IXYS IXFV22N60P Polarhv hiperfet power mosfet Datasheet

PolarHVTM HiPerFET
Power MOSFETs
IXFH 22N60P
IXFV 22N60P
IXFV 22N60PS
VDSS = 600
V
ID25 = 22
A
RDS(on) ≤ 350 m Ω
≤ 200 ns
trr
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
TO-247 (IXFH)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25° C to 150° C
600
V
VDGR
TJ = 25° C to 150° C; RGS = 1 MΩ
600
V
VGS
Continuous
±30
V
VGSM
Tranisent
±40
V
ID25
TC = 25° C
22
A
IDM
TC = 25° C, pulse width limited by TJM
66
A
IAR
TC = 25° C
22
A
EAR
TC = 25° C
40
mJ
EAS
TC = 25° C
1.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤150° C, RG = 4 Ω
20
V/ns
PD
TC = 25° C
400
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
TJ
TJM
Tstg
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Md
FC
Mounting torque
Mounting Force
Weight
TO-247
PLUS220 & PLUS220SMD
(TO-247)
(PLUS220)
BVDSS
VGS = 0 V, ID = 250 µA
600
VGS(th)
VDS = VGS, ID = 4 mA
3.0
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
TJ = 125° C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
V
5.5
V
±100
nA
25
250
µA
µA
350
mΩ
D (TAB)
S
G
D
S
D (TAB)
PLUS220SMD (IXFV...S)
G
S
G = Gate
S = Source
g
g
Characteristic Values
Min. Typ.
Max.
D
PLUS220 (IXFV)
1.13/10 Nm/lb.in.
11..65/2.5..15
Nm/lb.
6
4
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
G
D (TAB)
D = Drain
TAB = Drain
Features
l
Fast intrinsic diode
l
Unclamped Inductive Switching (UIS)
rated
l
International standard packages
l
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
l
Space savings
l
High power density
l
DS99315E(03/06)
IXFH 22N60P IXFV22N60P
IXFV 22N60PS
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 20 V; ID = 0.5 ID25, pulse test
20
S
3600
pF
305
pF
Crss
38
pF
td(on)
20
ns
Ciss
Coss
15
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
20
ns
td(off)
RG = 4 Ω (External)
60
ns
tf
23
ns
Qg(on)
58
nC
20
nC
22
nC
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
0.31 ° C/W
RthJC
° C/W
0.21
RthCS
Source-Drain Diode
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
Symbol
Test Conditions
IS
VGS = 0 V
22
A
ISM
Repetitive
66
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
IF = 26A
-di/dt = 100 A/µs
VR = 100V, VGS = 0 V
200
ns
QRM
TO-247 AD (IXFH) Outline
1.0
1
2
3
Terminals: 1 - Gate
3 - Source
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
PLUS220 (IXFV) Outline
PLUS220SMD (IXFV_S) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
2 - Drain
Tab - Drain
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFH 22N60P IXFV22N60P
IXFV 22N60PS
Fig. 1. Output Characte ris tics
Fig. 2. Exte nde d Output Characte ris tics
@ 25º C
@ 25º C
22
45
V GS = 10V
20
18
9V
8V
35
16
7.5V
30
14
I D - Amperes
I D - Amperes
V GS = 10V
40
8V
7.5V
12
10
8
7V
6
25
20
7V
15
10
4
6V
2
6.5V
5
0
6V
0
0
1
2
3
4
5
6
7
8
9
0
3
6
9
V D S - V olts
Fig. 3. Output Characte ris tics
22
18
21
24
27
30
3.4
V GS = 10V
20
3.1
R D S ( o n ) - Normalized
8V
7V
18
16
I D - Amperes
15
V D S - V olts
Fig. 4. RDS(on ) Norm alize d to ID = 11A
V alue vs . Junction Te m pe rature
@ 125º C
14
6.5V
12
10
8
6V
6
4
5.5V
5V
2
V GS = 10V
2.8
2.5
2.2
I D = 22A
1.9
1.6
I D = 11A
1.3
1
0.7
0
0.4
0
2
4
6
8
10
12
V D S - V olts
14
16
18
-50
20
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Nor m alize d to
Fig. 6. Drain Curre nt vs . Cas e
Te m pe rature
ID = 11A V alue vs . Dr ain Curr e nt
24
3
2.8
V GS = 10V
2.6
TJ = 125 º C
20
2.4
2.2
I D - Amperes
R D S ( o n ) - Normalized
12
2
1.8
1.6
16
12
8
1.4
1.2
4
TJ = 25 º C
1
0.8
0
0
5
10
15
20
25
I D - A mperes
© 2006 IXYS All rights reserved
30
35
40
45
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXFH 22N60P IXFV22N60P
IXFV 22N60PS
Fig. 8. Trans conductance
30
27
27
24
24
21
21
- Siemens
30
15
12
TJ = 125 º C
9
25 º C
6
TJ = -40 º C
25 º C
125 º C
18
15
fs
18
12
g
I D - Amperes
Fig. 7. Input Adm ittance
9
6
-40 º C
3
3
0
0
4.5
5
5.5
6
6.5
7
7.5
8
0
3
6
9
V G S - V olts
Fig. 9. Sour ce Cur re nt vs .
Source -To-Drain V oltage
18
21
24
27
30
10
60
V G S - Volts
50
I S - Amperes
15
Fig. 10. Gate Char ge
70
40
30
TJ = 125 º C
9
V DS = 300V
8
I D = 11A
7
I G = 10m A
6
5
4
3
20
TJ = 25 º C
10
2
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0
V S D - V olts
10
20
30
40
50
60
Q G - nanoCoulombs
Fig. 12. For w ard-Bias
Safe Ope rating Are a
Fig. 11. Capacitance
100
10000
f = 1MH z
R DS(on) Lim it
C iss
1000
I D - Amperes
Capacitance - picoFarads
12
I D - A mperes
C oss
100
25µs
100µs
10
1m s
10m s
TJ = 150ºC
C rs s
DC
TC = 25ºC
1
10
0
5
10
15
20
25
V D S - V olts
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V D S - V olts
1000
IXFH 22N60P IXFV22N60P
IXFV 22N60PS
Fig. 13. Maxim um Transient Therm al Resistance
R ( t h ) J C - ºC / W
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2006 IXYS All rights reserved
IXYS REF: T_22N60P (6J) 02-17-06-B
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