MITSUBISHI Nch POWER MOSFET FS30KMH-06 HIGH-SPEED SWITCHING USE FS30KMH-06 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡2.5V DRIVE ¡VDSS .................................................................................. 60V ¡rDS (ON) (MAX) .............................................................. 30mΩ ¡ID ......................................................................................... 30A ¡Integrated Fast Recovery Diode (TYP.) ............. 65ns ¡Viso ................................................................................ 2000V 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 q GATE w DRAIN e SOURCE q e TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter Conditions VDSS VGSS Drain-source voltage Gate-source voltage ID IDM Drain current Drain current (Pulsed) IDA Avalanche drain current (Pulsed) IS ISM Source current Source current (Pulsed) PD T ch Maximum power dissipation Channel temperature T stg Viso Storage temperature Isolation voltage AC for 1minute, Terminal to case Weight Typical value — VGS = 0V VDS = 0V L = 100µH Ratings Unit 60 ±10 V V 30 120 A A 30 A 30 120 A A 25 –55 ~ +150 W °C –55 ~ +150 2000 °C V 2.0 g Feb.1999 MITSUBISHI Nch POWER MOSFET FS30KMH-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) trr Thermal resistance Reverse recovery time Limits Test conditions ID = 1mA, VGS = 0V VGS = ±10V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 4V ID = 15A, VGS = 2.5V ID = 15A, VGS = 4V ID = 15A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 30V, ID = 15A, VGS = 4V, RGEN = RGS = 50Ω IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = –100A/µs Unit Min. Typ. Max. 60 — — — — ±0.1 V µA — 0.6 — 0.9 0.1 1.2 mA V — 25 30 mΩ — — 30 0.38 39 0.45 mΩ V — — 34 2000 — — S pF — — 320 170 — — pF pF — — 33 135 — — ns ns — 145 — ns — — 150 1.0 — 1.5 ns V — — — 65 5.00 — °C/W ns PERFORMANCE CURVES 40 30 20 10 0 MAXIMUM SAFE OPERATING AREA 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 0 50 100 150 200 tw = 10ms 101 7 5 3 2 100ms 1ms 10ms 100 7 TC = 25°C 5 Single Pulse DC 3 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 5V 4V 3.5V 50 102 7 5 3 2 20 VGS = 5V 4V 3V 2.5V PD = 25W TC = 25°C Pulse Test 40 2.5V 30 20 2V 10 0 PD = 25W 0 1.0 2.0 3.0 4.0 5.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 3V 16 2V 12 TC = 25°C Pulse Test 8 4 0 1.5V 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30KMH-06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.6 ID = 50A 1.2 0.8 30A 0.4 10A 0 0 1.0 2.0 3.0 20 10 TC = 25°C Pulse Test 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TC = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 4V TRANSFER CHARACTERISTICS (TYPICAL) 30 20 10 102 7 5 4 3 VDS = 10V Pulse Test 2 TC = 25°C 75°C 125°C 101 7 5 4 3 2 0 1.0 2.0 3.0 4.0 100 0 10 5.0 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 Ciss 103 7 5 3 2 Coss 102 7 5 3 Tch = 25°C 2 f = 1MHZ 101 30 DRAIN CURRENT ID (A) 40 0 40 0 5.0 VGS = 2.5V GATE-SOURCE VOLTAGE VGS (V) 50 CAPACITANCE Ciss, Coss, Crss (pF) 4.0 50 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) TC = 25°C Pulse Test Crss VGS = 0V 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 2.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 103 7 5 4 3 2 102 7 5 4 3 TCh = 25°C VDD = 30V VGS = 4V RGEN = RGS = 50Ω td(off) tf tr td(on) 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30KMH-06 HIGH-SPEED SWITCHING USE 5.0 SOURCE CURRENT IS (A) VDS = 10V 3.0 20V 40V 2.0 1.0 0 10 20 30 40 30 75°C 25°C 10 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 2.0 2 100 7 5 4 3 2 –50 0 50 100 VDS = 10V ID = 1mA 1.6 1.2 0.8 0.4 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 TC = 125°C 20 0 101 7 VGS = 4V ID = 1/2ID 5 Pulse Test 4 3 10–1 VGS = 0V Pulse Test 40 50 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 50 Tch = 25°C ID = 30A 4.0 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 D = 1.0 5 3 0.5 2 0.2 100 0.1 7 5 3 2 10–1 0.05 0.02 0.01 Single Pulse 7 5 3 2 PDM tw T D= tw T 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999