Vishay DG309BDQ-T1 Improved quad cmos analog switch Datasheet

DG308B/309B
Vishay Siliconix
Improved Quad CMOS Analog Switches
DESCRIPTION
FEATURES
The DG308B/309B analog switches are highly improved
versions of the industry-standard DG308A/309. These
devices are fabricated in Vishay Siliconix’ proprietary silicon
gate CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
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These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design
minimizes switching transients. The DG308B and DG309B
can handle up to ± 22 V input signals. An epitaxial layer
prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off
condition.
The DG308B is a normally open switch and the DG309B is
a normally closed switch. (See Truth Table.)
± 22 V Supply Voltage Rating
CMOS Compatible Logic
Low On-Resistance - rDS(on): 45 Ω
Low Leakage - ID(on): 20 pA
Single Supply Operation Possible
Extended Temperature Range
Fast Switching - tON: < 200 ns
Low Glitching - Q: 1 pC
Pb-free
Available
RoHS*
COMPLIANT
BENEFITS
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Wide Analog Signal Range
Simple Logic Interface
Higher Accuracy
Minimum Transients
Reduced Power Consumption
Superior to DG308A/309
Space Savings (TSSOP)
APPLICATIONS
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Industrial Instrumentation
Test Equipment
Communications Systems
Disk Drives
Computer Peripherals
Portable Instruments
Sample-and-Hold Circuits
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG308B
Dual-In-Line, SOIC and TSSOP
IN1
D1
S1
VGND
S4
D4
IN4
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
IN2
D2
TRUTH TABLE
Logic
0
1
S2
V+
NC
DG308B
OFF
ON
DG309B
ON
OFF
Logic "0" ≤ 3.5 V
Logic "1" ≥ 11 V
S3
D3
IN3
Top View
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70047
S-71241–Rev. F, 25-Jun-07
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1
DG308B/309B
Vishay Siliconix
ORDERING INFORMATION
Temp Range
Package
Part Number
DG308BDJ
DG308BDJ-E3
16-Pin PlasticDIP
DG309BDJ
DG309BDJ-E3
DG308BDY
DG308BDY-E3
DG308BDY-T1
DG308BDY-T1-E3
16-Pin Narrow SOIC
DG309BDY
DG309BDY-E3
DG309BDY-T1
DG309BDY-T1-E3
- 40 to 85 °C
DG308BDQ
DG308BDQ-E3
DG308BDQ-T1
DG308BDQ-T1-E3
16-Pin TSSOP
DG309BDQ
DG309BDQ-E3
DG309BDQ-T1
DG309BDQ-T1-E3
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Voltages Referenced, V+ to VGND
25
(V-) - 2 to (V+) + 2
or
30 mA, whichever occurs first
Digital Inputsa, VS, VD
Current, Any Terminal
30
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max)
100
Storage Temperature
Power Dissipation (Package)b
Unit
44
(AK Suffix)
- 65 to 150
(DJ, DY and DQ Suffix)
- 65 to 125
16-Pin Plastic DIPc
470
16-Pin Narrow SOIC and TSSOPd
640
e
16-Pin CerDIP
V
mA
°C
mW
900
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
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Document Number: 70047
S-71241–Rev. F, 25-Jun-07
DG308B/309B
Vishay Siliconix
SPECIFICATIONSa
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
Parameter
Analog Switch
Symbol
Analog Signal Rangee
Drain-Source
On-Resistance
rDS(on) Match
VANALOG
rDS(on)
ΔrDS(on)
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Mind
Maxd
Mind
- 15
15
- 15
VIN = 11 V, 3.5 Vf
Tempb
45
VD = ± 10 V, IS = 1 mA
Room
Full
Room
± 0.01
- 0.5
- 20
0.5
20
- 0.5
-5
0.5
5
Typc
Full
85
100
Maxd
Unit
15
V
85
100
Ω
2
%
Source Off Leakage Current
IS(off)
VS = ± 14 V, VD = ± 14 V
Room
Full
Drain Off Leakage Current
ID(off)
VD = ± 14 V, VS = ± 14 V
Room
Full
± 0.01
- 0.5
- 20
0.5
20
- 0.5
-5
0.5
5
Drain On Leakage Current
