MMBT2369LT1G, MMBT2369ALT1G Switching Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Emitter Voltage VCES 40 Vdc Collector −Base Voltage VCBO 40 Vdc Emitter −Base Voltage VEBO 4.5 Vdc IC 200 mAdc Collector Current − Continuous Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 2 EMITTER 3 SOT−23 CASE 318 STYLE 6 1 THERMAL CHARACTERISTICS Characteristic 1 BASE Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C PD RqJA PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 2 MARKING DIAGRAM xxx M G G 1 xxx = M1J or 1JA M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBT2369LT1G SOT−23 (Pb−Free) 3000/Tape & Reel MMBT2369ALT1G SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 September, 2009 − Rev. 7 1 Publication Order Number: MMBT2369LT1/D MMBT2369LT1G, MMBT2369ALT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Collector −Emitter Breakdown Voltage (Note 3) (IC = 10 mAdc, IB = 0) V(BR)CEO Collector −Emitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) V(BR)CES Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Min Typ Max 15 − − 40 − − 40 − − 4.5 − − − − − − 0.4 30 − − 0.4 40 − 40 20 30 20 20 − − − − − − − 120 120 − − − − − − − − − − − − − − − 0.25 0.20 0.30 0.25 0.50 0.7 − − − − − − − 0.85 1.02 1.15 1.60 − − 4.0 5.0 − − − 5.0 13 − 8.0 12 − 10 18 Unit OFF CHARACTERISTICS Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) ICBO Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) MMBT2369A ICES Vdc Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc, TA = −55°C) (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) MMBT2369 MMBT2369A MMBT2369A MMBT2369A MMBT2369A MMBT2369 MMBT2369A Collector −Emitter Saturation Voltage (Note 3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) MMBT2369 MMBT2369A MMBT2369A MMBT2369A MMBT2369A Base −Emitter Saturation Voltage (Note 3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = −55°C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) MMBT2369/A MMBT2369A MMBT2369A MMBT2369A hFE VCE(sat) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Cobo Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Small Signal Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) hfe pF − SWITCHING CHARACTERISTICS Storage Time (IB1 = IB2 = IC = 10 mAdc) ts Turn−On Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) ton Turn−Off Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) toff 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. http://onsemi.com 2 ns ns ns MMBT2369LT1G, MMBT2369ALT1G t1 +10.6 V 0 -1.5 V 3V < 1 ns 270 W t1 +10.8 V 3.3 k -2 V Cs* < 4 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% 10 V 95 W 0 < 1 ns Cs* < 12 pF 1k PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% *Total shunt capacitance of test jig and connectors. Figure 2. ton Circuit − 100 mA Figure 1. ton Circuit − 10 mA +10.75 V 270 W t1 +11.4 V t1 10 V 0 -8.6 V 0 -9.15 V < 1 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% Cs* < 12 pF 1k < 1 ns PULSE WIDTH (t1) BETWEEN 10 AND 500 ms DUTY CYCLE = 2% Cs* < 4 pF 3.3 k 95 W 1N916 *Total shunt capacitance of test jig and connectors. Figure 4. toff Circuit − 100 mA Figure 3. toff Circuit − 10 mA TO OSCILLOSCOPE INPUT IMPEDANCE = 50 W RISE TIME = 1 ns TURN-ON WAVEFORMS Vin 0 220 W 10% Vout ton 90% PULSE GENERATOR Vin RISE TIME < 1 ns SOURCE IMPEDANCE = 50 W PW ≥ 300 ns DUTY CYCLE < 2% Vin 0.1 mF Vout 3.3 kW 50 W VBB +- 50 W 3.3 k 0.0023 mF 0.005 mF 0.0023 mF 0.005 mF 0.1 mF 0.1 mF 3 10% Vin 90% Vout +V =3V - CC Figure 5. Turn−On and Turn−Off Time Test Circuit http://onsemi.com TURN-OFF WAVEFORMS 0 toff VBB = +12 V Vin = -15 V MMBT2369LT1G, MMBT2369ALT1G 100 6 LIMIT TYPICAL TJ = 25°C 5 Cib SWITCHING TIMES (nsec) CAPACITANCE (pF) 4 3 Cob 2 1 0.1 βF = 10 VCC = 10 V VOB = 2 V 50 10 5 ts td 2 0.2 0.5 1.0 2.0 REVERSE BIAS (VOLTS) 5.0 C < COPT 1 10 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 7. Typical Switching Times t1 +6 V C=0 10 V 980 0 -4 V COPT 500 < 1 ns Cs* < 3 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% TIME Figure 8. Turn−Off Waveform VCE , MAXIMUM COLLECTOR-EMITTER VOLTAGE (VOLTS) VCC = 10 V tr Figure 6. Junction Capacitance Variations C tf tr (VCC = 3 V) 20 Figure 9. Storage Time Equivalent Test Circuit 1.0 TJ = 25°C 0.8 IC = 3 mA IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA 0.6 0.4 0.2 0.02 0.05 0.1 0.2 0.5 1 IB, BASE CURRENT (mA) 2 5 Figure 10. Maximum Collector Saturation Voltage Characteristics http://onsemi.com 4 10 20 MMBT2369LT1G, MMBT2369ALT1G TJ = 125°C VCE = 1 V 75°C 25°C 100 TJ = 25°C and 75°C -15°C 50 -55°C 20 1 2 5 10 IC, COLLECTOR CURRENT (mA) 20 50 Figure 11. Minimum Current Gain Characteristics 1.4 V(sat) , SATURATION VOLTAGE (VOLTS) hFE, MINIMUM DC CURRENT GAIN 200 βF = 10 TJ = 25°C 1.2 MAX VBE(sat) 1.0 MIN VBE(sat) 0.8 0.6 0.4 0.2 MAX VCE(sat) 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 Figure 12. Saturation Voltage Limits http://onsemi.com 5 100 100 MMBT2369LT1G, MMBT2369ALT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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