AMD AM29N323D

Am29N323D
Data Sheet
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Publication Number 23476N Revision B
Amendment +9 Issue Date August 8, 2002
Am29N323D
32 Megabit (2 M x 16-Bit)
CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
DISTINCTIVE CHARACTERISTICS
■ Single 1.8 volt read, program and erase (1.7 to
1.9 volt)
■ Multiplexed Data and Address for reduced I/O
count
— A0–A15 multiplexed as D0–D15
— Addresses are latched with AVD# control inputs
while CE# low
■ Simultaneous Read/Write operation
— Data can be continuously read from one bank
while executing erase/program functions in
other bank
— Zero latency between read and write operations
■ Read access times at 40 MHz
— Burst access times of 20 ns @ 30 pF
at industrial temperature range
— Asynchronous random access times
of 110 ns @ 30 pF
— Synchronous random access times
of 120 ns @ 30 pF
■ Burst length
— Continuous linear burst
■ Power dissipation (typical values, 8 bits
switching, CL = 30 pF)
— Burst Mode Read: 25 mA
— Simultaneous Operation: 40 mA
— Program/Erase: 15 mA
— Standby mode: 0.2 µA
■ Sector Architecture
■ Sector Protection
— Software command sector locking
— WP# protects the last two boot sectors
— All sectors locked when VPP = VIL
■ Software command set compatible with JEDEC
42.4 standards
— Backwards compatible with Am29F and
Am29LV families
■ Minimum 1 million erase cycle guarantee
per sector
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
■ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ Data# Polling and toggle bits
— Provides a software method of detecting
program and erase operation completion
■ Erase Suspend/Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■ Hardware reset input (RESET#)
— Hardware method to reset the device for reading
array data
— Eight 4 Kword sectors and sixty-three sectors of
32 Kwords each
■ CMOS compatible inputs, CMOS compatible
outputs
— Bank A contains the eight 4 Kword sectors and
fifteen 32 Kword sectors
■ Package Option
— Bank B contains forty-eight 32 Kword sectors
■ Low VCC write inhibit
— 47-ball FBGA
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 23476N Rev: B Amendment/+9
Issue Date: August 8, 2002
Refer to AMD’s Website (www.amd.com) for the latest information.
GENERAL DESCRIPTION
The Am29N323 is a 32 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode Flash memory device,
organized as 2,097,152 words of 16 bits each. This
device uses a single VCC of 1.7 to 1.9 V to read, program, and erase the memory array. A 12.0-volt VPP
may be used for faster program performance if desired.
The device can also be programmed in standard
EPROM programmers.
The Am29N323 provides a burst access of 20 ns at 30
pF with initial access times of 120 ns at 30 pF. The
device operates within the industrial temperature range
of –25°C to +85°C. The device is offered in the 47-ball
FBGA package.
Simultaneous Read/Write Operations with
Zero Latency
The Simultaneous Read/Write architecture provides
simultaneous operation by dividing the memory
space into two banks. The device can improve overall
system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from the other bank, with zero
latency. This releases the system from waiting for the
completion of program or erase operations.
The device is divided as shown in the following table:
Bank A Sectors
Quantity
Size
8
4 Kwords
15
32 Kwords
8 Mbits total
Bank B Sectors
Quantity
Size
48
32 Kwords
24 Mbits total
The device uses Chip Enable (CE#), Write Enable
(WE#), Address Valid (AVD#) and Output Enable
(OE#) to control asynchronous read and write opera-
2
tions. For burst operations, the device additionally
requires Power Saving (PS), Ready (RDY), and Clock
(CLK). This implementation allows easy interface with
minimal glue logic to microprocessors/microcontrollers
for high performance read operations.
The device offers complete compatibility with the
JEDEC 42.4 single-power-supply Flash command
set standard. Commands are written to the command
register using standard microprocessor write timings.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
The host system can detect whether a program or
erase operation is complete by using the device status bit DQ7 (Data# Polling) and DQ6/DQ2 (toggle
bits). After a program or erase cycle has been completed, the device automatically returns to reading
array data.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
VCC detector that automatically inhibits write operations during power transitions. The device also offers
three types of data protection at the sector level. The
sector lock/unlock command sequence disables or
re-enables both program and erase operations in any
sector. When at VIL, WP# locks the two outermost sectors. Finally, when VPP is at VIL, all sectors are locked.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the
standby mode. Power consumption is greatly reduced in both modes.
Am29N323D
August 8, 2002
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram of
Simultaneous Operation Circuit . . . . . . . . . . . . . . 5
Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . . 6
Special Handling Instructions for FBGA Package .................... 6
Input/Output Descriptions . . . . . . . . . . . . . . . . . . . 7
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 8
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 9
Table 1. Device Bus Operations ......................................................9
Requirements for Asynchronous Read Operation (Non-Burst) 9
Requirements for Synchronous (Burst) Read Operation .......... 9
Programmable Wait State ...................................................... 10
Power Saving Function ........................................................... 10
Simultaneous Read/Write Operations with Zero Latency ....... 10
Writing Commands/Command Sequences ............................ 10
Accelerated Program Operation ............................................. 11
Autoselect Functions .............................................................. 11
Automatic Sleep Mode ........................................................... 11
RESET#: Hardware Reset Input ............................................. 11
Output Disable Mode .............................................................. 11
Hardware Data Protection ...................................................... 11
Low VCC Write Inhibit ............................................................ 12
Write Pulse “Glitch” Protection ............................................... 12
Logical Inhibit .......................................................................... 12
Table 2. Sector Address Table ........................................................13
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 15
Reading Array Data ................................................................ 15
Set Wait State Command Sequence ...................................... 15
Table 3. Third Cycle Address/Data .................................................15
Enable PS (Power Saving) Mode Command Sequence ........ 15
Sector Lock/Unlock Command Sequence .............................. 15
Reset Command ..................................................................... 15
Autoselect Command Sequence ............................................ 16
Program Command Sequence ............................................... 16
Unlock Bypass Command Sequence ..................................... 16
Figure 1. Program Operation .......................................................... 17
Chip Erase Command Sequence ........................................... 18
Sector Erase Command Sequence ........................................ 18
Erase Suspend/Erase Resume Commands ........................... 19
Figure 2. Erase Operation............................................................... 19
Table 4. Command Definitions .......................................................20
Write Operation Status . . . . . . . . . . . . . . . . . . . . . 21
DQ7: Data# Polling ................................................................. 21
Figure 3. Data# Polling Algorithm ................................................... 21
DQ6: Toggle Bit I .................................................................... 22
Figure 4. Toggle Bit Algorithm......................................................... 22
August 8, 2002
DQ2: Toggle Bit II ................................................................... 23
Table 5. DQ6 and DQ2 Indications ................................................ 23
Reading Toggle Bits DQ6/DQ2 ............................................... 23
DQ5: Exceeded Timing Limits ................................................ 23
DQ3: Sector Erase Timer ....................................................... 24
Table 6. Write Operation Status ..................................................... 24
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 25
Figure 5. Maximum Negative Overshoot Waveform ...................... 25
Figure 6. Maximum Positive Overshoot Waveform........................ 25
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 25
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 26
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7. Test Setup....................................................................... 27
Table 7. Test Specifications ........................................................... 27
Key to Switching Waveforms. . . . . . . . . . . . . . . . 27
Switching Waveforms. . . . . . . . . . . . . . . . . . . . . . 27
Figure 8. Input Waveforms and Measurement Levels ................... 27
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 28
Synchronous/Burst Read ........................................................ 28
Figure 9. Burst Mode Read ............................................................ 28
Asynchronous Read ............................................................... 29
Figure 10. Asynchronous Mode Read............................................ 29
Figure 11. Reset Timings............................................................... 30
Erase/Program Operations ..................................................... 31
Figure 12. Program Operation Timings..........................................
Figure 13. Chip/Sector Erase Operations ......................................
Figure 14. Accelerated Unlock Bypass Programming Timing........
Figure 15. Data# Polling Timings (During Embedded Algorithm) ..
Figure 16. Toggle Bit Timings (During Embedded Algorithm)........
Figure 17. Latency with Boundary Crossing ..................................
Figure 18. Initial Access with Power Saving (PS)
Function and Address Boundary Latency ......................................
Figure 19. Initial Access with Address Boundary Latency .............
Figure 20. Example of Five Wait States Insertion ..........................
Figure 21. Back-to-Back Read/Write Cycle Timings ......................
32
33
34
35
35
36
37
38
39
40
Erase and Programming Performance . . . . . . . 41
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Physical Dimensions* . . . . . . . . . . . . . . . . . . . . . 42
FDD047—47-Pin Fine-Pitch Ball Grid Array
(FBGA) 7 x 10 mm package ................................................... 42
Mask Set Revision . . . . . . . . . . . . . . . . . . . . . . . . 44
Appendix A: Daisy Chain Information . . . . . . . . 45
Table 8. Daisy Chain Part for 32Mbit 0.23 µm Flash Products
(FDD047, 7 x 10 mm) ..................................................................... 45
Table 9. FDD047 Package Information .......................................... 45
Table 10. FDD047 Connections ..................................................... 45
Figure 1. FDD047 Daisy Chain Layout
(Top View, Balls Facing Down) ...................................................... 45
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 46
Am29N323D
3
PRODUCT SELECTOR GUIDE
Am29N323D
Synchronous/Burst
Part Number
11A
(40 MHz)
Speed Option
VCC = 1.7 – 1.9 V
Asynchronous
Speed Option
11A
Max Initial Access Time, ns (tIACC)
120
Max Access Time, ns (tACC)
110
Max Burst Access Time, ns (tBACC)
20
Max CE# Access, ns (tCE)
110
Max OE# Access, ns (tOE)
20
Max OE# Access, ns (tOE)
35
BLOCK DIAGRAM
VCC
VSS
PS
A/DQ0–A/DQ15
RDY
Buffer
PS Buffer
RDY
Erase Voltage
Generator
WE#
RESET#
VPP
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
VCC
Detector
CLK
Burst
State
Control
Address Latch
CE#
OE#
AVD#
Input/Output
Buffers
Timer
Burst
Address
Counter
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
A0–A20
A/DQ0–A/DQ15
A16–A20
4
Am29N323D
August 8, 2002
BLOCK DIAGRAM OF
SIMULTANEOUS OPERATION CIRCUIT
Upper Bank
16/32#
X-Decoder
A0–A20
RESET#
WE#
CE#
ADV#
WP#
DQ0–DQ15
A0–A20
Y-Decoder
Upper Bank Address
A0–A20
Latches and Control Logic
OE#
VCC
VSS
STATE
CONTROL
&
COMMAND
REGISTER
Status
DQ0–DQ15
RDY
Control
PS
Lower Bank Address
Lower Bank
Latches and
Control Logic
A0–A20
Y-Decoder
A0–A20
X-Decoder
DQ0–DQ15
DQ0–DQ15
Note: A0–A15 are multiplexed with DQ0–DQ15.
