INCHANGE Semiconductor isc Silicon NPN Power Transistor NJD2873 DESCRIPTION ·Low Collector-Emitter Saturation Voltage: VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50mA) ·DC Current Gain -hFE = 120(Min)@ IC= 0.5A ·High Current-Gain—Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-gain audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous 2 A Collector Current-Peak 3 A 0.4 A IC ICM IB Base Current PC Total Power Dissipation @ TC=25℃ Collector Power Dissipation Ta=25℃ TJ Tstg 15 W 1.68 Junction Temperature Storage Temperature Range 150 ℃ -65~150 ℃ 10 ℃/W 89.3 ℃/W THERMAL CHARACTERISTICS Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Ambient Resistance,Junction isc website：www.iscsemi.com to 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor NJD2873 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER V (SUS)CEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 50mA 0.3 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 50mA 1.2 V IC= 1A ; VCE= 2V 1.2 V IC=0.75A;VCE=1.6V@-40℃ ≤TJ ≤ 150℃ 0.75 V VBE(on) Base-Emitter On Voltage CONDITIONS MIN TYP MAX 50 UNIT V ICBO Collector Cutoff Current VCB= 50V; IE= 0 100 nA IEBO Emitter Cutoff Current VEB= 5V; IC=0 100 nA hFE fT COB IC= 0.5A; VCE= 2V 120 IC= 2A; VCE= 2V 40 IC=0.75A;VCE=1.6V@-40℃ ≤TJ ≤ 150℃ 80 Current-Gain—Bandwidth Product IC= 0.1A ;VCE= 10V 65 Output Capacitance VCB=10V;f=0.1MHz DC Current Gain isc website：www.iscsemi.com 2 360 360 MHZ 80 pF isc & iscsemi is registered trademark