IXYS IXGH30N120C3H1 Genx3 1200v igbt Datasheet

Preliminary Technical Information
IXGH30N120C3H1
GenX3TM 1200V IGBT
VCES
= 1200V
= 24A
IC100
VCE(sat) ≤ 4.2V
= 42ns
tfi(typ)
High speed PT IGBTs for
10-50kHz Switching
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
VGES
VGEM
TO-247AD
1200
1200
V
V
Continuous
Transient
±20
±30
V
V
IC25
IC100
ICM
TC = 25°C
TC = 100°C
TC = 25°C, 1ms
48
24
115
A
A
A
G
IA
TC = 25°C
20
A
EAS
TC = 25°C
250
mJ
SSOA
(RBSOA)
VGE = 15V, TJ = 125°C, RG = 5Ω
Clamped Inductive Load
ICM = 60
@VCE ≤ 1200
A
V
PC
TC = 25°C
250
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10
Nm/lb.in.
z
300
260
°C
°C
z
6
g
z
TJ
TJM
Tstg
Md
Mounting Torque
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
Weight
C
TAB
E
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z
z
Optimized for Low Conduction and
Switching Losses
Square RBSOA
Anti-Parallel Ultra Fast Diode
Avalanche Rated
International Standard Package
Advantages
z
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVCES
IC
= 250μA, VGE = 0V
1200
VGE(th)
IC
= 250μA, VCE = VGE
3.0
ICES
VCE = VCES VGE= 0V
V
TJ = 125°C
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC
= 24A, VGE = 15V, Note 2
TJ = 125°C
© 2009 IXYS CORPORATION, All rights reserved
z
3.6
3.2
5.0
V
100
1.5
μA
mA
±100
nA
4.2
V
V
High Power Density
Low Gate Drive Requirement
Applications
z
z
z
z
z
AC Motor Speed Control
DC Servo and Robot Drives
DC Choppers
Uninterruptible Power Supplies (UPS)
Switch-Mode and Resonant-Mode
Power Supplies
DS100123(03/09)
IXGH30N120C3H1
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
IC = 24A, VCE = 10V, Note 2
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
10
17
S
1810
185
50
pF
pF
pF
80
nC
11
nC
37
nC
18
33
1.45
106
42
ns
ns
mJ
ns
ns
Qg
Qge
IC = 24A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Inductive Load, TJ = 25°C
IC = 24A, VGE = 15V
VCE = 600V, RG = 5Ω
Note 1
Eoff
0.47
td(on)
tri
Eon
td(off)
tfi
Eoff
20
40
2.50
135
280
1.30
Inductive Load, TJ = 125°C
IC = 24A, VGE = 15V
VCE = 600V, RG = 5Ω
Note 1
RthJC
RthCK
TO-247 (IXGH) AD Outline
0.21
0.85
mJ
2.10
ns
ns
mJ
ns
ns
mJ
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
0.50 °C/W
°C/W
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
VF
IF = 20A, VGE = 0V
IRM
trr
IF = 20A, -diF/dt = 750A/μs, VR = 800V
VGE = 0V
3.0
2.8
TJ = 125°C
19
70
RthJC
Notes:
V
V
A
ns
0.9 °C/W
1.
2.
Switching Times May Increase for VCE (Clamp) > 0.5 • VCES,
Higher TJ or Increased RG.
Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGH30N120C3H1
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
48
180
VGE = 15V
13V
11V
44
40
140
36
32
13V
120
9V
28
IC - Amperes
IC - Amperes
VGE = 15V
160
24
20
16
100
11V
80
60
7V
12
9V
40
8
20
4
7V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0
2
4
6
8
40
16
18
20
22
24
26
28
VGE = 15V
1.4
1.3
VCE(sat) - Normalized
36
IC - Amperes
14
1.5
VGE = 15V
13V
11V
44
12
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
48
10
VCE - Volts
VCE - Volts
32
9V
28
24
20
7V
16
12
1.2
I
C
= 48A
I
C
= 24A
I
C
= 12A
1.1
1.0
0.9
0.8
8
4
0.7
5V
0.6
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
25
5.5
50
75
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
125
150
Fig. 6. Input Admittance
60
8.0
7.5
55
TJ = 25ºC
50
7.0
45
6.5
6.0
5.5
I
C
IC - Amperes
VCE - Volts
100
TJ - Degrees Centigrade
= 48A
5.0
4.5
40
35
30