August 8, 2002
Am29N323D
5
CONNECTION DIAGRAM
47-Ball FBGA
Top View, Balls Facing Down
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
RDY
NC
GND
CLK
VCC
WE#
VPP
A19
A17
NC
B5
B6
B7
B1
B2
B3
B4
VCC
A16
A20
AVD#
C1
C2
C3
C4
B8
B9
B10
PS RESET# WP#
A18
CE#
GND
C5
C8
C9
C10
C6
C7
GND A/DQ7 A/DQ6 A/DQ13 A/DQ12 A/DQ3 A/DQ2 A/DQ9 A/DQ8 OE#
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
A/DQ15 A/DQ14 GND A/DQ5 A/DQ4 A/DQ11 A/DQ10 VCC A/DQ1 A/DQ0
Special Handling Instructions for FBGA
Package
Special handling is required for Flash Memory products
in FBGA packages.
6
Flash memory devices in FBGA packages may be
damaged if exposed to ultrasonic cleaning methods.
The package and/or data integrity may be
compromised if the package body is exposed to
temperatures above 150°C for prolonged periods of
time.
Am29N323D
August 8, 2002
INPUT/OUTPUT DESCRIPTIONS
A16–A20
=
Address Inputs
A/DQ0–
A/DQ15
=
Multiplexed Address/Data input/output
CE#
=
Chip Enable Input. Asynchronous
relative to CLK for the Burst mode.
OE#
=
Output Enable Input. Asynchronous
relative to CLK for the Burst mode.
WE#
=
Write Enable Input.
VCC
=
Device Power Supply (1.7 V–1.9 V).
VSS
=
Ground
NC
=
No Connect; not connected internally
RDY
=
Ready output; indicates the status of
the Burst read. Low = data not valid at
expected time. High = data valid.
CLK
=
The first rising edge of CLK in
conjunction with AVD# low latches
address input and activates burst
mode operation. After the initial word
is output, subsequent rising edges of
CLK increment the internal address
counter. CLK should remain low
during asynchronous access.
AVD#
=
PS
Power Saving input/output
During a read operation, PS indicates
whether or not the data on the outputs
are inverted. Low = data not inverted;
High = data inverted
RESET#
=
Hardware reset input. Low = device
resets and returns to reading array
data. RESET# must be low during
device power up.
WP#
=
Hardware write protect input. Low =
disables writes to SA70 and SA71
VPP
=
At 12 V, accelerates programming;
automatically places device in unlock
bypass mode. At VIL, disables
program and erase functions. Should
be at VIH for all other conditions.
LOGIC SYMBOL
5
Address Valid input. Indicates to
device that the valid address is
present on the address inputs
(address bits A0–A15 are multiplexed,
address bits A16–A20 are address
only).
Low = for asynchronous mode,
indicates valid address; for burst
mode, causes starting address to be
latched on rising edge of CLK.
High = device ignores address inputs
August 8, 2002
=
Am29N323D
A16–A20
16
A/DQ0–
A/DQ15
CLK
CE#
OE#
WE#
PS
RESET#
AVD#
RDY
7
ORDERING INFORMATION
The order number (Valid Combination) is formed by the following:
Am29N323D
T
11
A
WK
I
TEMPERATURE RANGE
I
= Industrial (–25°C to +85°C)
PACKAGE TYPE
WK
= 47-Ball Fine-Pitch Grid Array (FBGA)
0.50 mm pitch, 7 x 10 mm package (FDD047)
CLOCK RATE
A
= 40 MHz
SPEED
See Product Selector Guide and Valid Combination
BOOT CODE SECTOR ARCHITECTURE
T
=
Top sector
DEVICE NUMBER/DESCRIPTION
Am29N323D
32 Megabit (2 M x 16-Bit) CMOS Flash Memory, Simultaneous Read/Write, Burst Mode Flash Memory
1.8 Volt-only Read, Program, and Erase
Valid Combinations
Valid Combinations
Valid Combination configuration planned to be supported for this
device.
Order Number
Package Marking
Am29N323DT11AWKI
N323DT11AVI
Note: For daisy chain order part number, refer to see
“Appendix A: Daisy Chain Information” on page 45.
8
Am29N323D
August 8, 2002
DEVICE BUS OPERATIONS
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register itself
does not occupy any addressable memory location.
The register is composed of latches that store the commands, along with the address and data information
needed to execute the command. The contents of the
Table 1.
Operation
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
Device Bus Operations
CE#
OE#
WE#
A16–20
A/DQ0–15 RESET#
CLK
AVD#
Asynchronous Read
L
L
H
Addr In
I/O
H
L
Write
L
H
L
Addr In
I/O
H
L
Standby (CE#)
H
X
X
HIGH Z
HIGH Z
H
X
X
Hardware Reset
X
X
X
HIGH Z
HIGH Z
L
X
X
Load Starting Burst Address
L
H
H
Addr In
I/O
H
Advance Burst to next address with appropriate
Data presented on the Data Bus
L
L
H
HIGH Z
Burst
Data Out
H
H
Terminate current Burst read cycle
H
X
H
HIGH Z
HIGH Z
H
X
Terminate current Burst read cycle via RESET#
X
X
H
HIGH Z
HIGH Z
L
Terminate current Burst read cycle and start new
Burst read cycle
L
H
H
HIGH Z
I/O
H
Burst Read Operations
X
X
Legend: L = Logic 0, H = Logic 1, X = Don’t Care.
Requirements for Asynchronous
Read Operation (Non-Burst)
ensures that no spurious alteration of the memory
content occurs during the power transition.
To read data from the memory array, the system must
first assert a valid address on A/DQ0–A/DQ15 and
A16–A20, while driving AVD# and CE# to V IL. WE#
should remain at VIH. Note that CLK must remain low
for asynchronous read operations. The rising edge of
AVD# latches the address, after which the system can
drive OE# to VIL. The data will appear on
A/DQ0–A/DQ15. Since the memory array is divided
into two banks, each bank remains enabled for read
access until the command register contents are
altered.
Requirements for Synchronous (Burst)
Read Operation
Address access time (tACC) is equal to the delay from
stable addresses to valid output data. The chip enable
access time (t C E ) is the delay from the stable
addresses and stable CE# to valid data at the outputs.
The output enable access time (tOE) is the delay from
the falling edge of OE# to valid data at the output.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
August 8, 2002
The device is capable of continuous, sequential (linear)
burst operation. However, when the device first powers
up, it is enabled for asynchronous read operation. The
device will automatically be enabled for burst mode on
the first rising edge on the CLK input, while AVD# is
held low for one clock cycle. Prior to activating the clock
signal, the system should determine how many wait
states are desired for the initial word (tIACC) of each
burst session. The system would then write the Set
Wait Count command sequence (see “Programmable
Wait State”). The system may optionally activate the
PS mode (see “Power Saving Function”) by writing the
Enable PS Mode command sequence at this time, but
note that the PS mode can only be disabled by a hardware reset. (See “Command Definitions” for further
details).
The initial word is output tIACC after the rising edge of
the first CLK cycle. Subsequent words are output tBACC
Am29N323D
9
after the rising edge of each successive clock cycle,
which automatically increments the internal address
counter. Note that the device has a fixed internal
address boundary that occurs every 64 words,
starting at address 00000h. During the time the
device is outputting the 64th word (address 0003Fh,
0007Fh, 000BFh, etc.), a one cycle latency occurs
before data appears for the next address (address
00040h, 00080h, 000C0h, etc.). The RDY output indicates this condition to the system by pulsing low. See
Figure 17.
The device will continue to output sequential burst
data, wrapping around to address 00000h after it
reaches the highest addressable memory location,
until the system asserts CE# high, RESET# low, or
AVD# low in conjunction with a new address. See Table
1. The reset command does not terminate the burst
read operation.
If the host system crosses the bank boundary while
reading in burst mode, and the device is not programming or erasing, a one cycle latency will occur as
described above. If the host system crosses the bank
boundary while the device is programming or erasing,
the device will provide asynchronous read status information. The clock will be ignored. After the host has
completed status reads, or the device has completed
the program or erase operation, the host can restart a
burst operation using a new address and AVD# pulse.
If the clock frequency is less than 6 MHz during a burst
mode operation, additional latencies will occur. RDY
indicates the length of the latency by pulsing low.
Programmable Wait State
The programmable wait state feature indicates to the
device the number of additional clock cycles that must
elapse after AVD# is driven active before data will be
available. Upon power up, the device defaults to the
maximum of seven total cycles. The total number of
wait states is programmable from four to seven cycles.
