OM6517SA OM6526SA INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE 1000 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • • • • • • • • Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available Screened To MIL-S-19500, TX, TXV and S Levels Ceramic Feedthroughs Available DESCRIPTION This IGBT power transistor features the high switching speeds of a power MOSFET and the low on-resistance of a bipolar transistor. It is ideally suited for high power switching applications such as frequency converters for 3Ø motors, UPS and high power SMPS. MAXIMUM RATINGS @ 25°C Unless Specified Otherwise PART NUMBER OM6517SA OM6526SA IC (Cont.) @ 90°C, A 20 15 V(BR)CES V 1000 1000 VCE (sat) (Typ.) V 4.0 4.0 Tf (Typ.) ns 300 300 PD W 125 85 qJC °C/W 1.0 1.5 TJ °C 150 150 3.1 MECHANICAL OUTLINE SCHEMATIC .940 Collector .540 .100 2 PLCS. Z-Pak .050 .040 .200 .040 .125 DIA. 2 PLS. .800 .790 .685 .665 .250 .290 .545 .535 .144 DIA. .260 MAX .740 TO-254 .550 .530 .540 .125 2 PLCS. Gate .500 MIN. Emitter .150 .550 .510 .040 DIA. 3 PLCS. .150 .300 .005 .045 .035 .150 TYP. .150 TYP. .260 .249 PACKAGE OPTIONS MOD PAK Z-TAB 6 PIN SIP Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA. IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information. 4 11 R2 Supersedes 2 07 R1 3.1 - 157 PRELIMINARY DATA: OM6526SA IGBT CHARACTERISTICS IGBT CHARACTERISTICS Parameter - OFF Min. Typ. Max. Units Test Conditions Parameter - OFF Min. Typ. Max. Units Test Conditions V(BR)CES Collector Emitter 1000 V(BR)CES Collector Emitter 1000 V Breakdown Voltage ICES VCE = 0 IC = 250 µA 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 Zero Gate Voltage 0.25 mA VCE = Max. Rat., VGE = 0 Drain Current 1.0 mA VCE = 0.8 Max. Rat., VGE = 0 ±100 nA VGE = ±20 V V Breakdown Voltage ICES IC = 150 µA Zero Gate Voltage 150 µA VCE = Max. Rat., VGE = 0 Drain Current 700 µA VCE = 0.8 Max. Rat., VGE = 0 Gate Emitter Leakage ±100 nA VGE = ±20 V TC = 125°C IGES Gate Emitter Leakage Current VGE(th) Gate Threshold Voltage 4.5 6.5 3.0 V VCE = VGE, IC = 1 mA VGE(th) V VGE = 15 V, IC = 15 A VCE(sat) Collector Emitter Saturation Voltage TC = 25°C VCE(sat) Collector Emitter 4.0 4.5 V Saturation Voltage Cies Input Capacitance Coes Cres VCE = 0 V VGE = 15 V, IC = 15 A Gate Threshold Voltage 4.5 6.5 3.0 V V Saturation Voltage VCE = VGE, IC = 700 µA VGE = 15 V, IC = 10 A TC = 25°C VCE(sat) Collector Emitter TC = 125°C Dynamic Forward Transductance Current Parameter - ON VCE(sat) Collector Emitter gfs TC = 125°C IGES VCE = 0 V Parameter - ON VCE = 0 4.0 4.5 V Saturation Voltage VGE = 15 V, IC = 10 A TC = 125°C Dynamic S VCE = 20 V, IC = 15 A gfs Forward Transductance S VCE = 20 V, IC = 10 A 2000 pF VGE = 0 Cies Input Capacitance 1300 pF VGE = 0 Output Capacitance 160 pF VCE = 25 V Coes Output Capacitance 100 pF VCE = 25 V Reverse Transfer Capacitance 65 pF f = 1 mHz Cres Reverse Transfer Capacitance 50 pF f = 1 mHz 5.5 Switching-Resistive Load 3.5 Switching-Resistive Load Td(on) Turn-On Time 50 nS VCC = 600 V, IC = 15 A Td(on) Turn-On Time 50 nS VCC = 600 V, IC = 10 A tr Rise Time 200 nS VGE = 15 V, Rg = 3.3 , tr Rise Time 200 nS VGE = 15 V, Rg = 3.3 , Td(off) Turn-Off Delay Time 200 nS Tj = 125°C Td(off) Turn-Off Delay Time 200 nS Tj = 125°C tf Fall Time 300 nS tf Fall Time 300 nS Switching-Inductive Load Switching-Inductive Load Td(off) Turn-Off Delay Time 200 nS VCEclamp = 600 V, IC = 15 A Td(off) Turn-Off Delay Time 200 nS VCEclamp = 600 V, IC = 10 A tf Fall Time 200 nS VGE = 15 V, Rg = 3.3 tf Fall Time 200 nS VGE = 15 V, Rg = 3.3 Eoff Turn-Off Losses 1.5 Eoff Turn-Off Losses 1.1 mWs L = 1 mH, Tj = 125°C mWs L = 1 mH, Tj = 125°C OM6517SA OM6526SA 3.1 PRELIMINARY DATA: OM6517SA