ON MPSW64 One watt darlington transistor Datasheet

ON Semiconductort
MPSW63
MPSW64 *
One Watt Darlington
Transistors
PNP Silicon
w
*ON Semiconductor Preferred Device
These devices are available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
MAXIMUM RATINGS
1
Symbol
MPSW63
MPSW64
Unit
Collector −Emitter Voltage
VCES
−30
Vdc
Collector −Base Voltage
VCBO
−30
Vdc
Emitter −Base Voltage
Rating
VEBO
−10
Vdc
Collector Current — Continuous
IC
−500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
Watt
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
Watts
mW/°C
TJ, Tstg
−55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
Operating and Storage Junction
Temperature Range
2
3
CASE 29−10, STYLE 1
TO−92 (TO−226AE)
COLLECTOR 3
BASE
2
THERMAL CHARACTERISTICS
Characteristic
EMITTER 1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
V(BR)CES
−30
—
Vdc
Collector Cutoff Current
(VCB = −30 Vdc, IE = 0)
ICBO
—
−100
nAdc
Emitter Cutoff Current
(VEB = −10 Vdc, IC = 0)
IEBO
—
−100
nAdc
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −100 μAdc, VBE = 0)
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1
Publication Order Number:
MPSW63/D
MPSW63 MPSW64
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Characteristic
Min
Max
5,000
10,000
—
—
10,000
20,000
—
—
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = −10 mAdc, VCE = −5.0 Vdc)
hFE
MPSW63
MPSW64
(IC = −100 mAdc, VCE = −5.0 Vdc)
—
MPSW63
MPSW64
Collector−Emitter Saturation Voltage
(IC = −100 mAdc, IB = −0.1 mAdc)
VCE(sat)
—
−1.5
Vdc
Base−Emitter On Voltage
(IC = −100 mAdc, VCE = −5.0 Vdc)
VBE(on)
—
−2.0
Vdc
fT
125
—
MHz
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product(2)
(IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT = |hfe| • ftest.
TYPICAL ELECTRICAL CHARACTERISTICS
h FE, DC CURRENT GAIN (X1.0 k)
200
TJ = 125°C
100
70
50
−10 V
25°C
30
VCE = −2.0 V
20
−5.0 V
10
7.0
5.0
3.0
2.0
−0.3
−55°C
−0.5
−0.7
−1.0
−2.0
−3.0
−5.0
−7.0
−10
−20
−30
−50
−70
−100
−200
−300
IC, COLLECTOR CURRENT (mA)
−2.0
TJ = 25°C
V, VOLTAGE (VOLTS)
−1.6
VBE(sat) @ IC/IB = 100
−1.2
−0.8
VBE(on) @ VCE = −5.0 V
VCE(sat) @ IC/IB = 1000
IC/IB = 100
−0.4
0
−0.3 −0.5 −1.0
−3.0 −5.0
−10
−30 −50 −100
−300
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
−2.0
TJ = 25°C
−1.8
−1.6
−50 mA −100 mA −175 mA
−1.4
−300 mA
−1.2
−1.0
−0.8
IC = −10 mA
−0.6
−0.1 −0.3
−1.0 −3.0
−10
−30
−100 −300 −1 k −3 k −10 k
IC, COLLECTOR CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 2. “ON” Voltage
Figure 3. Collector Saturation Region
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2
*APPLIES FOR IC/IB ≤ hFE/100
+3.0
+25°C TO +125°C
+2.0
+1.0
−50°C TO +25°C
0
−1.0
−2.0
*RqVC FOR VCE(sat)
−3.0
−4.0
−50°C TO +25°C
RqVB FOR VBE
−5.0
−0.3 −0.5 −1.0
20
15
C, CAPACITANCE (pF)
f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
+5.0
+4.0
10
+25°C TO +125°C
−2.0
−5.0
−10
−50 −100
−20
−300
VCE = −20 V
200
100
−10 V
60
−5.0 V
40
30
20
−0.3 −0.5 −1.0 −2.0
−5.0 −10
−20
−50 −100
−300
Figure 4. Temperature Coefficients
Figure 5. Current−Gain — Bandwidth Product
−2 k
Cibo
7.0
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−1 k
100 ms
1.0 mS
−500
TJ = 25°C
f = 1.0 MHz
1.0 s
−0.5
−1.0
−2.0
−5.0
−10
DUTY CYCLE ≤ 10%
−100
−1.5 −2.0
−20 −30
TC = 25°C
TA = 25°C
−200
3.0
2.0
−0.1 −0.2
TJ = 25°C
400
300
IC, COLLECTOR CURRENT (mA)
Cobo
5.0
600
IC, COLLECTOR CURRENT (mA)
IC , COLLECTOR CURRENT (mA)
R qV , TEMPERATURE COEFFICIENT (mV/ °C)
MPSW63 MPSW64
−5.0
−10
−20
VR, REVERSE VOLTAGE (VOLTS)
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance
Figure 7. Active Region, Safe Operating Area
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3
−30
MPSW63 MPSW64
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−10
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
F
SEATING
PLANE
L
K
X X
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
D
G
H
J
R
1 2 3
N C
SECTION X−X
N
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.021
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.135
−−−
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.457
0.533
0.407
0.482
1.15
1.39
2.42
2.66
0.46
0.61
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
3.43
−−−
YLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MPSW63/D
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