See Figure 20.
Power Saving Function
The Power Save function reduces the amount of
switching on the data output bus by changing the
minimum number of bits possible, thereby reducing
power consumption. This function is active only during
burst mode operations.
The device compares the word previously output to the
system with the new word to be output. If the number
of bits to be switched is 0–8 (less than half the bus
width), the device simply outputs the new word on the
data bus. If, however, the number of bits that must be
switched is 9 or higher, the data is inverted before
being output on the data bus. This effectively limits the
maximum number of bits that are switched for any
given read cycle to eight. The device indicates to the
10
system whether or not the data is inverted via the PS
(power saving) output. If the word on the data bus is not
inverted, PS = V OL ; if the word on the data bus is
inverted, PS = VOH.
During initial power up the PS function is disabled. To
enable the PS function, the system must write the
Enable PS command sequence to the flash device
(see the Command Definitions table).
When the PS function is enabled, one additional clock
cycle is inserted during the initial and second access of
a burst sequence. See Figure 18. The RDY output indicates this condition to the system.
The device is also capable of receiving inverted data
during program operations. The host system must indicate to the device via the PS input whether or not the
program data are inverted. PS must be driven to VIH for
inverted data, or to VIL for non-inverted data.
To disable the PS function, the system must hardware
reset the device (drive the RESET# input low).
Simultaneous Read/Write Operations with
Zero Latency
This device is capable of reading data from one bank
of memory while programming or erasing in the other
bank of memory. An erase operation may also be suspended to read from or program to another location
within the same bank (except the sector being
erased). Figure 21 shows how read and write cycles
may be initiated for simultaneous operation with zero
latency. Refer to the DC Characteristics table for
read-while-program and read-while-erase current
specifications.
Writing Commands/Command Sequences
The device has inputs/outputs that accept both address and data information. To write a command or
command sequence (which includes programming
data to the device and erasing sectors of memory), the
system must drive CLK, AVD# and CE# to VIL, and
OE# to VIH when providing an address to the device,
and drive CLK, WE# and CE# to VIL, and OE# to VIH.
when writing commands or data.
The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the
Unlock Bypass mode, only two write cycles are required to program a word, instead of four.
An erase operation can erase one sector, multiple sectors, or the entire device. Table 2 indicates the address
space that each sector occupies. The device address
space is divided into two banks: Bank A contains the
boot/parameter sectors, and Bank B contains the
larger, code sectors of uniform size. A “bank address”
is the address bits required to uniquely select a bank.
Similarly, a “sector address” is the address bits required to uniquely select a sector.
Am29N323D
August 8, 2002
ICC2 in the DC Characteristics table represents the active current specification for the write mode. The AC
Characteristics section contains timing specification
tables and timing diagrams for write operations.
Accelerated Program Operation
The device offers accelerated program operations
through V PP. This function is primarily intended to
allow faster manufacturing throughput at the factory. If
the system asserts VID on this input, the device automatically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sectors,
and uses the higher voltage on the input to reduce the
time required for program operations. The system
would use a two-cycle program command sequence
as required by the Unlock Bypass mode. Removing
VID from the VPP input returns the device to normal
operation.
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in
this mode. Refer to the Autoselect Functions and Autoselect Command Sequence sections for more
information.
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# inputs are both held at VCC ± 0.2 V.
The device requires standard access time (t CE) for
read access when the device is in either of these
standby modes, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
ICC3 in the DC Characteristics table represents the
standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for tACC +
60 ns. The automatic sleep mode is independent of
the CE#, WE#, and OE# control signals. Standard addr es s a c ce ss ti mi ngs pr ov i de ne w dat a whe n
addresses are changed. While in sleep mode, output
data is latched and always available to the system.
August 8, 2002
I CC4 in the DC Characteristics table represents the
automatic sleep mode current specification.
RESET#: Hardware Reset Input
The RESET# input provides a hardware method of resetting the device to reading array data. When
RESET# is driven low for at least a period of tRP, the
device immediately terminates any operation in
progress, tristates all outputs, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state machine to reading array data. The operation that was
interrupted should be reinitiated once the device is
ready to accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS±0.2 V, the device
draws CMOS standby current (I CC4). If RESET# is
held at VIL but not within VSS±0.2 V, the standby current will be greater.
RESET# may be tied to the system reset circuitry. A
system reset would thus also reset the Flash memory,
enabling the system to read the boot-up firmware from
the Flash memory. Note that RESET# must be asser ted low dur ing devi ce power- up for proper
operation.
If RESET# is asserted during a program or erase operation, the device requires a time of tREADY (during
Embedded Algorithms) before the device is ready to
read data again. If RESET# is asserted when a program or erase operation is not executing, the reset
operation is completed within a time of t READY (not
during Embedded Algorithms). The system can read
data tRH after RESET# returns to VIH.
Refer to the AC Characteristics tables for RESET# parameters and to Figure 11 for the timing diagram.
Output Disable Mode
When the OE# input is at VIH, output from the device
is disabled. The outputs are placed in the high
impedance state.
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 4 for command definitions).
The device offers three types of data protection at the
sector level:
■ The sector lock/unlock command sequence disables or re-enables both program and erase operations in any sector.
Am29N323D
11
■ When WP# is at VIL, the two outermost sectors are
locked.
■ When VPP is at VIL, all sectors are locked.
The following hardware data protection measures prevent accidental erasure or programming, which might
otherwise be caused by spurious system level signals
during VCC power-up and power-down transitions, or
from system noise.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
Logical Inhibit
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets to reading array data. Subse-
12
quent writes are ignored until V CC is greater than
VLKO. The system must provide the proper signals to
the control inputs to prevent unintentional writes when
VCC is greater than VLKO.
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Am29N323D
August 8, 2002
Bank B
Table 2. Sector Address Table
August 8, 2002
Sector
Sector Size
(x16) Address Range
SA0
32 Kwords
00000h—07FFFh
SA1
32 Kwords
08000h—0FFFFh
SA2
32 Kwords
10000h—17FFFh
SA3
32 Kwords
18000h—1FFFFh
SA4
32 Kwords
20000h—27FFFh
SA5
32 Kwords
28000h—2FFFFh
SA6
32 Kwords
30000h—37FFFh
SA7
32 Kwords
38000h—3FFFFh
SA8
32 Kwords
40000h—47FFFh
SA9
32 Kwords
48000h—4FFFFh
SA10
32 Kwords
50000h—57FFFh
SA11
32 Kwords
58000h—5FFFFh
SA12
32 Kwords
60000h—67FFFh
SA13
32 Kwords
68000h—6FFFFh
SA14
32 Kwords
70000h—77FFFh
SA15
32 Kwords
78000h—7FFFFh
SA16
32 Kwords
80000h—87FFFh
SA17
32 Kwords
88000h—8FFFFh
SA18
32 Kwords
90000h—97FFFh
SA19
32 Kwords
98000h—9FFFFh
SA20
32 Kwords
A0000h—A7FFFh
SA21
32 Kwords
A8000h—AFFFFh
SA22
32 Kwords
B0000h—B7FFFh
SA23
32 Kwords
B8000h—BFFFFh
SA24
32 Kwords
C0000h—C7FFFh
SA25
32 Kwords
C8000h—CFFFFh
SA26
32 Kwords
D0000h—D7FFFh
SA27
32 Kwords
D8000h—DFFFFh
SA28
32 Kwords
E0000h—E7FFFh
SA29
32 Kwords
E8000h—EFFFFh
SA30
32 Kwords
F0000h—F7FFFh
SA31
32 Kwords
F8000h—FFFFFh
SA32
32 Kwords
100000h—107FFFh
SA33
32 Kwords
108000h—10FFFFh
SA34
32 Kwords
110000h—117FFFh
SA35
32 Kwords
118000h—11FFFFh
SA36
32 Kwords
120000h—127FFFh
SA37
32 Kwords
128000h—12FFFFh
Am29N323D
13
Bank A
Bank B
Table 2. Sector Address Table (Continued)
14
Sector
Sector Size
(x16) Address Range
SA38
32 Kwords
130000h—137FFFh
SA39
32 Kwords
138000h—13FFFFh
SA40
32 Kwords
140000h—147FFFh
SA41
32 Kwords
148000h—14FFFFh
SA42
32 Kwords
150000h—157FFFh
SA43
32 Kwords
158000h—15FFFFh
SA44
32 Kwords
160000h—167FFFh
SA45
32 Kwords
168000h—16FFFFh
SA46
32 Kwords
170000h—177FFFh
SA47
32 Kwords
178000h—17FFFFh
SA48
32 Kwords
180000h—187FFFh
SA49
32 Kwords
188000h—18FFFFh
SA50
32 Kwords
190000h—197FFFh
SA51
32 Kwords
198000h—19FFFFh
SA52
32 Kwords
1A0000h—1A7FFFh
SA53
32 Kwords
1A8000h—1AFFFFh
SA54
32 Kwords
1B0000h—1B7FFFh
SA55
32 Kwords
1B8000h—1BFFFFh
SA56
32 Kwords
1C0000h—1C7FFFh
SA57
32 Kwords
1C8000h—1CFFFFh
SA58
32 Kwords
1D0000h—1D7FFFh
SA59
32 Kwords
1D8000h—1DFFFFh
SA60
32 Kwords
1E0000h—1E7FFFh
SA61
32 Kwords
1E8000h—1EFFFFh
SA62
32 Kwords
1F0000h—1F7FFFh
SA64
4 Kwords
1F8000h—1F8FFFh
SA65
4 Kwords
1F9000h—1F9FFFh
SA66
4 Kwords
1FA000h—1FAFFFh
SA67
4 Kwords
1FB000h—1FBFFFh
SA68
4 Kwords
1FC000h—1FCFFFh
SA69
4 Kwords
1FD000h—1FDFFFh
SA70
4 Kwords
1FE000h—1FEFFFh
SA71
4 Kwords
1FF000h—1FFFFFh
Am29N323D
August 8, 2002
COMMAND DEFINITIONS
Writing specific address and data commands or
sequences into the command register initiates device
operations. Table 4 defines the valid register command
sequences. Writing incorrect address and data
values or writing them in the improper sequence
resets the device to reading array data.
