MURS360BT3G, NRVUS360VBT3G, SURS8360BT3G Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction NRVUS and SURS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com ULTRAFAST RECTIFIERS 3 AMPERES 600 VOLTS SMB CASE 403A Mechanical Characteristics • • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−O @ 0.125 in Weight: 95 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Polarity Band Indicates Cathode Lead ESD Rating: ♦ Human Body Model (HBM) 3B (> 8 kV) ♦ Machine Model (MM) C (> 400 V) MARKING DIAGRAM AYWW B36BG G B36B A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 600 V Average Rectified Forward Current IF(AV) 3.0 @ TL = 105°C A Non−Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 100 A Operating Junction Temperature TJ *65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2016 November, 2016 − Rev. 7 1 ORDERING INFORMATION Package Shipping† MURS360BT3G SMB (Pb−Free) 2,500 / Tape & Reel NRVUS360VBT3G SMB (Pb−Free) 2,500 / Tape & Reel NRVUS360VDBT3G SMB (Pb−Free) 2,500 / Tape & Reel SURS8360BT3G SMB (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MURS360BT3/D MURS360BT3G, NRVUS360VBT3G, SURS8360BT3G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) Symbol Value Unit RqJL RqJA 14 125 °C/W Typ Max Unit − 0.83 1.25 1.05 − 95 3.0 150 − − 75 50 − 50 1. Mounted with minimum recommended pad size, PC Board FR4. ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 2) (iF = 3.0 A, TJ = 25°C) (iF = 3.0 A, TJ = 150°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TJ = 25°C) (Rated DC Voltage, TJ = 150°C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/ms) (iF = 0.5 A, iR = 1.0 A, IR to 0.25 A) trr Maximum Forward Recovery Time (iF = 1.0 A, di/dt = 100 A/ms, Rec. to 1.0 V) tfr V mA ns ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 10 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) TYPICAL CHARACTERISTICS 125°C 150°C 25°C 1 0.1 0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 10 125°C 150°C 0.1 0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 0.1 Ir, REVERSE CURRENT (mA) Ir, REVERSE CURRENT (mA) 25°C 1 150°C 0.01 125°C 0.001 0.0001 25°C 0.00001 1 0.1 150°C 0.01 125°C 0.001 0.0001 0.000001 25°C 0.00001 0 100 200 300 400 500 600 0 Vr, REVERSE VOLTAGE (V) 100 200 300 400 500 Vr, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current www.onsemi.com 2 600 MURS360BT3G, NRVUS360VBT3G, SURS8360BT3G TYPICAL CHARACTERISTICS 70 60 C, CAPACITANCE (pF) IF(AV), AVERAGE FORWARD CURRENT (A) 5 TJ = 25°C f = 1 MHz 50 40 30 20 10 0 20 40 60 80 Square 3 2 1 65 100 75 85 95 105 115 125 135 Vr, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Capacitance Figure 6. Current Derating, Lead 145 155 4 3 PF(AV), AVERAGE POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) 4 0 0 RqJA = 71°C/W RqJA = 120°C/W No Heatsink dc 2 dc 1 Square Wave Square Wave TJ = 150°C 3 dc 2 1 0 0 0 25 50 75 100 125 0 150 1 2 3 TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Current Derating, Ambient Figure 8. Typical Forward Power Dissipation 4 10000 4 IFSM, NON−REPETITIVE SURGE CURRENT (A) Square Wave PF(AV), AVERAGE POWER DISSIPATION (W) dc TJ = 150°C dc 3 2 1 0 0 1 2 3 1000 100 10 4 10 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 9. Maximum Forward Power Dissipation 100 1,000 10,000 tp, SQUARE WAVE PULSE DURATION (ms) Figure 10. Typical Non−Repetitive Surge Current *Typical performance based on a limited sample size. ON Semiconductor does not guarantee ratings not listed in the Maximum Ratings table. www.onsemi.com 3 MURS360BT3G, NRVUS360VBT3G, SURS8360BT3G 100 50% Duty Cycle R(t) (°C/W) 10 20% 10% 5% 2% 1 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (s) 1 Figure 11. Thermal Response, Junction−to−Ambient www.onsemi.com 4 10 100 1000 MURS360BT3G, NRVUS360VBT3G, SURS8360BT3G PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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