Zetex FMMT4400 Sot23 npn silicon planar general purpose transistor Datasheet

FMMT4400
FMMT4401
SWITCHING CHARACTERISTICS (at Tamb= 25°C )
PARAMETER
SYMBOL
Turn-On Time
ton
Turn-Off Time
t off
MIN.
MAX.
UNIT
CONDITIONS
35
ns
VCC=30V, VBE(off)=2V
IC=150mA, IB1=15mA
(See Fig.1)
255
ns
VCC=30V, IC=150mA
IB1=IB2=15mA
(See Fig. 2)
SOT23 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 4 – FEBRUARY 1997
PARTMARKING DETAILS:
FMMT4400
FMMT4401
✪
FMMT4400 - 1KZ
FMMT4401 - 1L
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Continuous Collector Current
IC
600
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
FMMT4400
PARAMETER
SYMBOL
MIN.
Collector-Emitter
Breakdown Voltage
V(BR)CEO
40
40
V
IC=1mA, IB=0
Collector-Base
Breakdown Voltage
V(BR)CBO
60
60
V
IC=0.1mA, IE=0
Emitter-Base
Breakdown Current
V(BR)EBO
6
6
V
IE=0.1mA, IC=0
Collector-Emitter
Cut-Off Current
ICEX
0.1
0.1
µA VCE=35V
Base Cut-Off
Current
IBEX
0.1
0.1
µA VCE=35V
Static Forward
Current
TransferRatio
hFE
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
0.75
Transition
Frequency
fT
200
Output Capacitance
Cobo
6.5
6.5
pF VCB=5 V,IE=0
f=100kHz
Input Capacitance
Cibo
30
30
pF VBE=0.5V, IC=0
f=100kHz
20
40
50
20
MAX.
FMMT4401
150
MIN.
20
40
80
100
40
0.4
0.75
0.95
1.2
0.75
MAX.
VEB(off) =3V
IC=0.1mA, VCE=1V
IC=1mA, VCE=1V
IC=10mA, VCE=1V
IC=150mA, VCE=1V*
IC=500mA, VCE=2V*
0.4
0.75
V
V
IC=150mA,IB=15mA*
IC=500mA,IB=50mA*
0.95
1.2
V
V
IC=150mA,IB=15mA*
IC=500mA,IB=50mA*
250
PAGE NUMBER
VEB(off) =0.4V
300
MHz IC=20mA,VCE=10V
f=100kHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
PAGE NUMBER
UNIT CONDITIONS
FMMT4400
FMMT4401
SWITCHING CHARACTERISTICS (at Tamb= 25°C )
PARAMETER
SYMBOL
Turn-On Time
ton
Turn-Off Time
t off
MIN.
MAX.
UNIT
CONDITIONS
35
ns
VCC=30V, VBE(off)=2V
IC=150mA, IB1=15mA
(See Fig.1)
255
ns
VCC=30V, IC=150mA
IB1=IB2=15mA
(See Fig. 2)
SOT23 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 4 – FEBRUARY 1997
PARTMARKING DETAILS:
FMMT4400
FMMT4401
✪
FMMT4400 - 1KZ
FMMT4401 - 1L
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Continuous Collector Current
IC
600
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
FMMT4400
PARAMETER
SYMBOL
MIN.
Collector-Emitter
Breakdown Voltage
V(BR)CEO
40
40
V
IC=1mA, IB=0
Collector-Base
Breakdown Voltage
V(BR)CBO
60
60
V
IC=0.1mA, IE=0
Emitter-Base
Breakdown Current
V(BR)EBO
6
6
V
IE=0.1mA, IC=0
Collector-Emitter
Cut-Off Current
ICEX
0.1
0.1
µA VCE=35V
Base Cut-Off
Current
IBEX
0.1
0.1
µA VCE=35V
Static Forward
Current
TransferRatio
hFE
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
0.75
Transition
Frequency
fT
200
Output Capacitance
Cobo
6.5
6.5
pF VCB=5 V,IE=0
f=100kHz
Input Capacitance
Cibo
30
30
pF VBE=0.5V, IC=0
f=100kHz
20
40
50
20
MAX.
FMMT4401
150
MIN.
20
40
80
100
40
0.4
0.75
0.95
1.2
0.75
MAX.
VEB(off) =3V
IC=0.1mA, VCE=1V
IC=1mA, VCE=1V
IC=10mA, VCE=1V
IC=150mA, VCE=1V*
IC=500mA, VCE=2V*
0.4
0.75
V
V
IC=150mA,IB=15mA*
IC=500mA,IB=50mA*
0.95
1.2
V
V
IC=150mA,IB=15mA*
IC=500mA,IB=50mA*
250
PAGE NUMBER
VEB(off) =0.4V
300
MHz IC=20mA,VCE=10V
f=100kHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
PAGE NUMBER
UNIT CONDITIONS
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