All addresses are latched on the rising edge of AVD#.
All data is latched on the rising edge of WE#. Refer to
the AC Characteristics section for timing diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data in asynchronous mode. Each bank is
rea dy to r ead ar ray data after c ompl eting a n
Embedded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command,
the corresponding bank enters the erase-suspend-read mode, after which the system can read data
from any non-erase-suspended sector within the same
bank. After completing a programming operation in the
Erase Suspend mode, the system may once again
read array data with the same exception. See the
Erase Suspend/Erase Resume Commands section for
more information.
The system must issue the reset command to return a
bank to the read (or erase-suspend-read) mode if DQ5
goes high during an active program or erase operation,
or if the bank is in the autoselect mode. See the next
section, Reset Command, for more information.
See also Requirements for Asynchronous
Read Operation (Non-Burst) and Requirements for
Synchronous (Burst) Read Operation in the Device
Bus Operations section for more information. The
Asynchronous Read and Synchronous/Burst Read
tables provide the read parameters, and Figures 9 and
10 show the timings.
Set Wait State Command Sequence
The wait state command sequence instructs the device
to set a particular number of clock cycles for the initial
access in burst mode. The number of wait states that
should be programmed into the device is directly
related to the clock frequency. The first two cycles of
the command sequence are for unlock purposes. On
the third cycle, the system should write C0h to the
address associated with the intended wait state setting
(see Table 3). Address bits A12 and A13 determine the
setting.
Table 3.
Third Cycle Address/Data
Address
Total Wait State Cycles
000555h
4
001555h
5
002555h
6
003555h
7
Data
C0h
Upon power up, the device defaults to the maximum
seven cycle wait state setting (see Figure 20). It is recommended that the wait state command sequence be
written, even if the default wait state value is desired, to
ensure the device is set as expected. A hardware reset
will set the wait state to the default setting.
Enable PS (Power Saving) Mode
Command Sequence
The Enable PS (Power Saving) Mode command
sequence is required to set the device to the PS mode.
On power up, the Power Saving mode is disabled. The
command sequence consists of two unlock cycles followed by a command cycle in which the address and
data should 555h/70h, respectively. The PS mode
remains enabled until the device is hardware reset
(either device is powered down or RESET# is asserted
low).
Sector Lock/Unlock Command Sequence
The sector lock/unlock command sequence allows the
system to determine which sectors are protected from
accidental writes. When the device is first powered up,
all sectors are locked. To unlock a sector, the system
must write the sector lock/unlock command sequence.
Two cycles are first written: addresses are don’t care
and data is 60h. During the third cycle, the sector
address (SLA) and unlock command (60h) is written,
while specifying with address A6 whether that sector
should be locked (A6 = VIL) or unlocked (A6 = VIH).
After the third cycle, the system can continue to lock or
unlock additional cycles, or exit the sequence by
writing F0h (reset command).
Note that the last two outermost boot sectors can be
locked by taking the WP# signal to VIL. Also, if VPP is
at VIL all sectors are locked; if the VPP input is at VPP,
all sectors are unlocked.
Reset Command
Writing the reset command resets the banks to the read
or erase-suspend-read mode. Address bits are don’t
cares for this command.
The reset command may be written between the
sequence cycles in an erase command sequence
before erasing begins. This resets the bank to which
August 8, 2002
Am29N323D
15
the system was writing to the read mode. Once erasure
begins, however, the device ignores reset commands
until the operation is complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the bank to
which the system was writing to the read mode. If the
program command sequence is written to a bank that
is in the Erase Suspend mode, writing the reset
command returns that bank to the erase-suspend-read
mode. Once programming begins, however, the device
ignores reset commands until the operation is complete.
The reset command may be written between the
sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command must
be written to return to the read mode. If a bank entered
the autoselect mode while in the Erase Suspend mode,
writing the reset command returns that bank to the
erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the banks to the
read mode (or erase-suspend-read mode if that bank
was in Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to read several identifier codes at specific
addresses:
When the Embedded Program algorithm is complete,
that bank then returns to the read mode and addresses
are no longer latched. The system can determine the
status of the program operation by monitoring DQ7 or
DQ6/DQ2. Refer to the Write Operation Status section
for information on these status bits.
Any commands written to the device during the
Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program
operation. The program command sequence should be
reinitiated once that bank has returned to the read
mode, to ensure data integrity.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from “0” back to a “1.” Attempting to do so may
cause that bank to set DQ5 = 1, or cause the DQ7 and
DQ6 status bit to indicate the operation was successful. However, a succeeding read will show that the
data is still “0.” Only erase operations can convert a “0”
to a “1.”
Identifier Code
Address
Unlock Bypass Command Sequence
Manufacturer ID
(BA)00h
Device ID
(BA)01h
The unlock bypass feature allows the system to
program to a bank faster than using the standard
program command sequence. The unlock bypass
command sequence is initiated by first writing two
unlock cycles. This is followed by a third write cycle
containing the unlock bypass command, 20h. That
bank then enters the unlock bypass mode. A two-cycle
unlock bypass program command sequence is all that
is required to program in this mode. The first cycle in
this sequence contains the unlock bypass program
command, A0h; the second cycle contains the program
address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial
two unlock cycles required in the standard program
command sequence, resulting in faster total programming time. The host system may also initiate the chip
erase and sector erase sequences in the unlock
bypass mode. The erase command sequences are
four cycles in length instead of six cycles. Table 4
shows the requirements for the command sequence.
Sector Protect Verify
(SA)02h
Revision ID
(BA)03h
Table 4 shows the address and data requirements. The
autoselect command sequence may be written to an
address within a bank that is either in the read or
erase-suspend-read mode. The autoselect command
may not be written while the device is actively programming or erasing in the other bank.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the bank address and the
autoselect command. The bank then enters the
autoselect mode. The system may read at any address
within the same bank any number of times without initiating another autoselect command sequence.
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the
bank was previously in Erase Suspend).
Program Command Sequence
Programming is a four-bus-cycle operation. The
program command sequence is initiated by writing two
16
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program
algorithm. The system is not required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verifies the
programmed cell margin. Table 4 shows the address
and data requirements for the program command
sequence.
During the unlock bypass mode, only the Unlock
Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset
command sequence. The first cycle must contain the
Am29N323D
August 8, 2002
bank address and the data 90h. The second cycle
need only contain the data 00h. The bank then returns
to the read mode.
START
The device offers accelerated program operations
through V PP. When the system asserts V ID on this
input, the device automatically enters the Unlock
Bypass mode. The system may then write the
two-cycle Unlock Bypass program command
sequence. The device uses the higher voltage on the
VPP input to accelerate the operation. Note that sectors
must be unlocked using the Sector Lock/Unlock
command sequence prior to raising VPP to VID.
Write Program
Command Sequence
Data Poll
from System
Embedded
Program
algorithm
in progress
Figure 1 illustrates the algorithm for the program operation. Refer to the Erase/Program Operations table in
the AC Characteristics section for parameters, and
Figure 12 for timing diagrams.
Verify Data?
No
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note: See Table 4 for program command sequence.
Figure 1.
August 8, 2002
Am29N323D
Program Operation
17
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings during these operations.
The host system may also initiate the chip erase
command sequence while the device is in the unlock
bypass mode. The command sequence is two cycles
cycles in length instead of six cycles. Table 4 shows the
address and data requirements for the chip erase
command sequence.
When the Embedded Erase algorithm is complete,
that bank returns to the read mode and addresses are
no longer latched. The system can determine the status of the erase operation by using DQ7 or DQ6/DQ2.
Refer to the Write Operation Status section for information on these status bits.
Any commands written during the chip erase operation
are ignored. However, note that a hardware reset
immediately terminates the erase operation. If that
occurs, the chip erase command sequence should be
reinitiated once that bank has returned to reading array
data, to ensure data integrity.
Figure 2 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations table in
the AC Characteristics section for parameters, and
Figure 13 section for timing diagrams.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two
additional unlock cycles are written, and are then followed by the address of the sector to be erased, and
the sector erase command. Table 4 shows the address
and data requirements for the sector erase command
sequence.
The device does not require the system to preprogram
prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or
timings during these operations.
After the command sequence is written, a sector erase
time-out of no less than 50 µs occurs. During the
18
time-out period, additional sector addresses and sector
erase commands may be written. Loading the sector
erase buffer may be done in any sequence, and the
number of sectors may be from one sector to all sectors. The time between these additional cycles must be
less than 50 µs, otherwise erasure may begin. Any
sector erase address and command following the
exceeded time-out may or may not be accepted. It is
recommended that processor interrupts be disabled
during this time to ensure all commands are accepted.
The interrupts can be re-enabled after the last Sector
Erase command is written. Any command other than
Sector Erase or Erase Suspend during the time-out
period resets that bank to the read mode. The
system must rewrite the command sequence and any
additional addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3:
Sector Erase Timer.). The time-out begins from the rising edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete, the
bank returns to reading array data and addresses are
no longer latched. While the Embedded Erase operation is in progress, the system can read data from the
non-erasing bank.
The system can determine the status of the erase operation by reading DQ7 or DQ6/ DQ2 in the erasing bank.
