ON MMBT5401LT1G High voltage transistor pnp silicon Datasheet

MMBT5401LT1G,
SMMBT5401LT1G,
MMBT5401LT3G
High Voltage Transistor
PNP Silicon
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Features
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
SOT−23 (TO−236)
CASE 318
STYLE 6
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−150
Vdc
Collector −Base Voltage
VCBO
−160
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
IC
−500
mAdc
Collector Current − Continuous
1
BASE
2
EMITTER
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
2L M G
G
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25°C
Derate Above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate Above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
RqJA
556
°C/W
(Note: Microdot may be in either location)
PD
300
mW
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
1
2L
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
MMBT5401LT1G
SOT−23
(Pb−Free)
3,000 Tape & Reel
SMMBT5401LT1G
SOT−23
(Pb−Free)
3,000 Tape & Reel
MMBT5401LT3G
SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
June, 2012 − Rev. 11
1
Publication Order Number:
MMBT5401LT1/D
MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
−150
−
−160
−
−5.0
−
−
−
−50
−50
50
60
50
−
240
−
−
−
−0.2
−0.5
−
−
−1.0
−1.0
100
300
−
6.0
40
200
−
8.0
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
Collector−Base Cutoff Current
(VCB = −120 Vdc, IE = 0)
(VCB = −120 Vdc, IE = 0, TA = 100°C)
ICBO
Vdc
Vdc
Vdc
nAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −1.0 mAdc, VCE = −5.0 Vdc)
(IC = −10 mAdc, VCE = −5.0 Vdc)
(IC = −50 mAdc, VCE = −5.0 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Small Signal Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hfe
Noise Figure
(IC = −200 mAdc, VCE = −5.0 Vdc, RS = 10 W, f = 1.0 kHz)
NF
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2
MHz
pF
−
dB
MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G
200
150
h FE, CURRENT GAIN
TJ = 125°C
100
25°C
70
50
-55°C
VCE = - 1.0 V
VCE = - 5.0 V
30
20
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
IC, COLLECTOR CURRENT (mA)
10
20
30
50
100
10
20
50
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
0.5
10 mA
30 mA
100 mA
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
IB, BASE CURRENT (mA)
2.0
5.0
Figure 2. Collector Saturation Region
103
IC, COLLECTOR CURRENT (A)
μ
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
102
VCE = 30 V
IC = ICES
101
TJ = 125°C
100
75°C
10-1
10-2
REVERSE
25°C
10-3
0.3
0.2
FORWARD
0.1
0
0.1
0.2 0.3 0.4
0.5
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut−Off Region
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3
0.6
0.7
MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G
1.0
0.18
IC/IB = 10
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.20
0.15
0.13 150°C
0.10
25°C
0.08
0.05 −55°C
0.03
0
0.0001
0.001
0.01
25°C
0.7
150°C
0.6
0.5
0.4
0.3
0.0001
IC, COLLECTOR CURRENT (A)
θV, TEMPERATURE COEFFICIENT (mV/ °C)
VBE(on), BASE−EMITTER VOLTAGE (V)
VCE = 10 V
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.0001
0.001
0.01
2.5
1.5
1.0
0.5
-0.5
-1.0
-1.5
qVB for VBE(sat)
-2.0
-2.5
0.1
0.1
qVC for VCE(sat)
0
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 6. Base Emitter Voltage vs. Collector
Current
100
70
50
C, CAPACITANCE (pF)
VCC
-30 V
100
10 ms
INPUT PULSE
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
0.25 mF
3.0 k
RC
Vout
RB
5.1 k
Vin
100
50
100
Figure 7. Temperature Coefficients
10.2 V
Vin
0.1
TJ = - 55°C to 135°C
2.0
IC, COLLECTOR CURRENT (A)
VBB
+8.8 V
0.01
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
1.1
0.9
0.001
IC, COLLECTOR CURRENT (A)
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
−55°C
0.8
0.2
0.1
IC/IB = 10
0.9
TJ = 25°C
30
Cibo
20
10
7.0
5.0
Cobo
3.0
1N914
2.0
1.0
0.2
Values Shown are for IC @ 10 mA
Figure 8. Switching Time Test Circuit
0.3
2.0 3.0
5.0 7.0
0.5 0.7 1.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
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4
10
20
MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G
1000
700
500
2000
IC/IB = 10
TJ = 25°C
tr @ VCC = 120 V
tr @ VCC = 30 V
200
t, TIME (ns)
t, TIME (ns)
300
1000
700
500
100
70
50
td @ VBE(off) = 1.0 V
VCC = 120 V
10
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
200
ts @ VCC = 120 V
30
50
100
20
0.2 0.3 0.5
200
1.0
2.0 3.0 5.0
10
20 30
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 10. Turn−On Time
Figure 11. Turn−Off Time
50
100
200
1
VCE = 1 V
TA = 25°C
IC, COLLECTOR CURRENT (A)
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
tf @ VCC = 30 V
300
1000
100
10
tf @ VCC = 120 V
100
70
50
30
20
IC/IB = 10
TJ = 25°C
0.1
1
10
100
10 mSec
0.1
1 Sec
0.01
0.001
1
IC, COLLECTOR CURRENT (A)
10
100
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 12. Current Gain Bandwidth Product
Figure 13. Safe Operating Area
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5
1000
MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
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