Microsemi MSFC25-12 Thyristor/diode module Datasheet

MSFC25
Thyristor/Diode Modules
VRRM / VDRM
IFAV / ITAV
800 to 1600V
25Amp
Applications
y
y
y
y
Circuit
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Features
y
y
y
y
y
y
International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide
DBC ceramic isolated metal baseplate
UL E243882 approved
Module Type
TYPE
VRRM/VDRM
VRSM
MSFC25-08
MSFC25-12
MSFC25-16
800V
1200V
1600V
900V
1300V
1700V
◆Diode
Maximum Ratings
Symbol
Values
Units
ID
Output Current(D.C.)
Tc=85℃
25
A
IFSM
Surge forward current
t=10mS Tvj =45℃
550
A
1500
A2s
3000
V
Operating Junction Temperature
-40 to +125
℃
Storage Temperature
Mounting Torque
To terminals(M5)
-40 to +125
3±15%
℃
Nm
To heatsink(M6)
5±15%
Nm
100
g
Values
Units
2
it
Visol
Tvj
Tstg
Mt
Item
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Ms
Weight
a.c.50HZ;r.m.s.;1min
Module(Approximately)
Thermal Characteristics
Symbol
Item
Rth(j-c) Thermal Impedance, max.
Rth(c-s)
Conditions
Thermal Impedance, max.
Conditions
Junction to Case
0.45
℃/W
Case to Heatsink
0.10
℃/W
Electrical Characteristics
Symbol
Item
VFM
Forward Voltage Drop, max.
IRRM
Repetitive Peak Reverse Current,
max.
MSFC25 – Rev 0
Oct, 2011
Conditions
T=25℃ IF =75A
Tvj =25℃ VRD=VRRM
Tvj =125℃ VRD=VRRM
Values
Min.
Typ.
≤0.5
≤6
Max.
1.80
Units
V
mA
mA
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MSFC25
◆Thyristor
Maximum Ratings
Symbol
Item
Conditions
Values
Units
o
ITAV
Average On-State Current
Sine 180 ;Tc=85℃
25
A
ITSM
Surge On-State Current
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
550
480
A
Circuit Fusing Consideration
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
1500
1150
A2s
i2t
Visol
Tvj
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Tstg
Storage Temperature
Mt
Mounting Torque
Ms
a.c.50HZ;r.m.s.;1min
3000
-40 to +125
-40 to +125
V
℃
To terminals(M5)
3±15%
℃
Nm
To heatsink(M6)
5±15%
Nm
di/dt
Critical Rate of Rise of On-State
Current
TVJ= TVJM , 2/3VDRM ,IG =500mA
Tr<0.5us,tp>6us
150
A/us
dv/dt
Critical Rate of Rise of Off-State
Voltage, min.
TJ=TVJM ,2/3VDRM linear voltage rise
1000
V/us
a
Maximum allowable acceleration
50
m/s2
Thermal Characteristics
Symbol
Item
Thermal
Impedance,
max.
Rth(j-c)
Rth(c-s)
Thermal Impedance, max.
Values
Units
Junction to Case
Conditions
0.90
℃/W
Case to Heatsink
0.20
℃/W
Electrical Characteristics
Symbol
Item
VTM
Peak On-State Voltage, max.
Repetitive Peak Reverse Current,
max. / Repetitive Peak Off-State
Current, max.
Conditions
Values
Min. Typ. Max.
Units
1.80
V
TVJ=TVJM ,VR=VRRM ,VD=
VDRM
10
mA
On state threshold voltage
For power-loss
calculations only
(TVJ =125℃)
0.9
V
Value of on-state
slope resistance. max
TVJ =TVJM
12
mΩ
VGT
Gate Trigger Voltage, max.
TVJ =25℃ , VD =6V
2.5
V
IGT
Gate Trigger Current, max.
TVJ =25℃ , VD =6V
150
mA
VGD
IGD
Non-triggering gate voltage, max.
Non-triggering gate current, max.
TVJ=125℃,VD =2/3VDRM
TVJ =125℃, VD =2/3VDRM
0.25
5
V
mA
IL
Latching current, max.
TVJ =25℃ , RG = 33 Ω
250
400
mA
IH
Holding current, max.
TVJ =25℃ , VD =6V
100
200
mA
tgd
Gate controlled delay time
TVJ=25℃,
IG=1A, diG/dt=1A/us
1
us
tq
Circuit commutated turn-off time
TVJ =TVJM
80
us
IRRM/IDRM
VTO
rT
MSFC25 – Rev 0
Oct, 2011
T=25℃ IT =75A
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MSFC25
Performance Curves
75
50
W
A
sin.180
40
DC
rec.120
DC
rec.60
50
30
rec.30
sin.180
rec.120
20
25
rec.60
rec.30
10
PTAV
0
ITAVM
0 ITAV
10
20
30
A
0
40
0 Tc
Fig1. Power dissipation
50
100
℃ 130
Fig2.Forward Current Derating Curve
1000
1.2
℃/ W
50HZ
A
Zth(j-S)
Zth(j-C)
0.8
500
0.4
0
0
0.001 t 0.01
0.1
1
10
S 100
Fig3. Transient thermal impedance
10
100
ms 1000
Fig4. Max Non-Repetitive Forward Surge
Current
100
Typ.
A
75
max.
50
25
25℃
- - -125℃
IT
0
0 VTM
0.5
1.0
1.5
2.0
V
2.5
Fig5. Forward Characteristics
MSFC25 – Rev 0
Oct, 2011
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3/4
MSFC25
100
1/2·MSFC25
V
20V;20Ω
10
VGT
1
PG(tp)
-40℃
Tvj 25℃
125℃
VG
VGD125℃
IGT
IGD125℃
0.1
0.001 IG
0.01
0.1
1
10
A 100
Fig6. Gate trigger Characteristics
Package Outline Information
CASE: F1
×
Dimensions in mm
MSFC25 – Rev 0
Oct, 2011
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4/4
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