Note that the host system must wait 200 µs after the
last sector erase command to obtain status information
if the first status read is in a different bank than the last
sector selected for erasure. For example, if sector 0,
which is in bank B, was the last sector selected for erasure, and the host system requests its first status read
from sector 71, which is in bank A, then the device
requires 200 µs before status information will be available. Refer to the Write Operation Status section for
information on these status bits.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands
are ignored. However, note that a hardware reset
immediately terminates the erase operation. If that
occurs, the sector erase command sequence should
be reinitiated once that bank has returned to reading
array data, to ensure data integrity.
The host system may also initiate the sector erase
command sequence while the device is in the unlock
bypass mode. The command sequence is four cycles
cycles in length instead of six cycles.
Figure 2 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations table in
the AC Characteristics section for parameters, and
Figure 13 section for timing diagrams.
Am29N323D
August 8, 2002
Erase Suspend/Erase Resume
Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. The bank address is required when writing
this command. This command is valid only during the
sector erase operation, including the minimum 50 µs
time-out period during the sector erase command sequence. The Erase Suspend command is ignored if
written during the chip erase operation or Embedded
Program algorithm.
of the erase-suspended bank is required when writing
this command. Further writes of the Resume command
are ignored. Another Erase Suspend command can be
written after the chip has resumed erasing.
START
Write Erase
Command Sequence
When the Erase Suspend command is written during
the sector erase operation, the device requires a
maximum of 20 µs to suspend the erase operation.
However, when the Erase Suspend command is
written during the sector erase time-out, the device
immediately terminates the time-out period and suspends the erase operation.
After the erase operation has been suspended, the
bank enters the erase-suspend-read mode. The
system can read data from or program data to any
sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Reading at
any address within erase-suspended sectors produces
status information on DQ7–DQ0. The system can use
DQ7, or DQ6 and DQ2 together, to determine if a
sector is actively erasing or is erase-suspended. Refer
to the Write Operation Status section for information on
these status bits.
After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard program operation. Refer to the
Write Operation Status section for more information.
Data Poll
from System
No
Embedded
Erase
algorithm
in progress
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table 4 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
Figure 2. Erase Operation
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
Autoselect Functions and Autoselect Command
Sequence sections for details.
To resume the sector erase operation, the system must
write the Erase Resume command. The bank address
August 8, 2002
Am29N323D
19
Command Sequence
(Note 1)
Cycles
Table 4. Command Definitions
Bus Cycles (Notes 2–5)
First
Asynchronous Read (Note 6)
1
RA
RD
Reset (Note 7)
1
XXX
F0
Autoselect
(Note 8)
Second
Addr Data Addr Data
Third
Addr
Fourth
Data
Addr
Fifth
Data
Manufacturer ID
4
555
AA
2AA
55
(BA)555
90
(BA)X00
0001
Device ID
4
555
AA
2AA
55
(BA)555
90
(BA)X01
22D1
Addr
Sixth
Data Addr Data
Sector Lock Verify (Note 9)
4
555
AA
2AA
55
(SA)555
90
(SA)X02
00/01
Revision ID (Note 10)
4
555
AA
2AA
55
(SA)555
90
(BA)X03
00/21
Program
4
555
AA
2AA
55
555
A0
PA
Data
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program
2
XXX
A0
PA
PD
Unlock Bypass Sector Erase (Note 11)
2
XXX
80
SA
30
Unlock Bypass Chip Erase (Note 11)
2
XXX
80
XXX
10
Unlock Bypass Reset (Note 12)
2
BA
90
XXX
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Erase Suspend (Note 13)
1
BA
B0
Erase Resume (Note 14)
1
BA
30
Sector Lock/Unlock
3
XXX
60
XXX
60
SLA
60
Set Wait Count (Note 15)
3
555
AA
2AA
55
(WS)555
C0
Enable PS Mode
3
555
AA
2AA
55
555
70
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses
latch on the falling edge of the WE# or CE# pulse, whichever happens
later.
PD = Data to be programmed at location PA. Data latches on the rising
edge of WE# or CE# pulse, whichever happens first.
Notes:
1. See Table 1 for description of bus operations.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A20–A12 uniquely select any sector.
BA = Address of the bank (A20, A19) that is being switched to
autoselect mode, is in bypass mode, or is being erased.
SLA = Address of the sector to be locked. Set sector address (SA) and
either A6 = 1 for unlocked or A6 = 0 for locked.
WS = Number of wait states defined by A12, A13.
2.
All values are in hexadecimal.
11. The Unlock Bypass command is required prior to this command
sequence.
3.
Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
12. The Unlock Bypass Reset command is required to return to
reading array data when the bank is in the unlock bypass mode.
4.
Data bits DQ15–DQ8 are don’t care in command sequences,
except for RD and PD.
5.
Unless otherwise noted, address bits A20–A11 are don’t cares.
13. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation, and requires the bank address.
6.
No unlock or command cycles required when bank is reading
array data.
7.
The Reset command is required to return to reading array data
(or to the erase-suspend-read mode if previously in Erase
Suspend) when a bank is in the autoselect mode, or if DQ5 goes
high (while the bank is providing status information).
8.
The fourth cycle of the autoselect command sequence is a read
cycle. The system must provide the bank address. See the
Autoselect Command Sequence section for more information.
9.
The data is 0000h for an unlocked sector and 0001h for a locked
sector. All sectors are again locked upon hardware reset.
14. The Erase Resume command is valid only during the Erase
Suspend mode, and requires the bank address.
15. The addresses in the third cycle must contain, on A12 and A13,
the additional wait counts to be set. See “Set Wait State
Command Sequence”.
10. The data is 00h for devices that do not require additional latency
when burst address begins at an address boundary, and 21h for
devices that require additional latency when burst address begins
at an address boundary.
20
Am29N323D
August 8, 2002
WRITE OPERATION STATUS
The device provides several bits to determine the status of
a program or erase operation: DQ2, DQ3, DQ5, DQ6, and
DQ7. Table 6 and the following subsections describe the
function of these bits. DQ7 and DQ6 each offer a method
for determining whether a program or erase operation is
complete or in progress.
when the system samples the DQ7 output, it may read
the status or valid data. Even if the device has completed the program or erase operation and DQ7 has
valid data, the data outputs on DQ0–DQ6 may be still
invalid. Valid data on DQ0–DQ7 will appear on successive read cycles.
DQ7: Data# Polling
Table 6 shows the outputs for Data# Polling on DQ7.
Figure 3 shows the Data# Polling algorithm. Figure 15
in the AC Characteristics section shows the Data#
Polling timing diagram.
The Data# Polling bit, DQ7, indicates to the host
system whether an Embedded Program or Erase algorithm is in progress or completed, or whether a bank is
in Erase Suspend. Data# Polling is valid after the rising
edge of the final WE# pulse in the command sequence.
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the
Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for
approximately 1 µs, then that bank returns to the read
mode.
START
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the bank enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
The system must provide an address within any of the
sectors selected for erasure to read valid status information on DQ7. Note that the host system must wait
200 µs after the last sector erase command to obtain
status information if the first status read is in a different
bank than the last sector selected for erasure. For
example, if sector 0, which is in bank B, was the last
sector selected for erasure, and the host system
requests its first status read from sector 71, which is in
bank A, then the device requires 200 µs before status
information will be available.
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data#
Polling on DQ7 is active for approximately 100 µs, then
the bank returns to the read mode. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the
selected sectors that are protected. However, if the
system reads DQ7 at an address within a protected
sector, the status may not be valid.
Just prior to the completion of an Embedded Program
or Erase operation, DQ7 may change asynchronously
with DQ0–DQ6 while Output Enable (OE#) is asserted
low. That is, the device may change from providing
status information to valid data on DQ7. Depending on
August 8, 2002
Yes
No
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a valid
address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Am29N323D
Figure 3. Data# Polling Algorithm
21
RDY: Ready
The RDY is a dedicated output that indicates (when at
logic low) the system should wait 1 clock cycle before
expecting the next word of data.
RDY functions only while reading data in burst mode.
Three conditions may cause the RDY output to be low:
during the initial access (in burst mode) when PS is
enabled; after the boundary that occurs every 64 words
beginning at address 00000h; and when the clock frequency is less than 6 MHz (in which case RDY is low
every third clock).
command sequence is written, then returns to reading
array data.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded
Program algorithm is complete.
See the following for additional information: Figure 4
(toggle bit flowchart), DQ6: Toggle Bit I (description),
Figure 16 (toggle bit timing diagram), and Table 5
(compares DQ2 and DQ6).
DQ6: Toggle Bit I
START
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete,
or whether the device has entered the Erase Suspend
mode. Toggle Bit I may be read at any address in the
same bank, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
Read Byte
(DQ0-DQ7)
Address = VA
Read Byte
(DQ0-DQ7)
Address = VA
During an Embedded Program or Erase algorithm
operation, successive read cycles to any address
cause DQ6 to toggle. Note that OE# must be low during
toggle bit status reads. When the operation is complete, DQ6 stops toggling.
DQ6 = Toggle?
Yes
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6
toggles for approximately 100 µs, then returns to
reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the
unprotected sectors, and ignores the selected sectors
that are protected.
No
Read Byte Twice
(DQ 0-DQ7)
Adrdess = VA
DQ6 = Toggle?
No
Yes
FAIL
PASS
Note: The system should recheck the toggle bit even if DQ5
= “1” because the toggle bit may stop toggling as DQ5
changes to “1.” See the subsections on DQ6 and DQ2 for
more information.
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program
22
DQ5 = 1?
