Central CMLT3946E Surface mount silicon complementary transistor Datasheet

CMLT3904E CMLT3904EG* NPN
CMLT3906E CMLT3906EG* PNP
CMLT3946E CMLT3946EG* NPN/PNP
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
COMPLEMENTARY TRANSISTORS
SOT-563 CASE
* Device is Halogen Free by design
ENHANCED SPECIFICATIONS:
♦ BVCBO from 40V MIN to 60V MIN (PNP)
♦ BVEBO from 5.0V MIN to 6.0V MIN (PNP)
MAXIMUM RATINGS: (TA=25°C)
♦ Collector-Base Voltage
Collector-Emitter Voltage
♦Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
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DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices
are combinations of dual, enhanced specification
transistors in a space saving SOT-563 package,
designed for small signal general purpose amplifier
and switching applications.
MARKING CODES: CMLT3904E:
CMLT3906E:
CMLT3946E:
CMLT3904EG*:
CMLT3906EG*:
CMLT3946EG*:
L04
L06
L46
C4G
C6G
46G
♦ hFE from 60 MIN to 70 MIN (NPN/PNP)
♦ VCE(SAT) from 0.3V MAX to 0.2V MAX (NPN)
from 0.4V MAX to 0.2V MAX (PNP)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
PD
TJ, Tstg
ΘJA
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
NPN
SYMBOL
TEST CONDITIONS
MIN
TYP
ICEV
VCE=30V, VEB=3.0V
♦BVCBO
IC=10μA
60
115
BVCEO
IC=1.0mA
40
60
♦BV
IE=10μA
6.0
7.5
EBO
♦VCE(SAT)
IC=10mA, IB=1.0mA
0.057
♦VCE(SAT)
IC=50mA, IB=5.0mA
0.100
VBE(SAT)
IC=10mA, IB=1.0mA
0.65
0.75
VBE(SAT)
IC=50mA, IB=5.0mA
0.85
♦hFE
VCE=1.0V, IC=0.1mA
90
240
♦hFE
VCE=1.0V, IC=1.0mA
100
235
hFE
VCE=1.0V, IC=10mA
100
215
♦hFE
VCE=1.0V, IC=50mA
70
110
hFE
VCE=1.0V, IC=100mA
30
50
60
40
6.0
200
350
300
150
-65 to +150
357
PNP
TYP
MAX
50
90
55
7.9
0.050 0.100
0.100 0.200
0.75
0.85
0.85
0.95
130
150
150
300
120
55
-
UNITS
V
V
V
mA
mW
mW
mW
°C
°C/W
UNITS
nA
V
V
V
V
V
V
V
♦ Enhanced Specification
Notes:
(1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2
R6 (29-June 2015)
CMLT3904E CMLT3904EG* NPN
CMLT3906E CMLT3906EG* PNP
CMLT3946E CMLT3946EG* NPN/PNP
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
COMPLEMENTARY TRANSISTORS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C)
SYMBOL
TEST CONDITIONS
MIN
MAX
fT
VCE=20V, IC=10mA, f=100MHz
300
Cob
VCB=5.0V, IE=0, f=1.0MHz
4.0
Cib
VBE=0.5V, IC=0, f=1.0MHz
8.0
hie
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
12
hre
VCE=10V, IC=1.0mA, f=1.0kHz
0.1
10
hfe
hoe
NF
td
tr
ts
tf
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=100μA, RS =1.0kΩ
f=10Hz to 15.7kHz
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
100
1.0
UNITS
MHz
pF
pF
kΩ
x10-4
400
60
μS
4.0
35
35
200
50
dB
ns
ns
ns
ns
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
CMLT3904E
CMLT3904EG*
* Device is Halogen Free by design
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CMLT3906E
CMLT3906EG*
CMLT3946E
CMLT3946EG*
R6 (29-June 2015)
CMLT3904E CMLT3904EG* NPN
CMLT3906E CMLT3906EG* PNP
CMLT3946E CMLT3946EG* NPN/PNP
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
COMPLEMENTARY TRANSISTORS
SERVICES
• Bonded Inventory
• Custom Electrical Screening
• Custom Electrical Characteristic Curves
• SPICE Models
• Custom Packaging
• Package Base Options
• Custom Device Development / Multi Discrete Modules (MDM™)
• Bare Die Available for Hybrid Applications
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R6 (29-June 2015)
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