 169 104 198 110 Total Gate Charge QG(TOT) 13.2 Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 4.2 Total Gate Charge QG(TOT) 11.8 Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD VGS = 4.5 V VDS = 16 V ID = 5.6 A VGS = 4.5 V VDS = 5.0 V ID = 6.2 A pF 965 20.3 0.60 1.5 18.0 nC 0.6 1.4 2.7 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time td(ON) VGS = 4.5 V, VDD = 16 V, ID = 1 A, RG = 3 W tr td(OFF) tf 6.3 12.6 7.3 13.5 21.7 35.1 9.7 17.6 0.7 1.2 ns DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 1.0 A TJ = 25°C V 20.4 VGS = 0 Vdc, dISD/dt = 100 A/ms, IS = 1.0 A QRR 8.1 8.8 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 ns 11.6 nC NTGS3130N TYPICAL CHARACTERISTICS 25 VGS = 4.5 V to 2.5 V 12 8 1.5 V 4 TJ = 25°C 0 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 1.8 V 2.0 V 16 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 20 15 10 TJ = 25°C 5 TJ = -55°C 0.75 1.0 1.25 1.5 1.75 2.0 VGS, GATE-T O-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics ID = 5.6 A 0.08 0.06 TJ = 125°C 0.04 TJ = 25°C 0.02 0 1.5 2 2.5 3 3.5 4 4.5 5 VGS, GATE VOLTAGE (V) 2.25 0.10 TJ = 25°C 0.08 VGS = 1.8 V 0.06 VGS = 2 V 0.04 VGS = 2.5 V 0.02 VGS = 4.5 V 3V 0.00 2 4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate-to-Source Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 0.04 1400 1200 C, CAPACITANCE (pF) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) TJ = 125°C VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0.10 1 VDS ≥ 5 V 0 0.5 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 20 0.03 VGS = 2.5 V 0.02 VGS = 4.5 V VGS = 0 V TJ = 25°C f = 1 MHz Ciss 1000 800 600 400 Coss 200 0.01 -50 Crss 0 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 TJ, JUNCTION TEMPERATURE (°C) DRAIN-T O-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 18 20 NTGS3130N TYPICAL CHARACTERISTICS 6 VDS 14 VGS 4 12 VDS = 5 V 10 3 QGS QGD 8 VDS = 16 V 2 6 4 1 ID = 5.6 A TJ = 25°C 0 0 2 4 6 VGS = 0 V 16 8 10 12 2 14 IS, SOURCE CURRENT (A) 5 V DS , DRAIN-TO-SOURCE VOLTAGE (V) V GS, GATE-T O-SOURCE VOLTAGE (V) 10 18 QT 125°C TJ = -55°C 0.1 0.2 0 0.3 QG, TOTAL GATE CHARGE (nC) 0.4 0.5 0.6 0.9 1.0 5 SINGLE PULSE RqJA = 110°C/W TA = 25°C 4 10 POWER (W) 100 ms 1 ms 1 0.01 0.8 Figure 8. Diode Forward Voltage vs. Current 100 0.1 0.7 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 7. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge ID, DRAIN CURRENT (A) 25°C 1.0 10 ms VGS = 8 V SINGLE PULSE TC = 25°C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 3 2 1 dc 0 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0 100 1 10 100 1000 SINGLE PULSE TIME (s) Figure 9. Maximum Rated Forward Biased Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation RqJA, EFFECTIVE TRANSIENT THERMAL RESISTANCE NORMALIZED 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.000001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 t, TIME (s) 0.1 Figure 11. Thermal Response http://onsemi.com 4 1 10 100 1000 NTGS3130N PACKAGE DIMENSIONS TSOP-6 CASE 318G-02 ISSUE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 5 4 2 3 E HE 1 DIM A A1 b c D E e L HE q b e q c A 0.05 (0.002) L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° - MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 - MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTGS3130N/D