Yes
Note that the host system must wait 200 µs after the
last sector erase command to obtain status information
if the first status read is in a different bank than the last
sector selected for erasure. For example, if sector 0,
which is in bank B, was the last sector selected for erasure, and the host system requests its first status read
from sector 71, which is in bank A, then the device
requires 200 µs before status information will be available.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is
erase-suspended. When the device is actively erasing
(that is, the Embedded Erase algorithm is in progress),
DQ6 toggles. When the device enters the Erase
Suspend mode, DQ6 stops toggling. However, the
system must also use DQ2 to determine which sectors
are erasing or erase-suspended. Alternatively, the
system can use DQ7 (see the subsection on DQ7:
Data# Polling).
No
Am29N323D
Figure 4. Toggle Bit Algorithm
August 8, 2002
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for erasure. Note that OE# must be low during toggle bit
status reads. But DQ2 cannot distinguish whether the
Table 5.
sector is actively erasing or is erase-suspended. DQ6,
by comparison, indicates whether the device is actively
erasing, or is in Erase Suspend, but cannot distinguish
which sectors are selected for erasure. Thus, both
status bits are required for sector and mode information. Refer to Table 6 to compare outputs for DQ2 and
DQ6.
See the following for additional information: Figure 4
(toggle bit flowchart), DQ6: Toggle Bit I (description),
Figure 16 (toggle bit timing diagram), and Table 5
(compares DQ2 and DQ6).
DQ6 and DQ2 Indications
If device is
and the system reads
then DQ6
and DQ2
programming,
at any address,
toggles,
does not toggle.
at an address within a sector
selected for erasure,
toggles,
also toggles.
at an address within sectors not
selected for erasure,
toggles,
does not toggle.
at an address within a sector
selected for erasure,
does not toggle,
toggles.
at an address within sectors not
selected for erasure,
returns array data,
returns array data. The system can read
from any sector not selected for erasure.
at any address,
toggles,
is not applicable.
actively erasing,
erase suspended,
programming in
erase suspend
Reading Toggle Bits DQ6/DQ2
Refer to Figure 4 for the following discussion. Whenever the system initially begins reading toggle bit
status, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, the
system would note and store the value of the toggle bit
after the first read. After the second read, the system
would compare the new value of the toggle bit with the
first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can
read array data on DQ7–DQ0 on the following read
cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the
system also should note whether the value of DQ5 is
high (see the section on DQ5). If it is, the system
should then determine again whether the toggle bit is
toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the
program or erase operation. If it is still toggling, the
device did not completed the operation successfully,
August 8, 2002
and the system must write the reset command to return
to reading array data.
The remaining scenario is that the system initially
determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles,
determining the status as described in the previous
paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to
determine the status of the operation (top of Figure 4).
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1,” indicating that
the program or erase cycle was not successfully
completed.
The device may output a “1” on DQ5 if the system tries
to program a “1” to a location that was previously programmed to “0.” Only an erase operation can
change a “0” back to a “1.” Under this condition, the
Am29N323D
23
device halts the operation, and when the timing limit
has been exceeded, DQ5 produces a “1.”
See also the Sector Erase Command Sequence section.
Under both these conditions, the system must write
the reset command to return to the read mode (or to
the erase-suspend-read mode if a bank was previously in the erase-suspend-program mode).
After the sector erase command is written, the system
should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device has accepted
the command sequence, and then read DQ3. If DQ3 is
“1,” the Embedded Erase algorithm has begun; all
further commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0,” the
device will accept additional sector erase commands.
To ensure the command has been accepted, the
system software should check the status of DQ3 prior
to and following each subsequent sector erase command. If DQ3 is high on the second status check, the
last command might not have been accepted.
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not
erasure has begun. (The sector erase timer does not
apply to the chip erase command.) If additional sectors
are selected for erasure, the entire time-out also
applies after each additional sector erase command.
When the time-out period is complete, DQ3 switches
from a “0” to a “1.” If the time between additional sector
erase commands from the system can be assumed to
be less than 50 µs, the system need not monitor DQ3.
Table 6 shows the status of DQ3 relative to the other
status bits.
Table 6. Write Operation Status
Standard
Mode
Erase
Suspend
Mode
Status
Embedded Program Algorithm
Embedded Erase Algorithm
Erase
Erase-Suspend- Suspended Sector
Read (Note 4)
Non-Erase Suspended
Sector
Erase-Suspend-Program
DQ7
(Note 2)
DQ7#
0
DQ6
Toggle
Toggle
DQ5
(Note 1)
0
0
DQ3
N/A
1
DQ2
(Note 2)
No toggle
Toggle
1
No toggle
0
N/A
Toggle
Data
Data
Data
Data
Data
DQ7#
Toggle
0
N/A
N/A
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm
is in progress. The device outputs array data if the system addresses a non-busy bank.
4. The system may read either asynchronously or synchronously (burst) while in erase suspend. RDY will function exactly as in
non-erase-suspended mode.
24
Am29N323D
August 8, 2002
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C
Ambient Temperature
with Power Applied . . . . . . . . . . . . . –65°C to +125°C
Voltage with Respect to Ground,
All I/Os except VPP (Note 1). . . –0.5 V to VCC + 0.5 V
VCC (Note 1) . . . . . . . . . . . . . . . . . .–0.5 V to +2.5 V
20 ns
20 ns
+0.8 V
–0.5 V
–2.0 V
VPP (Note 2) . . . . . . . . . . . . . . . . .–0.5 V to +12.5 V
20 ns
Output Short Circuit Current (Note 3) . . . . . . 100 mA
Notes:
1. Minimum DC voltage on input or I/Os is –0.5 V. During
voltage transitions, input at I/Os may undershoot VSS to
–2.0 V for periods of up to 20 ns during voltage transitions
inputs might overshooot to VCC +0.5 V for periods up to
20 ns. See Figure 5. Maximum DC voltage on output and
I/Os is VCC + 0.5 V. During voltage transitions outputs
may overshoot to VCC + 2.0 V for periods up to 20 ns. See
Figure 6.
2. Minimum DC input voltage on VPP is –0.5 V. During
voltage transitions, VPP may overshoot VSS to –2.0 V for
periods of up to 20 ns. See Figure 5. Maximum DC input
voltage on VPP is +12.5 V which may overshoot to +13.5
V for periods up to 20 ns.
Figure 5. Maximum Negative
Overshoot Waveform
20 ns
VCC
+2.0 V
VCC
+0.5 V
1.0 V
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
4. Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not
implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.
20 ns
20 ns
Figure 6. Maximum Positive
Overshoot Waveform
OPERATING RANGES
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –25°C to +85°C
VCC Supply Voltages
VCCmin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1.7 V
VCCmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1.9 V
Operating ranges define those limits between which the functionality of the device is guaranteed.
August 8, 2002
Am29N323D
25
DC CHARACTERISTICS
CMOS Compatible
Parameter Description
Test Conditions (Note 1)
Min
Typ
Max
Unit
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCCmax
±1
µA
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCCmax
±1
µA
ICCB
VCC Active Burst Read Current
(Note 2)
CE# = VIL, OE# = VIL
25
30
mA
VCC Active Asynchronous Read
Current (Note 3)
5 MHz
10
16
mA
ICC1
CE# = VIL, OE# = VIH
1 MHz
2
4
mA
ICC2
VCC Active Write Current (Note 4)
CE# = VIL, OE# = VIH, VPP = VIH
15
40
mA
ICC3
VCC Standby Current (Note 5)
CE# = VIH, RESET# = VIH
0.2
10
µA
ICC4
VCC Reset Current
RESET# = VIL, CLK = VIL
0.2
10
µA
ICC5
VCC Active Current
(Read While Write)
CE# = VIL, OE# = VIL
40
60
mA
Accelerated Program Current
(Note 6)
CE# = VIL, OE# = VIH,
VPP = 12.0 ± 0.5 V
VPP
7
15
mA
IPP
VCC
5
10
mA
VIL
Input Low Voltage
–0.5
0.2
V
VIH
Input High Voltage
VCC – 0.2
VCC + 0.2
V
VOL
Output Low Voltage
IOL = 100 µA, VCC = VCC min
0.1
V
VOH
Output High Voltage
IOH = –100 µA, VCC = VCC min
VID
Voltage for Accelerated Program
11.5
12.5
V
Low VCC Lock-out Voltage
1.0
1.4
V
VLKO
VCC – 0.1
V
Note:
1. Maximum ICC specifications are tested with VCC = VCCmax.
2. Eight I/Os switching.
3. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
4. ICC active while Embedded Erase or Embedded Program is in progress.
5. Device enters automatic sleep mode when addresses are stable for tACC + 60 ns. Typical sleep mode current is equal to ICC3.
6. Total current during accelerated programming is the sum of VPP and VCC currents.
26
Am29N323D
August 8, 2002
TEST CONDITIONS
Table 7. Test Specifications
Device
Under
Test
Test Condition
11A
Unit
Output Load Capacitance, CL
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
0.0–VCC
V
Input timing measurement
reference levels
VCC/2
V
Output timing measurement
reference levels
VCC/2
V
Input Pulse Levels
CL
Figure 7. Test Setup
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
SWITCHING WAVEFORMS
VCC
Input
VCC/2
Measurement Level
VCC/2
Output
0.0 V
Figure 8.
