LRC L74VHC1GU04DTT1 Advanced high speed cmos unbuffered inverter fabricated with silicon gate cmos technology Datasheet

LESHAN RADIO COMPANY, LTD.
Unbuffered Inverter
L74VHC1GU04
The L74VHC1GU04 is an advanced high speed CMOS Unbuffered inverter fabricated with silicon gate CMOS technology. It
achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
This device consists of a single unbuffered inverter. In combination with others, or in the L74VHCU04 Hex Unbuffered Inverter,
these devices are well suited for use as oscillators, pulse shapers, and in many other applications requiring a high–input impedance
amplifier. For digital applications, the L74VHC1G04 or the L74VHC04 are recommended.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The L74VHC1GU04 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This
allows the L74VHC1GU04 to be used to interface 5 V circuits to 3 V circuits.
• High Speed: t PD = 2.5 ns (Typ) at V CC = 5 V
• Low Power Dissipation: I CC = 2 mA (Max) at T A = 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 105; Equivalent Gates = 26
MARKING DIAGRAMS
5
4
1
2
V6d
3
SC–70/SC–88A/SOT–353
DF SUFFIX
Pin 1
d = Date Code
5
Figure 1. Pinout (Top View)
4
V6d
1
2
3
SOT–23/TSOP–5/SC–59
DT SUFFIX
Figure 2. Logic Symbol
Pin 1
d = Date Code
FUNCTION TABLE
PIN ASSIGNMENT
1
NC
2
IN A
3
4
5
GND
OUT Y
V CC
Inputs
A
L
H
Output
Y
H
L
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 5 of this data sheet.
1/6
LESHAN RADIO COMPANY, LTD.
L74VHC1GU04
MAXIMUM RATINGS
Symbol
V CC
V IN
V OUT
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Parameter
I IK
I OK
I OUT
I CC
PD
θ JA
TL
TJ
T stg
Input Diode Current
Output Diode Current
V OUT < GND; V OUT > V CC
DC Output Current, per Pin
DC Supply Current, V CC and GND
Power dissipation in still air
SC–88A, TSOP–5
Thermal resistance
SC–88A, TSOP–5
Lead Temperature, 1 mm from Case for 10 s
Junction Temperature Under Bias
Storage temperature
V ESD
ESD Withstand Voltage
Value
– 0.5 to + 7.0
– 0.5 to +7.0
– 0.5 to +7.0
–0.5 to V cc + 0.5
–20
+20
+ 25
+50
200
333
260
+ 150
–65 to +150
V CC=0
High or Low State
Unit
V
V
V
mA
mA
mA
mA
mW
°C/W
°C
°C
°C
Human Body Model (Note 2)
>2000
V
Machine Model (Note 3)
> 200
Charged Device Model (Note 4)
N/A
I LATCH–UP
Latch–Up Performance Above V CC and Below GND at 125°C (Note 5)
± 500
mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
V CC = 3.3 ± 0.3 V
V CC = 5.0 ± 0.5 V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
80
90
100
110
120
130
140
Time,
Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time,
Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
NORMALIZED FAILURE RATE
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V CC
DC Supply Voltage
V IN
DC Input Voltage
V OUT
DC Output Voltage
TA
Operating Temperature Range
t r ,t f
Input Rise and Fall Time
Min
2.0
0.0
0.0
– 55
0
0
Max
5.5
5.5
V CC
+ 125
No Limit
No Limit
Unit
V
V
V
°C
ns/V
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
2/6
LESHAN RADIO COMPANY, LTD.
