Foshan MJW21194 Silicon npn transistor in a to-3p plastic package. Datasheet

MJW21194
Rev.E Sep.-2016
描述
/
DATA SHEET
Descriptions
TO-3P 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-3P Plastic Package.
特征
/ Features
用于 200W 高保真音频功率输出,与 MJW21193 互补。
Recommend for 200W high fidelity audio frequency amplifier output stage, Complementary to
MJE21193.
用途
/
Applications
用于一般功率放大。
Power amplifier applications.
内部等效电路
引脚排列
/ Equivalent Circuit
/ Pinning
PIN1:Base
放大及印章代码
PIN 2:Collector
PIN 3:Emitter
/ hFE Classifications & Marking
见印章说明。See Marking Instructions.
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MJW21194
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极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
符号
Symbol
VCBO
数值
Rating
400
单位
Unit
V
Collector to Emitter Voltage
VCEO
250
V
Emitter to Base Voltage
VEBO
5
V
Collector Current - Continuous
IC
16
A
Peak Collector Current
ICP
30
A
Base Current
IB
5
A
PC(TC=25℃)
200
W
Tj
150
℃
Tstg
-55~150
℃
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
电性能参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector Cut-Off Current
符号
Symbol
测试条件
Test Conditions
最小值 典型值 最大值 单位
Min
Typ
Max
Unit
VCEO
IC=100mA
IB=0
ICEO
VCE=200V
IE=0
100
μA
Collector Cut-Off Current
ICBO
VCB=250V
IE=0
100
μA
Emitter Cut-Off Current
IEBO
VEB=5.0V
IC=0
100
μA
hFE(1)
VCE=5.0V
IC=8.0A
10
hFE(2)
VCE=5.0V
IC=16A
8
VCE(sat)(1)
IC=8.0A
IB=0.8A
1.4
V
VCE(sat)(2)
IC=16A
IB=3.2A
4
V
VCE=5.0V
IC=8.0A
2.2
V
VCE=10V
f=1.0MHz
VCB=10V
f=1.0MHz
IC=1.0A
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Voltage
Transition Frequency
Collector output capacitance
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VBE
fT
Cob
IE=0
250
V
80
4
MHz
500
pF
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MJW21194
Rev.E Sep.-2016
电参数曲线图
DATA SHEET
/ Electrical Characteristic Curve
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MJW21194
Rev.E Sep.-2016
外形尺寸图
DATA SHEET
/ Package Dimensions
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MJW21194
Rev.E Sep.-2016
印章说明
/
DATA SHEET
Marking Instructions
BR
W21194
****
说明:
BR:  

    为公司代码
W21194:
    为型号代码
****:


为生产批号代码,随生产批号变化。
Note:
BR:
Company Code.
W21194:
Product Type.
****:
Lot No. Code, code change with Lot No.
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MJW21194
Rev.E Sep.-2016
DATA SHEET
波峰焊温度曲线图(无铅)
/
Temperature Profile for Dip Soldering(Pb-Free)
说明:
Note:
1、预热温度 25~150℃,时间 60~90sec;
1.Preheating:25~150℃, Time:60~90sec.
2、峰值温度 255±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:255±5℃, Duration:5±0.5sec.
3、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10℃/sec.
耐焊接热试验条件
/
Resistance to Soldering Heat Test Conditions
温度:270±5℃
包装规格
Package Type
封装形式
使用说明
Temp.:270±5℃
Time:10±1 sec
/ Packaging SPEC.
套管包装
TO-3P
时间:10±1 sec.
/ TUBE
Units 包装数量
Dimension
包装尺寸
3
(unit:mm )
Units/Tube
只/套管
Tubes/Inner Box
套管/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Tube 套管
Inner Box 盒
Outer Box 箱
30
15
450
5
2250
497.5×46×8
555×164×50
575×290×180
/ Notices
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