Central CMKD7000E Ultra-high speed silicon switching diode Datasheet

CMKD7000E
SURFACE MOUNT
DUAL PAIR OF
SERIES CONFIGURED
ULTRA-HIGH SPEED SILICON
SWITCHING DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKD7000E is an
enhanced version of the CMKD7000. It consists of two
pair of electrically isolated, series configured ultra-high
speed switching diodes in an ULTRAminiTM SOT-363
surface mount package, designed for ESD protection
and high speed switching applications.
MARKING: K0E
SOT-363 CASE
MAXIMUM RATINGS: (TA=25°C)
♦ Peak Repetitive Reverse Voltage
Average Forward Current
Peak Forward Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
UNITS
VRRM
120
V
IO
200
mA
IFM
500
mA
PD
TJ, Tstg
ΘJA
250
mW
-65 to +150
°C
500
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
IR
IR
IR
♦ BVR
♦ VF
♦ VF
♦ VF
CT
trr
VR=50V
VR=50V (TA=125°C)
VR=100V
IR=100μA
IF=1.0mA
IF=10mA
IF=100mA
VR=0, f=1.0MHz
IR=IF=10mA, RL=100Ω, Rec. to 1.0mA
300
UNITS
nA
100
μA
500
nA
120
150
0.55
0.59
0.65
V
V
0.67
0.72
0.77
V
0.85
0.91
1.0
V
1.5
2.6
pF
2.0
4.0
ns
♦ Enhanced specification.
R0 (2-December 2009)
CMKD7000E
SURFACE MOUNT
DUAL PAIR OF
SERIES CONFIGURED
ULTRA-HIGH SPEED SILICON
SWITCHING DIODES
SOT-363 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) ANODE D1
2) CATHODE D2
3) ANODE D3, CATHODE D4
4) ANODE D4
5) CATHODE D3
6) CATHODE D1, ANODE D2
MARKING CODE: K0E
R0 (2-December 2009)
w w w. c e n t r a l s e m i . c o m
Similar pages