25
TJ = 125ºC
25ºC
- 40ºC
20
24A
4.0
15
3.5
10
3.0
5
12A
2.5
0
6
7
8
9
10
11
12
VGE - Volts
© 2009 IXYS CORPORATION, All rights reserved
13
14
15
4.0
4.5
5.0
5.5
6.0
6.5
7.0
VGE - Volts
7.5
8.0
8.5
9.0
9.5
IXGH30N120C3H1
Fig. 8. Gate Charge
Fig. 7. Transconductance
16
24
TJ = - 40ºC
22
VCE = 600V
14
I C = 24A
20
25ºC
16
14
I G = 10mA
12
VGE - Volts
g f s - Siemens
18
125ºC
12
10
8
10
8
6
4
6
4
2
2
0
0
0
5
10
15
20
25
30
35
40
45
50
55
60
0
65
10
20
Fig. 9. Capacitance
40
50
60
70
80
Fig. 10. Reverse-Bias Safe Operating Area
70
10,000
f = 1 MHz
60
Cies
50
1,000
IC - Amperes
Capacitance - PicoFarads
30
QG - NanoCoulombs
IC - Amperes
Coes
100
40
30
20
TJ = 125ºC
10
Cres
0
200
10
0
5
10
15
20
25
30
35
40
RG = 5Ω
dV / dt < 10V / ns
400
600
VCE - Volts
800
1000
1200
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_30N120C3H1(4A)03-10-09
IXGH30N120C3H1
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
2.8
10
Eoff
2.6
TJ = 125ºC , VGE = 15V
Eon -
9
---
5
= 48A
1.8
4
1.6
3
1.4
5
TJ = 125ºC
1.6
4
1.2
3
0.8
2
2
I C = 24A
1.2
0.4
1
1.0
6
8
10
12
14
16
18
20
22
24
26
28
1
TJ = 25ºC
0.0
0
4
0
10
30
15
20
25
RG - Ohms
Eon
----
I C = 48A
1.5
4
1.0
3
I C = 24A
0.5
0.0
55
65
75
85
95
105
115
t f - Nanoseconds
Eoff - MilliJoules
5
Eon - MilliJoules
2.0
45
tf
td(off) - - - -
VCE = 600V
340
I
320
C
300
= 24A
250
300
200
280
150
I
2
260
1
125
240
C
= 48A
100
50
4
6
8
10
12
14
16
18
20
22
24
26
28
30
RG - Ohms
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
tf
400
RG = 5Ω , VGE = 15V
350
VCE = 600V
td(off) - - - -
500
200
450
tf
185
400
RG = 5Ω , VGE = 15V
t d(off) - Nanoseconds
170
300
155
TJ = 125ºC
140
200
125
150
110
160
150
td(off) - - - -
140
VCE = 600V
350
130
300
120
250
110
I
200
C
= 24A
100
I C = 48A
150
90
95
100
80
50
80
50
70
0
65
0
TJ = 25ºC
10
15
20
25
30
35
IC - Amperes
© 2009 IXYS CORPORATION, All rights reserved
40
45
50
25
35
45
55
65
75
85
95
TJ - Degrees Centigrade
105
115
60
125
t d(off) - Nanoseconds
450
215
t f - Nanoseconds
500
100
350
TJ = 125ºC, VGE = 15V
TJ - Degrees Centigrade
250
50
t d(off) - Nanoseconds
VCE = 600V
35
45
400
360
6
RG = 5Ω , VGE = 15V
25
40
380
7
Eoff
35
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
3.0
2.5
30
IC - Amperes
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
t f - Nanoseconds
- MilliJoules
C
VCE = 600V
on
I
- MilliJoules
6
6
E
on
2.2
----
Eon
RG = 5Ω , VGE = 15V
2.0
7
2.0
Eoff
8
VCE = 600V
2.4
7
2.4
Eoff - MilliJoules
2.8
E
Eoff - MilliJoules
3.0
IXGH30N120C3H1
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
200
160
55
140
50
140
45
I
120
= 48A
C
40
100
35
80
I
C
30
= 24A
60
19
40
16
13
20
15
0
10
12
14
16
18
20
22
24
26
28
30
10
10
RG - Ohms
25
22
20
8
28
80
40
6
31
TJ = 125ºC, 25ºC
100
25
4
td(on) - - - -
VCE = 600V
120
60
20
tr
t d(on) - Nanoseconds
VCE = 600V
34
RG = 5Ω , VGE = 15V
t d(on) - Nanoseconds
t r - Nanoseconds
td(on) - - - -
TJ = 125ºC, VGE = 15V
160
t r - Nanoseconds
tr
180
60
15
20
25
30
35
40
45
50
IC - Amperes
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
160
30
tr
140
td(on) - - - -
28
RG = 5Ω , VGE = 15V
t r - Nanoseconds
26
VCE = 600V
100
24
I C = 48A
80
22
60
20
40
18
I
C
t d(on) - Nanoseconds
120
= 24A
20
16
0
25
35
45
55
65
75
85
95
105
115
14
125
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_30N120C3H1(4A)03-10-09
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