August 8, 2002
Input Waveforms and Measurement Levels
Am29N323D
27
AC CHARACTERISTICS
Synchronous/Burst Read
Parameter
JEDEC
Description
Standard
11A
(40 MHz)
Unit
tIACC
Initial Access Time
Max
120
ns
tBACC
Burst Access Time Valid Clock to Output Delay
Max
20
ns
tAVDS
AVD# Setup Time to CLK
Min
5
ns
tAVDH
AVD# Hold Time from CLK
Min
7
ns
tAVDO
AVD# High to OE# Low
Min
0
ns
tACS
Address Setup Time to CLK
Min
5
ns
tACH
Address Hold Time from CLK
Min
7
ns
tBDH
Data Hold Time from Next Clock Cycle
Max
4
ns
tOE
Output Enable to Data, PS, or RDY Valid
Max
20
ns
tCEZ
Chip Enable to High Z
Max
10
ns
tOEZ
Output Enable to High Z
Max
10
ns
tCES
CE# Setup Time to CLK
Min
5
ns
tRDYS
RDY Setup Time to CLK
Min
5
ns
tRACC
Ready access time from CLK
Max
20
ns
5 cycles for initial access shown.
Programmable wait state function is set to 01h.
tCES
25 ns typ.
1 cycle
wait state
when PS
enabled
tCEZ
CE#
CLK
tAVDS
AVD#
tAVDO
tAVDS
tACS
A16:
A20
tBDH
Aa
tBACC
tACH
A/DQ0:
A/DQ15
Hi-Z
Aa
tIACC
Da
Da + 1
Da + 2
Da + n
tOEZ
OE#
tOE
RDY
tRACC
Hi-Z
Hi-Z
tRDYS
Notes:
1. Figure shows total number of wait states set to five cycles. The total number of wait states can be programmed from four
cycles to seven cycles.
2. Figure shows that PS (power saving mode) has been enabled; one additional wait state occurs during initial data Da. Latency
is not present if PS is not enabled.
3. If any burst address occurs at a 64-word boundary, one additional clock cycle is inserted, and is indicated by RDY.
Figure 9.
28
Burst Mode Read
Am29N323D
August 8, 2002
AC CHARACTERISTICS
Asynchronous Read
Parameter
JEDEC
Standard
Description
11A
Unit
tCE
Access Time from CE# Low
Max
110
ns
tACC
Asynchronous Access Time
Max
110
ns
tAVDP
AVD# Low Time
Min
12
ns
tAAVDS
Address Setup Time to Falling Edge of AVD
Min
5
ns
tAAVDH
Address Hold Time from Rising Edge of AVD
Min
7
ns
tOE
Output Enable to Output Valid
Max
35
ns
Read
Min
0
ns
tOEH
Output Enable Hold Time
Toggle and
Data# Polling
Min
10
ns
tOEZ
Output Enable to High Z (See Note)
Max
20
ns
Note: Not 100% tested.
CE#
tOE
OE#
tOEH
WE#
tCE
A/DQ0:
A/DQ15
tOEZ
RA
Valid RD
tACC
RA
A16-A21
tAAVDH
AVD#
tAAVDS
tAVDP
Note: RA = Read Address, RD = Read Data.
Figure 10. Asynchronous Mode Read
August 8, 2002
Am29N323D
29
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tReadyw
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (See Note)
Max
20
µs
tReady
RESET# Pin Low (NOT During Embedded
Algorithms) to Read Mode (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
Reset High Time Before Read (See Note)
Min
200
ns
tRPD
RESET# Low to Standby Mode
Min
20
µs
Note: Not 100% tested.
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
CE#, OE#
tReadyw
RESET#
tRP
Figure 11. Reset Timings
30
Am29N323D
August 8, 2002
AC CHARACTERISTICS
Erase/Program Operations
Parameter
JEDEC
Standard
Description
11A
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
110
ns
tAVWL
tAS
Address Setup Time
Min
5
ns
tWLAX
tAH
Address Hold Time
Min
7
ns
tAVDP
AVD# Low Time
Min
12
ns
tDVWH
tDS
Data Setup Time
Min
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tGHWL
tGHWL
Read Recovery Time Before Write
Typ
0
ns
tELWL
tCS
CE# Setup Time
Typ
0
ns
tWHEH
tCH
CE# Hold Time
Typ
0
ns
tWLWH
tWP/tWRL
Write Pulse Width
Typ
60
ns
tWHWL
tWPH
Write Pulse Width High
Typ
30
ns
tSR/W
Latency Between Read and Write Operations
Min
0
ns
tWHWH1
tWHWH1
Programming Operation (Note 2)
Typ
11.5
µs
tWHWH1
tWHWH1
Accelerated Programming Operation (Note 2)
Typ
4
µs
tWHWH2
tWHWH2
Sector Erase Operation (Notes 2, 3)
Typ
1.5
sec
tVPP
VPP Rise and Fall Time
Min
500
ns
tVPS
VPP Setup Time (During Accelerated Programming)
Min
1
µs
tVCS
VCC Setup Time
Min
50
µs
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
3. Does not include the preprogramming time.
August 8, 2002
Am29N323D
31
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
Read Status Data
tAS
AVD
tAH
tAVDP
VA
PA
A16:A20
A/DQ0:
A/DQ15
555h
PA
A0h
VA
PD
VA
In
Progress
VA
Complete
tDS
tDH
CE#
tCH
OE#
tWP
WE#
tCS
tWHWH1
tWPH
tWC
VIH
CLK
VIL
tVCS
VCC
PS
PS in
valid only when PS mode is enabled
Notes:
1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits.
2. “In progress” and “complete” refer to status of program operation.
3. A16–A20 are don’t care during command sequence unlock cycles.
Figure 12. Program Operation Timings
32
Am29N323D
August 8, 2002
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
Read Status Data
tAS
AVD
tAH
tAVDP
VA
SA
A16:A20
555h for
chip erase
A/DQ0:
A/DQ15
2AAh
55h
SA
VA
10h for
chip erase
VA
30h
In
Progress
VA
Complete
tDS
tDH
CE#
tCH
OE#
tWP
WE#
tCS
tWHWH2
tWPH
tWC
VIH
CLK
VIL
tVCS
VCC
Notes:
1. SA is the sector address for Sector Erase.
2. Address bits A16–A20 are don’t cares during unlock cycles in the command sequence.
Figure 13. Chip/Sector Erase Operations
August 8, 2002
Am29N323D
33
AC CHARACTERISTICS
CE#
AVD#
WE#
A16:A20
PA
A/DQ0:
A/DQ15
Don't Care
CE#
VPP
1 µs
A0h
PA
PD
Don't Care
tVPS
VPP
tVPP
VIL or VIH
Notes:
1. VPP can be left high for subsequent programming pulses.11
2. Use setup and hold times from conventional program operation.
3. Sectors must be unlocked using the Sector Lock/Unlock command sequence prior to raising VPP to VID.
Figure 14. Accelerated Unlock Bypass Programming Timing
34
Am29N323D
August 8, 2002
AC CHARACTERISTICS
AVD
tCEZ
tCE
CE#
tCH
tOEZ
tOE
OE#
tOEH
WE#
tACC
A16:A20
VA
A/DQ0:
A/DQ15
VA
VA
Status Data
VA
Status Data
Notes:
1. All status reads are asynchronous.
2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete,
and Data# Polling will output true data.
Figure 15.
Data# Polling Timings (During Embedded Algorithm)
AVD
tCEZ
tCE
CE#
tCH
tOEZ
tOE
OE#
tOEH
WE#
tACC
A16:A21
VA
A/DQ0:
A/DQ15
VA
VA
Status Data
VA
Status Data
Notes:
1. All status reads are asynchronous.
2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete,
the toggle bits will stop toggling.
Figure 16. Toggle Bit Timings (During Embedded Algorithm)
August 8, 2002
Am29N323D
35
AC CHARACTERISTICS
address boundary occurs every 64 words, beginning
at address 000000h: 00003Fh, 00007Fh, 0000BFh, etc.
C59
C60
C61
C62
C62
C63
C64
C65
C66
C67
3B
3C
3D
3E
3E
3F
40
41
42
43
CLK
Address (hex)
AVD#
(stays high)
tRACC
RDY
latency
A/DQ0:
A/DQ15
OE#,
CE#
D59
D60
D61
D62
D63
D64
D65
D66
D67
(stays low)
Notes:
1. Cxx indicates the clock that triggers Dxx on the outputs; for example, C61 triggers D61.
2. If PS is enabled, RDY will be low for an additional cycle prior to the boundary crossing latency.
Figure 17. Latency with Boundary Crossing
36
Am29N323D
August 8, 2002
AC CHARACTERISTICS
AVD# low with clock
present enables
burst read mode
device is programmable from 4 to 7 total cycles
during initial access (here, programmable wait state
function is set to 02h; 6 cycles total)
1 additional
wait state to
indicate PS
is enabled
PS high if data is inverted,
low if data is not inverted
CLK
AVD#
OE#
A16:A21
(all)
High-Z
A/DQ0: High-Z
A/DQ15
(previous)
Address
Address
D0
RDY High-Z
(previous)
D1
PS
PS High-Z
(previous)
A/DQ0: High-Z
A/DQ15
(current)
D2
PS1
Address
D0
RDY High-Z
(current)
PS
PS2
D1
D2
PS1
PS2
boundary
latency
PS High-Z
(current)
1 additional
wait state if
address is
at boundary
Note:The previous behavior of RDY refers to devices that have an extended autoselect ID code of 01h. The current behavior of
RDY refers to devices that have an extended autoselect ID code of 20h.
Figure 18. Initial Access with Power Saving (PS) Function and Address Boundary Latency
August 8, 2002
Am29N323D
37
AC CHARACTERISTICS
AVD# low with clock
present enables
burst read mode
device is programmable from 4 to 7 total cycles
during initial access (here, programmable wait state
function is set to 02h; 6 cycles total)
CLK
AVD#
OE#
A16:A21
(all)
High-Z
A/DQ0: High-Z
A/DQ15
(previous)
Address
Address
D1
D0
D2
RDY High-Z
(previous)
A/DQ0: High-Z
A/DQ15
(current)
Address
D0
RDY High-Z
(current)
D1
D2
boundary
latency
1 additional
wait state if
address is
at boundary
Note:The previous behavior of RDY refers to devices that have an extended autoselect ID code of 01h. The current behavior of
RDY refers to devices that have an extended autoselect ID code of 20h.
