Rohm MMST2222A Npn medium power transistor (switching) Datasheet

UMT2222A / SST2222A / MMST2222A / PN2222A
Transistors
NPN Medium Power Transistor (Switching)
UMT2222A / SST2222A / MMST2222A / PN2222A
!External dimensions (Units : mm)
UMT2222A
2.0±0.2
0.9±0.1
1.3±0.1
0.65 0.65
(3)
ROHM : UMT3
EIAJ : SC-70
!Package, marking, and packaging specifications
UMT2222A
Packaging type
UMT3
R1P
SST3
R1P
SMT3
R1P
TO-92
−
T106
T116
T146
T93
3000
3000
3000
3000
Code
Basic ordering unit
(pieces)
2.1±0.1
2.9±0.2
SST2222A
PN2222A
0.45±0.1
(2)
(1)
0 ∼ 0.1
0.2Min.
(3)
+0.1
0.15 −0.06
0.4 +0.1
−0.05
All terminals have same dimensions
ROHM : SST3
2.9±0.2
MMST2222A
0.8±0.1
(2)
!Absolute maximum ratings (Ta = 25°C)
0 ∼ 0.1
2.8±0.2
0.2
1.6+
−0.1
(1)
Junction temperature
Storage temperature
75
40
6
0.6
V
V
V
A
VEBO
IC
0.2
W
Tj
0.35
0.625
150
W
W
°C
Tstg
−55 ∼ +150
°C
PC
+0.1
0.15 −0.06
0.4 +0.1
−0.05
All terminals have same dimensions
PN2222A
4.8±0.2
∗
3.7±0.2
0.5±0.1
∗ When mounted on a 7 x 5 x 0.6 mm ceramic board
ROHM : TO-92
EIAJ : SC-43
(1)
(2) (3)
+0.3
2.5 −
0.1
5
+0.15
0.45 −
0.05
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
BVCEO
75
40
−
−
−
−
V
V
IC =10µA
IC =10mA
Emitter-base breakdown voltage
Conditions
BVEBO
−
−
100
V
nA
IE =10µA
ICBO
6
−
−
Collector cutoff current
Emitter cutoff current
IEBO
−
−
100
nA
VEB = 3V
Collector-emitter saturation voltage
VCE(sat)
−
−
−
−
0.3
1
V
IC/IB =150mA/15mA
IC/IB =500mA/50mA
Base-emitter saturation voltage
VBE(sat)
0.6
V
IC/IB =150mA/15mA
IC/IB =500mA/50mA
DC current transfer ratio
Transition frequency
Output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
hFE
VCB = 60V
−
1.2
−
−
2
35
−
−
VCE =10V , IC =0.1mA
50
75
−
−
−
−
VCE =10V , IC =1mA
VCE =10V , IC =10mA
VCE =1V , IC =150mA
−
50
−
−
100
−
300
Cob
40
300
−
−
−
−
−
−
8
MHz
pF
Cib
−
−
25
pF
td
−
−
10
ns
tr
−
−
25
ns
fT
(1) Emitter
(2) Base
(3) Collector
2.5Min.
VCBO
VCEO
ROHM : SMT3
EIAJ : SC-59
4.8±0.2
UMT2222A,SST2222A,
MMST2222A
Collector power
SST2222A
dissipation
PN2222A
Unit
(12.7Min.)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Limits
0.3 ∼ 0.6
(3)
Symbol
(1) Emitter
(2) Base
(3) Collector
1.1+0.2
−0.1
1.9±0.2
0.95 0.95
Parameter
(1) Emitter
(2) Base
(3) Collector
0.95 +0.2
−0.1
1.9±0.2
0.95 0.95
0.2
1.3+
−0.1
Marking
SST2222A MMST2222A
0 ∼ 0.1
0.3+0.1
0.15±0.05
−0
All terminals have same dimensions
2.4±0.2
Part No.
