Fairchild FCP104N60 N-channel superfetâ® ii mosfet Datasheet

FCP104N60
N-Channel SuperFET® II MOSFET
600 V, 37 A, 104 mΩ
Features
Description
• 650 V @ TJ = 150°C
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This advanced technology
is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFET II MOSFET
is suitable for various AC/DC power conversion for system
miniaturization and higher efficiency.
• Typ. RDS(on) = 96 mΩ
• Ultra Low Gate Charge (Typ. Qg = 63 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 280 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Telecom / Sever Power Supplies
• Industrial Power Supplies
D
GD
S
G
TO-220
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
6.8
A
EAR
Repetitive Avalanche Energy
(Note 1)
3.57
mJ
dv/dt
Parameter
FCP104N60
600
- DC
±20
- AC
(f > 1 Hz)
- Continuous (TC = 25oC)
37
- Continuous (TC = 100oC)
- Pulsed
24
A
111
A
(Note 2)
809
mJ
MOSFET dv/dt
100
Peak Diode Recovery dv/dt
V
(Note 1)
(Note 3)
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
TL
±30
Unit
V
- Derate Above 25oC
20
V/ns
357
W
2.85
W/oC
-55 to +150
oC
300
oC
FCP104N60
Unit
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case, Max.
RθJA
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCP104N60 Rev. C0
0.35
40
1
oC/W
www.fairchildsemi.com
FCP104N60 — N-Channel SuperFET® II MOSFET
June 2014
Part Number
FCP104N60
Top Mark
FCP104N60
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS = 0 V, ID = 10 mA, TJ = 25°C
600
-
-
V
VGS = 0 V, ID = 10 mA, TJ = 150°C
650
-
-
V
-
0.67
-
V/oC
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 10 mA, Referenced to
25oC
VDS = 600 V, VGS = 0 V
-
-
1
VDS = 480 V, VGS = 0 V,TC = 125oC
-
1.98
-
VGS = ±20 V, VDS = 0 V
-
-
±100
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
2.5
-
3.5
V
Static Drain to Source On Resistance
-
96
104
mΩ
gFS
Forward Transconductance
VGS = 10 V, ID = 18.5 A
VDS = 20 V, ID = 18.5 A
-
33
-
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss(eff.)
Effective Output Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
VDS = 380 V, VGS = 0 V,
f = 1 MHz
-
3130
4165
pF
-
75
100
pF
pF
-
3.66
-
VDS = 0 V to 480 V, VGS = 0 V
-
280
-
pF
VDS = 380 V, ID = 18.5 A,
VGS = 10 V
-
63
82
nC
-
14
-
nC
-
15
-
nC
-
0.97
-
Ω
-
26
62
ns
-
18
46
ns
-
72
154
ns
-
3.3
17
ns
(Note 4)
f = 1 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 380 V, ID = 18.5 A,
VGS = 10 V, Rg = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
37
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
114
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 18.5 A
-
-
1.2
V
trr
Reverse Recovery Time
-
414
-
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 18.5 A,
dIF/dt = 100 A/μs
-
8.8
-
μC
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 6.8 A, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 18.5 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, Starting TJ = 25°C
4. Essentially independent of operating temperature.
©2014 Fairchild Semiconductor Corporation
FCP104N60 Rev. C0
2
www.fairchildsemi.com
FCP104N60 — N-Channel SuperFET® II MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
200
VGS = 10.0V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
*Notes:
1. VDS = 10V
2. 250μs Pulse Test
100
ID, Drain Current[A]
ID, Drain Current[A]
100
Figure 2. Transfer Characteristics
10
o
150 C
o
25 C
10
o
-55 C
*Notes:
1. 250μs Pulse Test
o
2. TC = 25 C
1
0.3
1
10
VDS, Drain-Source Voltage[V]
1
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.24
200
100
o
IS, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
3
4
5
6
VGS, Gate-Source Voltage[V]
7
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
*Note: TC = 25 C
0.20
0.16
VGS = 10V
0.12
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
10
o
150 C
1
o
25 C
0.1
0.01
VGS = 20V
0.08
0
20
40
60
ID, Drain Current [A]
80
0.001
0.0
100
Figure 5. Capacitance Characteristics
10
VGS, Gate-Source Voltage [V]
Ciss
1000
100
Coss
10
1
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
0.1
0.1
1.5
*Note: ID = 18.5A
VDS = 120V
8
VDS = 300V
VDS = 480V
6
4
2
Crss
1
10
100
VDS, Drain-Source Voltage [V]
©2014 Fairchild Semiconductor Corporation
FCP104N60 Rev. C0
0.3
0.6
0.9
1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
20000
10000
Capacitances [pF]
2
0
600
3
0
14
28
42
56
Qg, Total Gate Charge [nC]
70
www.fairchildsemi.com
FCP104N60 — N-Channel SuperFET® II MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
2.5
*Notes:
1. VGS = 0V
2. ID = 10mA
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
0.8
-100
Figure 8. On-Resistance Variation
vs. Temperature
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
ID, Drain Current [A]
ID, Drain Current [A]
100μs
1ms
1
10ms
DC
*Notes:
0.1
1.0
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
40
10μs
Operation in This Area
is Limited by R DS(on)
1.5
Figure 10. Maximum Drain Current
vs. Case Temperature
300
10
2.0
0.5
-100
200
Figure 9. Maximum Safe Operating Area
100
*Notes:
1. VGS = 10V
2. ID = 18.5A
o
1. TC = 25 C
30
20
10
o
0.01
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
0
25
1000
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Eoss vs. Drain to Source Voltage
20
EOSS, [μJ]
16
12
8
4
0
0
120
240
360
480
VDS, Drain to Source Voltage [V]
©2014 Fairchild Semiconductor Corporation
FCP104N60 Rev. C0
600
4
www.fairchildsemi.com
FCP104N60 — N-Channel SuperFET® II MOSFET
Typical Performance Characteristics (Continued)
FCP104N60 — N-Channel SuperFET® II MOSFET
Typical Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
Thermal Response [ZθJC]
1
0.5
0.1
0.2
0.1
PDM
0.05
0.01
t1
0.02
*Notes:
0.01
o
1. ZθJC(t) = 0.35 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
1E-3
-5
10
©2014 Fairchild Semiconductor Corporation
FCP104N60 Rev. C0
t2
-4
10
-3
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
5
1
10
www.fairchildsemi.com
FCP104N60 — N-Channel SuperFET® II MOSFET
Figure 13. Gate Charge Test Circuit & Waveform
IG = const.
Figure 14. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
VDD
VGS
VGS
DUT
V
10V
GS
90%
10%
td(on)
tr
t on
td(off)
tf
t off
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
©2014 Fairchild Semiconductor Corporation
FCP104N60 Rev. C0
6
www.fairchildsemi.com
FCP104N60 — N-Channel SuperFET® II MOSFET
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
©2014 Fairchild Semiconductor Corporation
FCP104N60 Rev. C0
7
www.fairchildsemi.com
FCP104N60 — N-Channel SuperFET® II MOSFET
Mechanical Dimensions
Figure 17. TO-220, Molded, 3Lead, Jedec Variation AB
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©2014 Fairchild Semiconductor Corporation
FCP104N60 Rev. C0
8
www.fairchildsemi.com
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Datasheet contains the design specifications for product development. Specifications
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Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I68
©2014 Fairchild Semiconductor Corporation
FCP104N60 Rev. C0
9
www.fairchildsemi.com
FCP104N60 — N-Channel SuperFET® II MOSFET
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