Figure 19. Initial Access with Address Boundary Latency
38
Am29N323D
August 8, 2002
AC CHARACTERISTICS
A/DQ0:
A/DQ15
D0
D1
Rising edge of next clock cycle
following last wait state triggers
next burst data
AVD#
total number of clock cycles
following AVD# falling edge
OE#
1
2
3
4
5
6
7
0
1
2
3
CLK
number of clock cycles
programmed
Wait State Decoding Addresses:
A13, A12 = “11” ⇒ 3 programmed, 7 total
A13, A12 = “10” ⇒ 2 programmed, 6 total
A13, A12 = “01” ⇒ 1 programmed, 5 total
A13, A12 = “00” ⇒ 0 programmed, 4 total
Note: Figure assumes that PS is not enabled, and address D0 is not at an address boundary.
Figure 20. Example of Five Wait States Insertion
August 8, 2002
Am29N323D
39
AC CHARACTERISTICS
Last Cycle in
Program or
Sector Erase
Command Sequence
Read status (at least two cycles) in same bank
and/or array data from other bank
tWC
tRC
Begin another
write or program
command sequence
tRC
tWC
CE#
OE#
tOE
tOEH
tGHWL
WE#
tWPH
tWP
tDS
tDH
A/DQ0:
A/DQ15
PA/SA
PD/30h
tDF
tACC
RA
tOH
RD
RA
RD
555h
AAh
tSR/W
A16: A20
PA/SA
RA
RA
tAS
AVD#
tAH
Note: Breakpoints in waveforms indicate that system may alternately read array data from the “non-busy bank” while checking
the status of the program or erase operation in the “busy” bank. The system should read status twice to ensure valid information.
Figure 21.
40
Back-to-Back Read/Write Cycle Timings
Am29N323D
August 8, 2002
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
32 Kword
1.5
15
4 Kword
0.3
5
Unit
Sector Erase Time
s
Chip Erase Time
Word Programming Time
97
Comments
Excludes 00h programming
prior to erasure (Note 4)
s
11.5
360
µs
Accelerated Word Programming Time
4
210
µs
Chip Programming Time (Note 3)
24
72
s
Accelerated Chip Programming Time
8
24
s
Excludes system level
overhead (Note 5)
Excludes system level
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 1.8 V VCC, 1 million cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 1.8 V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 4 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1 million cycles.
DATA RETENTION
Parameter
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Minimum Pattern Data Retention Time
August 8, 2002
Am29N323D
41
FDD 047
Dwg rev AF; 02/00
PHYSICAL DIMENSIONS*
FDD047—47-Pin Fine-Pitch Ball Grid Array (FBGA) 7 x 10 mm package
* For reference only. BSC is an ANSI standard for Basic Space Centering
42
Am29N323D
August 8, 2002
PHYSICAL DIMENSIONS
FDD 047
FDD047—47-Pin Fine-Pitch Ball Grid Array (FBGA) 7 x 10 mm (continued)
August 8, 2002
Am29N323D
43
MASK SET REVISION
44
Revision
Extended Code (Hex)
Major Reason(s) for Change
Initial
01
Second Set
01
Fix device to work at industrial temperature.
Third Set
00
Fix data polling and burst in erase suspend.
Fourth Set
20
Add extra wait state at row end addresses.
Fifth Set
21
Eliminate unlock requirement for 12 V operations. Improve 12 V erase.
Sixth Set
21
Fix erase suspend issue.
Am29N323D
August 8, 2002
APPENDIX A: DAISY CHAIN INFORMATION
Table 8. Daisy Chain Part for 32Mbit 0.23 µm Flash Products (FDD047, 7 x 10 mm)
Daisy Chain Part Number
Package
Marking
Daisy Chain
Connection
32Mb Flash Order Number
Description
AM29N323DWKD11CT
N323DD11C
Die Level
AM29N323DT11AWKIT
32Mbit 40MHz
Table 9. FDD047 Package Information
Table 10.
FDD047 Connections
Component Type/Name
FDD047
C1–D1
C4–D4
C9–D9
A5–B5
Solder resist opening
0.20 + 0.05 mm
C3–D3
C5–D5
C10–D10
A6–B6
Daisy Chain Connection Level
On die
A3–B3
C6–D6
A1–B1
A7–B7
Lead-Free Compliant
No
A10–B10
C7–D7
A2–B2
A8–B8
Quantity per Reel
750
C2–D2
C8–D8
A4–B4
A9–B9
NF1
NF2–NF5
NF16–NF19
NF17–NF20
NF1
NF5
NF2
1
2
3
4
5
6
7
8
9
10
A
B
C
D
NF16
NF17
NF19
NF20
Figure 1. FDD047 Daisy Chain Layout
(Top View, Balls Facing Down)
August 8, 2002
Am29N323D
45
REVISION SUMMARY
Notice: This document is not intended for
public release, and is differentiated from
the publicly released version by an “N” in
the publication number. For information
on the publicly released device, the
Am29BDS323, refer to publication 23476,
available at http://www.amd.com/products/nvd/techdocs/23476.pdf.
Accelerated Program Operation, Program
Command Sequence
Added text indicating that sectors must be unlocked
prior to raising VPP to VID.
AC Characteristics
Figure 9, Burst Mode Read: Corrected RDY waveform
to indicate when PS is enabled, and when RDY is in the
high impedance state.
Limited, non-public release.
Figure 14, Accelerated Unlock Bypass Programming
Timing: Modified Note 3 to indicate that sectors must
be unlocked prior to raising VPP to VID.
Revision B (June 20, 2000)
Revision B+3 (November 30, 2000)
Public release, with the following changes:
Figure 10, Asynchronous Mode Read
Block Diagram
Corrected endpoint for tAAVDS specification.
Corrected address range to A0–A20.
Figure 16, Toggle Bit Timings
(During Embedded Algorithm)
Revision A (February 15, 2000)
Ordering Information
Corrected OE# waveform during second VA (valid
address) period.
Deleted reference to 54 MHz speed option.
Device Bus Operations table
Revision B+4 (December 21, 2000)
Split address range column into two columns.
Figure 9, Burst Mode Read
AC Characteristics
Asynchronous Read: In table, changed “falling” to
“rising” in description of tAAVDS. In diagram, modified
tAAVDS and tAAVDH waveforms to reference from the
rising edge of AVD#.
Corrected RDY waveform.
Revision B+5 (March 7, 2001)
Global
Synchronous/Burst Read table: Added tRDYS , t CEH
specifications.
The 90 ns asynchronous access time specification has
changed to 110 ns. Note that the device now has a new
ordering part number and a new package marking.
Erase/Program Operations table, Program Operations
Timings figure, Chip/Sector Erase Operations Timings
figure: Added tAVDP. Added PS waveforms to program
operations timings figure.
Input/Output Descriptions, RESET#: Hardware
Reset Input
Initial Access with Power Savings (PS) and
Address Boundary Latency figure
Noted that RESET# must be asserted low during
device power-up.
Autoselect Command Sequence
Modified D0 data to extended to D1.
Added extended device ID explanatory text.
Erase and Programming Performance
Sector Erase Command Sequence, DQ7: Data#
Polling, and DQ6: Toggle Bit I
Added typical and maximum accelerated chip programming time.
Revision B+1 (August 11, 2000)
Chip Erase Command Sequence
Corrected the command sequence length during
unlock bypass mode from four cycles to two.
Revision B+2 (November 27, 2000)
Added explanatory text to indicate 200 µs wait for first
status read occurring in a different bank than the last
sector selected for erasure in a multiple bank sector
erase command sequence.
Table 4, Command Definitions
Added the extended device ID code to table. Added
corresponding note below table.
Global
Changed all 9A (speed option) references to 90A.
46
Am29N323D
August 8, 2002
Figure 18, Initial Access with Power Saving (PS)
Function and Address Boundary Latency; Figure
19, Initial Access with Address Boundary Latency
Modified Figure 18 to show previous and current
behavior of data and RDY. Added Figure 19 to show
data and RDY behavior without PS enabled.
Table 4, Command Definitions
Added row for autoselect revision ID command. Modified Note 9.
AC Characteristics, Synchronous/Burst Read table
Modified description of tOE. Deleted tCEH.
Figure 9, Burst Mode Read
Revision B+6 (July 9, 2001)
Added tRYDS, tAVDO to figure. Moved tRACC.
Accelerated Program Operation
Deleted requirement that sectors be unlocked prior to
raising VPP to VID.
Table 4, Command Definitions
Changed the manufacturer ID to 21h for devices
requiring additional latency. (See relevant note in
table.)
Hardware Reset figure and table
Changed parameter name for RESET# low during
Embedded Algorithms to tReadyw.
Figure 17, Latency with Boundary Crossing
Changed address, clock count, and data output numbering.
Figure 19, Initial
Access with Address Boundary Latency
Mask Set Revision
Added section.
Added half cycle to D0 timing.
Revision B+7 (December 7, 2001)
Mask Set Revision Table
Global
Added sixth set revision.
Deleted preliminary status from document.
Revision B+8 (January 8, 2002)
Simultaneous Read/Write Block Diagram
Added Appendix A.
Added PS and RDY signals.
Autoselect Command Sequence
Revision B+9 (August 8, 2002)
Clarified description of identifier codes.
Global
DC Characteristics table
Changed lower end of temperature range from -40°C to
-25°C.
Added Note 6.
Copyright © 2002 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
August 8, 2002
Am29N323D
47