ID(on)
VS = VD = ± 14 V
Room
Full
± 0.02
- 0.5
- 40
0.5
40
- 0.5
- 10
0.5
10
nA
Digital Control
Input, Voltage High
VINH
Full
Input, Voltage Low
VINL
Full
Input Current
Input Capacitance
IINH or IINL
VINH or VINL
CIN
11
3.5
Full
Room
11
-1
1
3.5
-1
1
5
V
µA
pF
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Source-Off Capacitance
Charge Injection
Q
CS(off)
Drain-Off Capacitance
CD(off)
Channel-On Capacitance
CD(on)
Off-Isolation
Channel-to-Channel
Crosstalk
Power Supply
OIRR
Positive Supply Current
XTALK
VS = 3 V, See Figure 2
CL = 1000 pF, Vg = 0 V, Rg = 0 Ω
VS = 0 V, f = 1 MHz,
Power Supply Range for
Continuous Operation
VOP
Document Number: 70047
S-71241–Rev. F, 25-Jun-07
200
150
Room
1
Room
5
Room
5
Room
16
CL = 15 pF, RL = 50 Ω,
VS = 1 VRMS, f = 100 kHz
Room
90
Room
95
VIN = 0 V or 15 V
I-
200
150
VD = VS = 0 V, f = 1 MHz
I+
Negative Supply Current
Room
Room
ns
pC
pF
dB
Room
Full
Room
Full
1
5
-1
-5
Full
±4
1
5
-1
-5
± 22
±4
± 22
µA
V
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DG308B/309B
Vishay Siliconix
SPECIFICATIONS FOR SINGLE SUPPLYa
Test Conditions
Unless Specified
V+ = 12 V, V- = 0 V
VIN = 11 V, 3.5 Vf
Tempb
VANALOG
Full
rDS(on)
VD = 3 V, 8 V, IS = 1 mA
Room
Full
Parameter
Analog Switch
Symbol
Analog Signal Rangee
Drain-Source
On-Resistance
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Charge Injection
Q
VS = 8 V, See Figure 2
Typc
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Mind
Maxd
Mind
12
0
0
90
160
200
Maxd
Unit
12
V
160
200
Ω
Room
300
300
Room
200
200
CL = 1 nF, Vgen = 6 V, Rgen = 0 Ω
Room
VIN = 0 V or 12 V
Room
Full
Room
Full
-1
-5
Full
4
4
ns
pC
Power Supply
Positive Supply Current
I+
Negative Supply Current
I-
Power Supply Range for
Continuous Operation
VOP
1
5
1
5
-1
-5
44
4
44
µA
V
Notes:
a. Refer to PROCESS OPTION FLOWCHART .
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70047
S-71241–Rev. F, 25-Jun-07
DG308B/309B
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
r DS(on) – Drain-Source On-Resistance (Ω)
r DS(on) – Drain-Source On-Resistance (Ω)
110
100
90
±5V
80
70
± 10 V
60
50
± 15 V
40
± 20 V
30
20
-8
-4
0
4
8
12
16
80
70
60
125 °C
50
85 °C
40
25 °C
30
- 55 °C
20
10
0
- 15
10
- 20 - 16 - 12
V+ = 15 V
V- = - 15 V
90
20
- 10
-5
10
15
40
250
V+ = 5 V
225
V+ = 22 V
V- = - 22 V
TA = 25 °C
30
200
20
175
150
I S,I D – Current (pA)
r DS(on) – Drain-Source On-Resistance (Ω)
5
rDS(on) vs. VD and Temperature
rDS(on) vs. VD and Power Supply Voltages
7V
125
10 V
100
12 V
15 V
75
ID(on)
10
IS(off), ID(off)
0
- 10
- 20
50
- 30
25
0
0
2
4
6
8
10
12
14
- 40
- 20
16
- 15
- 10
-5
VD – Drain Voltage (V)
0
5
10
15
20
Analog Voltage
Leakage Currents vs. Analog Voltage
rDS(on) vs. VD and Single Power Supply Voltages
30
1 nA
V+ = 15 V
V- = - 15 V
VS, V D = ± 14 V
20
Q – Charge (pC)
I S, I D – Current
0
VD – Drain Voltage (V)
VD – Drain Voltage (V)
100 pA
IS(off), ID(off)
10 pA
10
V+ = 15 V
V- = - 15 V
0
V+ = 12 V
V- = 0 V
- 10
- 20
1 pA
- 55
- 35
- 15
5
25
45
65
85
105 125
Temperature (°C)
Leakage Currents vs. Temperature
Document Number: 70047
S-71241–Rev. F, 25-Jun-07
- 30
- 15
- 10
-5
0
5
10
15
Analog Voltage (V)
QS, QD – Charge Injection vs. Analog Voltage
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DG308B/309B
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
120
V+ = 15 V
V- = - 15 V
110
OIRR (dB)
100
90
RL = 50 Ω
80
70
60
50
40
10 k
100 k
1M
10 M
f – Frequency (Hz)
Off Isolation vs. Frequency
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
SX
V-
Level
Shift/
Drive
V+
INX
DX
GND
V–
Figure 1.
