Microsemi APTM100A13DG Phase leg with series diodes mosfet power module Datasheet

APTM100A13DG
Phase leg
with Series diodes
MOSFET Power Module
Application
• Zero Current Switching resonant mode
VBUS
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
G1
OUT
0/VBUS
S2
G1
VBUS
0/VBUS
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
OUT
S1
S2
G2
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
65
49
240
±30
156
1250
24
30
1300
Unit
V
A
V
mΩ
W
A
December, 2006
G2
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-6
APTM100A13DG – Rev 2
S1
VDSS = 1000V
RDSon = 130mΩ typ @ Tj = 25°C
ID = 65A @ Tc = 25°C
APTM100A13DG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Tj = 25°C
VGS = 0V,VDS= 800V
Tj = 125°C
VGS = 10V, ID = 32.5A
VGS = VDS, ID = 6mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
IRM
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
130
3
Min
VGS = 10V
VBus = 500V
ID = 65A
Test Conditions
IF = 120A
VR = 800V
di/dt = 400A/µs
Max
Unit
nF
nC
9
9
50
24
mJ
0.46
4.4
mJ
0.57
Typ
Tj = 25°C
Tj = 125°C
Max
150
600
Tj = 125°C
120
2.5
3
1.8
Tj = 25°C
265
Tj = 125°C
Tj = 25°C
Tj = 125°C
350
1120
5800
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ns
2.13
Min
1200
T c = 100°C
IF = 120A
IF = 240A
IF = 120A
Unit
µA
mA
mΩ
V
nA
363
Inductive switching @ 125°C
VGS = 15V
VBus = 667V
ID = 65A
R G = 0.5Ω
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 65A, R G = 0.5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 65A, R G = 0.5Ω
VR=1200V
Typ
15.2
2.6
0.42
562
Max
600
2
156
5
±450
75
Series diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Repetitive Reverse Voltage
Typ
Unit
V
µA
A
3
V
December, 2006
IDSS
Test Conditions
VGS = 0V,VDS= 1000V
ns
nC
2-6
APTM100A13DG – Rev 2
Symbol Characteristic
APTM100A13DG
Thermal and package characteristics
Symbol Characteristic
Min
Transistor
Series diode
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.10
0.46
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3-6
APTM100A13DG – Rev 2
December, 2006
SP6 Package outline (dimensions in mm)
APTM100A13DG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.12
0.1
0.9
0.08
0.7
0.06
0.5
0.04
0.3
0.02
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
360
VDS > I D(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
7V
VGS=15&10V
150
6.5V
ID, Drain Current (A)
120
6V
90
60
5.5V
30
5V
300
240
180
120
T J=25°C
60
0
TJ=125°C
0
4
8
12
16
20
24
28
0
ID, DC Drain Current (A)
V GS=10V
1.2
V GS=20V
1.1
3
4
5
6
7
8
9 10
70
Normalized to
VGS =10V @ 32.5A
1.3
2
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
1
0.9
0.8
60
50
40
30
20
10
0
0
30
60
90
120
150
180
25
ID, Drain Current (A)
50
75
100
125
150
December, 2006
RDS(on) Drain to Source ON Resistance
T J=-55°C
0
TC, Case Temperature (°C)
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4-6
APTM100A13DG – Rev 2
I D, Drain Current (A)
180
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS =10V
ID=32.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
1.1
I D, Drain Current (A)
1.0
0.9
0.8
0.7
100µs
limited by RDSon
100
1ms
Single pulse
TJ=150°C
TC=25°C
10
10ms
1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
Ciss
10000
Coss
1000
Crss
100
0
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
10
100
1000
VDS , Drain to Source Voltage (V)
14
ID=65A
TJ=25°C
12
10
V DS =200V
V DS =500V
8
VDS=800V
6
4
2
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
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0
120 240 360 480 600 720 840
Gate Charge (nC)
December, 2006
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
5-6
APTM100A13DG – Rev 2
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM100A13DG
APTM100A13DG
Delay Times vs Current
t d(off)
50
40
40
tr and tf (ns)
VDS=667V
RG=0.5Ω
T J=125°C
L=100µH
30
20
t d(on)
30
20
10
10
0
30
40
50
60
70
80
90 100
20
30
40 50 60 70 80
I D, Drain Current (A)
ID, Drain Current (A)
90 100
Switching Energy vs Gate Resistance
Switching Energy vs Current
6
VDS=667V
RG=0.5Ω
T J=125°C
L=100µH
7
6
5
Switching Energy (mJ)
8
Eon
4
3
2
Eoff
1
0
5
Eon
4
V DS=667V
ID=65A
T J=125°C
L=100µH
3
2
Eoff
1
0
20
30
40
50
60 70
80
90 100
0
ID, Drain Current (A)
1
2
3
4
5
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
250
ZCS
200
Hard
switching
150
I DR, Reverse Drain Current (A)
300
VDS=667V
D=50%
RG=0.5Ω
T J=125°C
T C=75°C
100
50
0
10
20
30
40
50
ID, Drain Current (A)
TJ=150°C
100
T J=25°C
10
1
60
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
December, 2006
Switching Energy (mJ)
tr
0
20
Frequency (kHz)
tf
VDS=667V
RG=0.5Ω
T J=125°C
L=100µH
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6-6
APTM100A13DG – Rev 2
td(on) and td(off) (ns)
Rise and Fall times vs Current
50
60
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