ONSEMI BAV70LT3G

Transys
Electronics
L I M I T E D
SOT-23 Plastic-Encapsulated Diodes
BAV70LT1
SWITCHING DIODE
SOT-23
FEATURES
mW(Tamb=25℃)
0. 95
0. 4
2. 9
0. 95
2. 4
1. 3
Forward Current
200 mA
IF:
Reverse Voltage
70
V
VR:
Operating and storage junction temperature range
1. 9
225
PD:
1. 0
Power dissipation
Unit: mm
TJ, Tstg: -55℃ to +15℃
Mar ki ng A4
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Reverse breakdown voltage
Reverse voltage
Forward
Diode
leakage current
voltage
capacitance
Symbol
unless otherwise specified)
Test
conditions
MIN
MAX
UNIT
V(BR)
IR= 100µA
IR
VR=70V
2.5
IF=1mA
715
VF
IF=10mA
855
IF=50mA
1000
IF=150mA
1250
VR=0V,f=1MHz
1.5
pF
6
nS
CD
70
V
µA
mV
IF=IR=10mA
Reverse recovery time
t
rr
IR=1mA ,VR=5V
RC=100Ω