ISC BU2720AX Isc silicon npn power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BU2720AX
DESCRIPTION
·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 825V (Min)
·High Switching Speed
APPLICATIONS
·Designed for use in horizontal deflection circuits of color
TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage(VBE= 0)
1700
V
VCEO
Collector-Emitter Voltage
825
V
VEBO
Emitter-Base Voltage
7.5
V
IC
Collector Current- Continuous
10
A
ICM
Collector Current-Peak
25
A
IB
Base Current- Continuous
10
A
IBM
Base Current-Peak
14
A
PC
Collector Power Dissipation
@ TC=25℃
45
W
TJ
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.8
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BU2720AX
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA; IB= 0, L= 25mH
825
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7.5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5.5A; IB= 1.38A
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5.5A; IB= 1.38A
1.0
V
ICES
Collector Cutoff Current
VCE= 1500V; VBE= 0
VCE= 1500V; VBE= 0; TC=125℃
1.0
2.0
mA
IEBO
Emitter Cutoff Current
VEB= 7.5V; IC= 0
1.0
mA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
hFE-2
DC Current Gain
IC= 5.5A; VCE= 1V
22
4
7.5
Switching times
tstg
tf
Storage Time
Fall Time
isc Website:www.iscsemi.cn
IC= 5.5A, LC = 750μH;
Cfb = 15.5 nF; VCC = 125 V;
IB(end)= 1.2A; LB= 6μH; -VBB= 4V;
-IBM = ICM/2
2
8.5
μs
0.9
μs
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