Hamamatsu G11193 Ingaas pin photodiode Datasheet

InGaAs PIN photodiodes
G11193 series
Small package, surface mount type
Features
Applications
Small SMD (surface mount device) package
Optical power meter
Low noise, low dark current
Measurement/analytical instruments
Low price
Structure
Parameter
Package
Photosensitive area
Window
G11193-02R
G11193-03R
Unit
mm
-
SMD
φ0.2
φ0.3
Resin
Absolute maximum ratings
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
VR Max.
Topr
Tstg
Condition
G11193-02R
G11193-03R
Unit
V
°C
°C
10
-25 to +85
-40 to +100
No dew condensation*1
No dew condensation*1
*1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation
may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product
within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response
range
Peak sensitivity
wavelength
Photo sensitivity
Dark current
Cut-off frequency
Terminal capacitance
Shunt resistance
Detectivity
Symbol
λ
Condition
Higher than 10%
of peak
λp
S
ID
fc
Ct
Rsh
D*
λ=1.3 μm
λ=1.55 μm
VR=5 V
VR=5 V, RL=50 Ω
VR=5 V, f=1 MHz
VR=10 mV
λ=λp
Min.
G11193-02R
Typ.
Max.
Min.
G11193-03R
Typ.
Max.
Unit
-
0.9 to 1.7
-
-
0.9 to 1.7
-
μm
-
1.55
-
-
1.55
-
μm
0.75
0.77
-
0.85
1.0
40
1
3
1000
5 × 1012
800
-
0.75
0.77
-
0.85
1.0
100
0.5
5
700
5 × 1012
1200
-
A/W
pA
GHz
pF
MΩ
cmăHz1/2/W
The G11193 series may be damaged by electrostatic discharge, etc. Be careful when using the G11193 series.
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1
InGaAs PIN photodiodes
G11193 series
Spectral response
Photo sensitivity temperature characteristic
(Typ. Ta=25 °C)
1.2
Temperature coefficient (%/°C)
1.0
Photo sensitivity (A/W)
(Typ. Ta=25 °C)
2
0.8
0.6
0.4
0.2
0
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
1.5
1
0.5
0
-0.5
-1
0.2
0.4
0.6
0.8
Wavelength (µm)
1.0
1.2
1.4
1.8
Wavelength (µm)
KIRDB0409EA
KIRDB0445EA
Dark current vs. reverse voltage
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 °C)
10 nA
1.6
(Typ. Ta=25 °C, f=1 MHz)
1 nA
Terminal capacitance
Dark current
1 nA
G11193-03R
100 pA
10 pA
G11193-02R
100 pF
G11193-03R
10 pF
G11193-02R
1 pF
1 pA
100 fA
0.01
0.1
1
10
100
Reverse voltage (V)
100 fF
0.01
0.1
1
10
100
Reverse voltage (V)
KIRDB0446EA
KIRDB0447EA
2
InGaAs PIN photodiodes
G11193 series
Dark current vs. ambient temperature
(Typ. VR=5 V)
100 nA
Dark current
10 nA
1 nA
G11193-03R
100 pA
G11193-02R
10 pA
1 pA
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100
Ambient temperature (°C)
KIRDB0448EA
3
InGaAs PIN photodiodes
G11193 series
Dimensional outline (unit: mm)
Photosensitive area
5.0 ± 0.2
1.2 ± 0.2
1.8
0.6 ± 0.2
1.8
1.0 ± 0.1
4.0 ± 0.2
Photosensitive surface
(2 ×)R 0.4 ± 0.1
1.5
1.0
0.6
(2 ×) (R 0.2)
Cathode
Anode
0.7
3.0
0.7
Type no. Photosensitive area
G11193-02R
0.2
G11193-03R
0.3
KIRDA0210EB
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Surface mount type products
Technical information
∙ Infrared detectors
Information described in this material is current as of July, 2015.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KIRD1111E02 Jul. 2015 DN
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