IRF OM6517SA Isolated igbts in a hermetic package Datasheet

OM6517SA
OM6526SA
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-254AA PACKAGE
1000 Volt, 15 And 20 Amp, N-Channel IGBT
In A Hermetic Metal Package
FEATURES
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Isolated IGBTs In A Hermetic Package
High Input Impedance
Low On-Voltage
High Current Capability
High Switching Speed
Low Tail Current
Available Screened To MIL-S-19500, TX, TXV and S Levels
Ceramic Feedthroughs Available
DESCRIPTION
This IGBT power transistor features the high switching speeds of a power MOSFET
and the low on-resistance of a bipolar transistor. It is ideally suited for high power
switching applications such as frequency converters for 3Ø motors, UPS and high
power SMPS.
MAXIMUM RATINGS @ 25°C Unless Specified Otherwise
PART
NUMBER
OM6517SA
OM6526SA
IC (Cont.)
@ 90°C, A
20
15
V(BR)CES
V
1000
1000
VCE (sat) (Typ.)
V
4.0
4.0
Tf (Typ.)
ns
300
300
PD
W
125
85
qJC
°C/W
1.0
1.5
TJ
°C
150
150
3.1
MECHANICAL OUTLINE
SCHEMATIC
.940
Collector
.540
.100
2 PLCS.
Z-Pak
.050
.040
.200
.040
.125 DIA.
2 PLS.
.800
.790
.685
.665
.250
.290
.545
.535
.144 DIA.
.260
MAX
.740
TO-254
.550
.530
.540
.125
2 PLCS.
Gate
.500
MIN.
Emitter
.150
.550
.510
.040 DIA.
3 PLCS.
.150
.300
.005
.045
.035
.150 TYP.
.150 TYP.
.260
.249
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA.
IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
4 11 R2
Supersedes 2 07 R1
3.1 - 157
PRELIMINARY DATA: OM6526SA
IGBT CHARACTERISTICS
IGBT CHARACTERISTICS
Parameter - OFF
Min. Typ. Max. Units Test Conditions
Parameter - OFF
Min. Typ. Max. Units Test Conditions
V(BR)CES Collector Emitter
1000
V(BR)CES Collector Emitter
1000
V
Breakdown Voltage
ICES
VCE = 0
IC = 250 µA
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Zero Gate Voltage
0.25
mA
VCE = Max. Rat., VGE = 0
Drain Current
1.0
mA
VCE = 0.8 Max. Rat., VGE = 0
±100
nA
VGE = ±20 V
V
Breakdown Voltage
ICES
IC = 150 µA
Zero Gate Voltage
150
µA
VCE = Max. Rat., VGE = 0
Drain Current
700
µA
VCE = 0.8 Max. Rat., VGE = 0
Gate Emitter Leakage
±100
nA
VGE = ±20 V
TC = 125°C
IGES
Gate Emitter Leakage
Current
VGE(th)
Gate Threshold Voltage
4.5
6.5
3.0
V
VCE = VGE, IC = 1 mA
VGE(th)
V
VGE = 15 V, IC = 15 A
VCE(sat) Collector Emitter
Saturation Voltage
TC = 25°C
VCE(sat) Collector Emitter
4.0
4.5
V
Saturation Voltage
Cies
Input Capacitance
Coes
Cres
VCE = 0 V
VGE = 15 V, IC = 15 A
Gate Threshold Voltage
4.5
6.5
3.0
V
V
Saturation Voltage
VCE = VGE, IC = 700 µA
VGE = 15 V, IC = 10 A
TC = 25°C
VCE(sat) Collector Emitter
TC = 125°C
Dynamic
Forward Transductance
Current
Parameter - ON
VCE(sat) Collector Emitter
gfs
TC = 125°C
IGES
VCE = 0 V
Parameter - ON
VCE = 0
4.0
4.5
V
Saturation Voltage
VGE = 15 V, IC = 10 A
TC = 125°C
Dynamic
S
VCE = 20 V, IC = 15 A
gfs
Forward Transductance
S
VCE = 20 V, IC = 10 A
2000
pF
VGE = 0
Cies
Input Capacitance
1300
pF
VGE = 0
Output Capacitance
160
pF
VCE = 25 V
Coes
Output Capacitance
100
pF
VCE = 25 V
Reverse Transfer Capacitance
65
pF
f = 1 mHz
Cres
Reverse Transfer Capacitance
50
pF
f = 1 mHz
5.5
Switching-Resistive Load
3.5
Switching-Resistive Load
Td(on)
Turn-On Time
50
nS
VCC = 600 V, IC = 15 A
Td(on)
Turn-On Time
50
nS
VCC = 600 V, IC = 10 A
tr
Rise Time
200
nS
VGE = 15 V, Rg = 3.3 ,
tr
Rise Time
200
nS
VGE = 15 V, Rg = 3.3 ,
Td(off)
Turn-Off Delay Time
200
nS
Tj = 125°C
Td(off)
Turn-Off Delay Time
200
nS
Tj = 125°C
tf
Fall Time
300
nS
tf
Fall Time
300
nS
Switching-Inductive Load
Switching-Inductive Load
Td(off)
Turn-Off Delay Time
200
nS
VCEclamp = 600 V, IC = 15 A
Td(off)
Turn-Off Delay Time
200
nS
VCEclamp = 600 V, IC = 10 A
tf
Fall Time
200
nS
VGE = 15 V, Rg = 3.3
tf
Fall Time
200
nS
VGE = 15 V, Rg = 3.3
Eoff
Turn-Off Losses
1.5
Eoff
Turn-Off Losses
1.1
mWs L = 1 mH, Tj = 125°C
mWs L = 1 mH, Tj = 125°C
OM6517SA OM6526SA
3.1
PRELIMINARY DATA: OM6517SA
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