L74VHC1GU04
DC ELECTRICAL CHARACTERISTICS
Symbol
V IH
V IL
V OH
Parameter
Test Conditions
Minimum High–Level
Input Voltage
Maximum Low–Level
Input Voltage
Minimum High–Level
Output Voltage
V IN = V IH or V IL
I OH = – 50 µA
V CC
(V)
T A = 25°C
T A < 85°C –55°C<TA<125°C
Min Typ Max Min Max Min Max Unit
2.0
3.0
1.7
2.4
1.7
2.4
1.7
2.4
4.5
5.5
3.6
4.4
3.6
4.4
3.6
4.4
V
2.0
3.0
0.3
0.6
0.3
0.6
0.3
0.6
4.5
5.5
0.9
1.1
0.9
1.1
0.9
1.1
2.0
3.0
1.9
2.9
2.0
3.0
1.9
2.9
1.9
2.9
4.5
4.4
4.5
4.4
4.4
I OH = –4 mA
I OH = –8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V IN = V IH or V IL
I OL = 50 µA
2.0
3.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
4.5
0.0
0.1
0.1
0.1
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
V IN = V IH or V IL
V
V
V IN = V IH or V IL
V OL
Maximum Low–Level
Output Voltage
V IN = V IH or V IL
V
V IN = V IH or V IL
I OL = 4 mA
I OL = 8 mA
I IN
Maximum Input
Leakage Current
V IN = 5.5 V or GND
0 to5.5
±0.1
±1.0
±1.0
µA
I CC
Maximum Quiescent
Supply Current
V IN = V CC or GND
5.5
2.0
20
40
µA
AC ELECTRICAL CHARACTERISTICS C load = 50 pF, Input t r = t f = 3.0 ns
Symbol
t PLH ,
t PHL
Parameter
Maximum
Propagation Delay,
Test Conditions
Min
T A = 25°C
T A < 85°C –55°C<TA<125°C
Typ
Max Min Max Min Max Unit
V CC = 3.3± 0.3 V C L = 15 pF
C L = 50 pF
3.5
4.8
8.9
11.4
10.5
13.0
12.0
15.5
V CC = 5.0± 0.5 V C L = 15 pF
2.5
5.5
6.5
8.0
C L = 50 pF
3.8
4
7.0
10
8.0
10
9.5
10
ns
Input A or B to Y
C IN
Maximum Input
pF
Capacitance
Typical @ 25°C, V
C PD
Power Dissipation Capacitance (Note 6)
CC
= 5.0 V
22
pF
6. C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without
load. Average operating current can be obtained by the equation: I CC(OPR) = C PD • V CC • f in + I CC . C PD is used to determine the no–
load dynamic power consumption; P D = C PD • V CC 2 • f in + I CC • V CC .
3/6
LESHAN RADIO COMPANY, LTD.
L74VHC1GU04
*Includes all probe and jig capacitance
Figure 4. Switching Waveforms
Figure 5. Test Circuit
DEVICE ORDERING INFORMATION
Device Nomenclature
Device
Order Number
Temp
Circuit
Range Technology Device
Indicator
Function
Identifier
Package
Suffix
Tape &
Reel
Suffix
L74VHC1GU04DFT1
L
74
VHC1G
U04
DF
T1
L74VHC1GU04DFT2
L
74
VHC1G
U04
DF
T2
L74VHC1GU04DFT4
L
74
VHC1G
U04
DF
T4
L74VHC1GU04DTT1
L
74
VHC1G
U04
DT
T1
L74VHC1GU04DTT3
L
74
VHC1G
U04
DT
T3
Package Type
(Name/SOT#/
Common Name)
SC–70/SC–88A/
SOT–353
SC–70/SC–88A/
SOT–353
SC–70/SC–88A/
SOT–353
SOT–23/TSOPS/
SC–59
SOT–23/TSOPS/
SC–59
Tape and
Reel Size
178 mm (7 in)
3000 Unit
178 mm (7 in)
3000 Unit
330 mm (13 in)
10,000 Unit
178 mm (7 in)
3000 Unit
330 mm (13 in)
10,000 Unit
4/6
LESHAN RADIO COMPANY, LTD.
L74VHC1GU04
PACKAGE DIMENSIONS
SC70−5/SC−88A/SOT−353
DF SUFFIX
A
G
5
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
4
DIM
A
B
C
D
G
H
J
K
N
S
−B−
S
1
2
3
D 5 PL
0.2 (0.008)
B
M
M
N
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
−−−
0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
J
C
K
H
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm inches
5/6
LESHAN RADIO COMPANY, LTD.
L74VHC1GU04
PACKAGE DIMENSIONS
SOT23−5/TSOP−5/SC59−5
DT SUFFIX
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. A AND B DIMENSIONS DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
D
S
5
4
1
2
3
B
L
G
DIM
A
B
C
D
G
H
J
K
L
M
S
A
J
C
0.05 (0.002)
H
M
K
MILLIMETERS
MIN
MAX
2.90
3.10
1.30
1.70
0.90
1.10
0.25
0.50
0.85
1.05
0.013
0.100
0.10
0.26
0.20
0.60
1.25
1.55
0_
10 _
2.50
3.00
INCHES
MIN
MAX
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0610
0_
10 _
0.0985 0.1181
SOLDERING FOOTPRINT*
0.95
0.037
1.9
0.074
2.4
0.094
1.0
0.039
0.7
0.028
SCALE 10:1
mm inches
6/6
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