0.7±0.1
0.2
(2)
1.25±0.1
(1)
0.1 ∼ 0.4
!Features
1) BVCEO > 40V (IC=10mA)
2) Complements the UMT2907A / SST2907A
/ MMST2907A / PN2907A.
tstg
−
−
225
ns
tf
−
−
60
ns
VCE =10V , IC =150mA
VCE =10V , IC =500mA
VCE =20V , IC =−20mA, f =100MHz
VCB =10V , f =100kHz
VEB =0.5V , f =100kHz
VCC =30V , VBE(OFF) =0.5V , IC =150mA , IB1 =15mA
VCC =30V , VBE(OFF) =0.5V , IC =150mA , IB1 =15mA
VCC =30V , IC =150mA , IB1 =−IB2 =15mA
VCC =30V , IC =150mA , IB1 =−IB2 =15mA
2.3
(1) Emitter
(2) Base
(3) Collector
UMT2222A / SST2222A / MMST2222A / PN2222A
Transistors
!Electrical characteristic curves
100
COLLECTOR CURRENT : Ic(mA)
Ta=25°C
1000
600
DC CURRENT GAIN : hFE
500
400
50
Ta=25°C
VCE=10V
100
300
200
1V
100
IB=0µA
10
0.1
0
0
10
5
COLLECTOR-EMITTER VOLTAGE : VCE(V)
1.0
COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat)(V)
Fig.1 Grounded emitter output
characteristics
10
COLLECTOR CURRENT : Ic(mA)
100
1000
Fig.3 DC current gain vs. collector current(Ι)
1000
Ta=25°C
IC / IB=10
VCE=10V
DC CURRENT GAIN : hFE
0.3
0.2
Ta=125°C
25°C
100
0.1
10
0.1
10
100
1000
COLLECTOR CURRENT : Ic(mA)
1.0
Fig.2 Collector-emitter saturation
voltage vs. collector current
AC CURRENT GAIN : hFE
Ta=25°C
VCE=10V
f=1kHz
100
1.0
10
COLLECTOR CURRENT : Ic(mA)
100
1000
Fig.4 DC current gain vs. collector current(ΙΙ)
1000
10
0.1
10
COLLECTOR CURRENT : Ic(mA)
100
Fig.5 AC current gain vs. collector current
1000
BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V)
0
1.0
−55°C
1.8
1.6
Ta=25°C
IC / IB=10
1.2
0.8
0.4
0
1.0
10
100
1000
COLLECTOR CURRENT : Ic(mA)
Fig.6 Base-emitter saturation
voltage vs. collector current
UMT2222A / SST2222A / MMST2222A / PN2222A
1.6
1000
Ta=25°C
IC / IB=10
1.2
0.4
VCC=30V
10V
10
1
10
1.0
10
100
1000
COLLECTOR CURRENT : Ic(mA)
Fig.7 Grounded emitter propagation
characteristics
1000
Fig.8 Turn-on time vs. collector
current
1000
Ta=25°C
VCC=30V
IC=10IB1=10IB2
FALL TIME : tf(ns)
STORAGE TIME : Ts(ns)
Ta=25°C
VCC=30V
IC=10IB1=10IB2
100
100
10
1.0
10
1.0
10
100
1000
COLLECTOR CURRENT : Ic(mA)
200MHz
10
1000
CURRENT GAIN-BANDWIDTH PRODUCT(MHz)
Ta=25°C
100MHz 250MHz 300MHz
10
100
1000
COLLECTOR CURRENT : Ic(mA)
Fig.11 Fall time vs. collector
current
Fig.10 Storage time vs. collector
current
100
Ta=25°C
VCE=10V
100
1
250MHz
0.1
1
10
100
1000
COLLECTOR CURRENT : Ic(mA)
Fig.13 Gain bandwidth product
5
1.0
10
100
1000
COLLECTOR CURRENT : Ic(mA)
10
1.0
10
100
1000
COLLECTOR CURRENT : Ic(mA)
Fig.14 Gain bandwidth product
vs. collector current
10
100
1000
COLLECTOR CURRENT : Ic(mA)
Fig.9 Rise time vs. collector
current
100
CAPACITANCE(pF)
0
COLLECTOR-EMITTER VOLTAGE : VCE(V)
Ta=25°C
VCC=30V
IC / IB=10
100
100
0.8
500
RISE TIME : tr(ns)
Ta=25°C
VCE=10V
1.8
TURN ON TIME : ton(ns)
BASE EMITTER VOLTAGE : VBE(ON)(V)
Transistors
Ta=25°C
f=1MHz
Cib
Cob
10
1
0.1
1.0
10
REVERSE BIAS VOLTAGE(V)
100
Fig.12 Input / output capacitance
vs. voltage
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