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Document Number: 70047
S-71241–Rev. F, 25-Jun-07
DG308B/309B
Vishay Siliconix
TEST CIRCUITS
+ 15 V
V+
D
S
VS = + 3 V
VO
Logic
Input
tr < 20 ns
tf < 20 ns
12 V
50 %
0V
tOFF
IN
V-
GND
CL
35 pF
RL
1 kΩ
12 V
90 %
Switch
Output
VO
tON
- 15 V
RL
VO = VS
RL + rDS(on)
Figure 2. Switching Time
C
+ 15 V
+ 15 V
C
V+
S1
VS
V+
S
VS
VO
D
D1
Rg= 50 Ω
50 Ω
IN1
Rg = 50 Ω
0 V, 15 V
50 Ω
IN
S2
NC
0 V, 15 V
GND
V-
C
50 Ω
IN2
0 V, 15 V
GND
- 15 V
C = RF bypass
XTA LK Isolation = 20 log
VS
Off Isolation = 20 log
VO
Figure 3. Off Isolation
- 15 V
ΔVO
VO
V+
S
D
VO
CL
1000 pF
12 V
GND
C
Figure 4. Channel-to-Channel Crosstalk
IN
Vg
V-
VS
VO
+ 15 V
Rg
VO
D2
INX
ON
OFF
ON
VΔV O = measured voltage error due to charge injection
The charge injection in coulombs is Q = CL x ΔVO
- 15 V
Figure 5. Charge Injection
Document Number: 70047
S-71241–Rev. F, 25-Jun-07
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DG308B/309B
Vishay Siliconix
APPLICATIONS
30 pF
+5V
VIN1
+ 15 V
VL
+ 15 V
V+
+
LM101A
VIN2
+ 15 V
-
DG419
- 15 V
RF1
18 kΩ
RF1
9.9 kΩ
RF1
100 kΩ
RG1
2 kΩ
RG2
100 Ω
RG3
100 Ω
DG308B
CH
V-
GND
- 15 V
Gain =
Gain 1 (x 1)
RF + RG
Gain 2 (x 10)
RG
Gain 3 (x 100)
Gain 4 (x 1000)
V-
GND
Logic High = Switch On
- 15 V
Figure 6. A Precision Amplifier with Digitally Programmable Inputs and Gains
15 V
V+
Logic Input
Low = Sample
High = Hold
1 kΩ
+ 15 V
+ 15 V
- 15 V
-
J202
LM101A
VIN
+
5 MΩ
50 pF
5.1 MΩ
DG309B
V30 pF
Aquisition Time
Aperature Time
Sample to Hold Offset
Droop Rate
- 15 V
200 Ω
2N4400
VOUT
1000 pF
J500
J507
- 15 V
= 25 µs
= 1 µs
= 5 mV
= 5 mV/s
Figure 7. Sample-and-Hold
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Document Number: 70047
S-71241–Rev. F, 25-Jun-07
DG308B/309B
Vishay Siliconix
APPLICATIONS
+ 15 V
160
V1
C4
fC3
Select
TTL
Control
150 pF
120
C3
1500 pF
Voltage Gain dB
fC4
Select
C2
fC2
Select
0.015 μF
fC1
Select
0.15 µF
C1
80
fC1
fC2
fC3
fL1
0
V-
DG309B
fC4
40
fL2
fL3
fL4
GND
- 40
1
- 15 V
10
100
1k
R3 = 1 MΩ
+ 15 V
- 15 V
R1 = 10 kΩ
LM101A
+
R2 = 10 kΩ
VOUT
AL (Voltage Gain Below Break Frequency) =
1
fC (Break Frequency) =
2πR3CX
100 k
1M
Max Attenuation =
rDS(on)
10 kΩ
R3
R1
= 100 (40 dB)
1
2πR1CX
fL (Unity Gain Frequency) =
30 pF
10 k
Frequency – Hz
≈
- 40 dB
Figure 8. Active Low Pass Filter with Digitally Selected Break Frequency
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70047.
Document Number: 70047
S-71241–Rev. F, 25-Jun-07
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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