NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC4242S █ APPLICATIONS high Voltage high-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation（Tc=25℃）……………………………75W VCBO ——Collector-Base Voltage………………………………700V VCEO ——Collector-Emitter Voltage……………………………400V 1―Base，B 2―Collector，C 3―Emitter，E VE B O —— Emitter - Base Voltage………………………………9 V IC——Collector Current（DC）………………………………………4A IC——Collector Current（Pulse）……………………………………8A Ib——Base Current…………………………………………… 2mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min BVCEO Collector-Emitter Breakdown Voltage ４００ IEBO Typ Max １．０ Emitter Cut-off Current Unit Test Conditions Ｖ IC=10mA, IB=0 ｍＡ VEB=9V, IC=0 HFE（1） DC Current Gain １０ ４０ VCE=5V, IC=1A HFE（2） ８ ４０ VCE=5V, IC=2A VCE(sat1) Collector- Emitter Saturation Voltage ０．５ Ｖ IC=1A, IB =0.2A VCE(sat2) Collector- Emitter Saturation Voltage ０．６ Ｖ IC=2A, IB =0.5A VCE(sat3) Collector- Emitter Saturation Voltage １ Ｖ IC=4A, IB =1A VBE(sat1) Base-Emitter Saturation Voltage １．２ Ｖ IC=1A, IB =0.2A VBE(sat2) Base-Emitter Saturation Voltage １．６ Ｖ IC=2A, IB =0.5A ｐＦ VCB=10V, IE=0，f=0.1ＭＨｚ VCE=10V, IC=0.5A Cob fT ６５ Output Capacitance Current Gain-Bandwidth Product ４ ＭＨｚ tON Turn-On Time ０．８ μＳ tSTG Storage ４ ０．９ μＳ μＳ tR Time Rise Time Vcc=125V，IC=2A， IB1 = IB2 =0.4A █ hFE Classification H1 H2 H3 H4 H5 １０—１６ １４—２１ １９—２６ ２４—３１ ２９—４０ NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC4242S