IPW60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg R DS(on),max • Extreme dv/dt rated Q g,typ 650 V 0.099 Ω 60 nC • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant PG-TO247-3-1 • Ultra low gate charge CoolMOS CP is specially designed for: • Hard switching SMPS topologies for Server and Telecom Type Package Ordering Code Marking IPW60R099CP PG-TO247-3-1 SP000067147 6R099 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 31 T C=100 °C 19 Pulsed drain current2) I D,pulse T C=25 °C 93 Avalanche energy, single pulse E AS I D=11 A, V DD=50 V 800 Avalanche energy, repetitive t AR2),3) E AR I D=11 A, V DD=50 V 1.2 Avalanche current, repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg Mounting torque Rev. 2.1 Unit A mJ 11 A V DS=0...480 V 50 V/ns static ±20 V AC (f >1 Hz) ±30 T C=25 °C 255 W -55 ... 150 °C M3 and M3.5 screws page 1 60 Ncm 2008-02-19 Please note the new package dimensions arccording to PCN 2009-134-A IPW60R099CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current IS Diode pulse current 2) I S,pulse Reverse diode dv /dt 4) dv /dt Parameter Symbol Conditions Value Unit 18 T C=25 °C A 93 15 V/ns Values Unit min. typ. max. - - 0.5 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C V K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 600 - - Gate threshold voltage V GS(th) V DS=V GS, I D=1.2 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - - 5 V DS=600 V, V GS=0 V, T j=150 °C - 50 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=18 A, T j=25 °C - 0.09 0.099 Ω V GS=10 V, I D=18 A, T j=150 °C - 0.24 - f =1 MHz, open drain - 1.3 - Gate resistance Rev. 2.1 RG page 2 Ω 2008-02-19 Please note the new package dimensions arccording to PCN 2009-134-A IPW60R099CP Parameter Values Symbol Conditions Unit min. typ. max. - 2800 - - 130 - - 130 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy related5) C o(er) Effective output capacitance, time related6) C o(tr) - 340 - Turn-on delay time t d(on) - 10 - Rise time tr - 5 - Turn-off delay time t d(off) - 60 - Fall time tf - 5 - Gate to source charge Q gs - 14 - Gate to drain charge Q gd - 20 - Gate charge total Qg - 60 80 Gate plateau voltage V plateau - 5.0 - V - 0.9 1.2 V - 450 - ns - 12 - µC - 70 - A V GS=0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D=18 A, R G=3.3 Ω ns Gate Charge Characteristics V DD=400 V, I D=18 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=18 A, T j=25 °C V R=400 V, I F=I S, di F/dt =100 A/µs 1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) ISD≤ID, di/dt≤100A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch 5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 2.1 page 3 2008-02-19 Please note the new package dimensions arccording to PCN 2009-134-A IPW60R099CP 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 102 300 10 µs limited by on-state resistance 1 µs 100 µs 101 1 ms DC I D [A] P tot [W] 200 10 ms 100 100 0 10-1 0 40 80 120 100 160 101 T C [°C] 102 103 V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics ZthJC=f(tP) I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 100 120 10 V 20 V 105 8V 0.5 90 7V 0.2 10-1 I D [A] Z thJC [K/W] 75 0.1 0.05 0.02 0.01 10 -2 60 6V 45 single pulse 5.5 V 30 5V 15 4.5 V 10-3 10-5 0 10-4 10-3 10-2 10-1 100 Rev. 2.1 0 5 10 15 20 V DS [V] t p [s] page 4 2008-02-19 Please note the new package dimensions arccording to PCN 2009-134-A IPW60R099CP 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 50 0.5 7V 8V 10 V 20 V 6V 5.5 V 40 5.5 V 0.4 6V 6.5 V 7V R DS(on) [Ω] I D [A] 30 5V 20 0.3 5V 20 V 0.2 4.5 V 10 0.1 0 0 0 5 10 15 20 0 10 20 V DS [V] 30 40 50 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=18 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 0.3 160 0.25 C °25 120 I D [A] R DS(on) [Ω] 0.2 0.15 80 98 % C °150 typ 0.1 40 0.05 0 0 -60 -20 20 60 100 140 180 T j [°C] Rev. 2.1 0 2 4 6 8 10 V GS [V] page 5 2008-02-19 Please note the new package dimensions arccording to PCN 2009-134-A IPW60R099CP 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=18 A pulsed I F=f(V SD) parameter: V DD parameter: T j 102 12 25 °C, 98% 150 °C, 98% 10 25 °C 150 °C 8 101 120 V I F [A] V GS [V] 400 V 6 100 4 2 10-1 0 0 10 20 30 40 50 0 60 0.5 1 Q gate [nC] 1.5 12 Drain-source breakdown voltage E AS=f(T j); I D=11 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 1000 700 750 660 V BR(DSS) [V] E AS [mJ] 11 Avalanche energy 500 250 620 580 0 540 20 60 100 140 180 T j [°C] Rev. 2.1 2 V SD [V] -60 -20 20 60 100 140 180 T j [°C] page 6 2008-02-19 Please note the new package dimensions arccording to PCN 2009-134-A IPW60R099CP 13 Typ. capacitances 14 Typ. Coss stored energy C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS) 105 20 104 16 Ciss 12 E oss [µJ] C [pF] 103 Coss 2 8 101 4 10 Crss 100 0 0 50 100 150 200 V DS [V] Rev. 2.1 0 100 200 300 400 500 600 V DS [V] page 7 2008-02-19 Please note the new package dimensions arccording to PCN 2009-134-A IPW60R099CP Definition of diode switching characteristics Rev. 2.1 page 8 2008-02-19 Please note the new package dimensions arccording to PCN 2009-134-A IPW60R099CP PG-TO247-3: Outlines Rev. 2.1 page 9 2008-02-19 Please note the new package dimensions arccording to PCN 2009-134-A IPW60R099CP Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 10 2008-02-19 Please note the new package dimensions arccording to PCN 2009-134-A Data sheet erratum PCN 2009-134-A New package outlines TO-247 1 New package outlines TO-247 Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet Erratum Rev. 2.0, 2010-02-01