DIODES DPBT8105

DPBT8105
1A PNP SURFACE MOUNT TRANSISTOR
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Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
High Collector Current Rating
Complementary Version Available (DNBT8105)
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2, 3 and 4)
Qualified to AEC-Q101 Standards for High Reliability
SOT-23
Min
Max
0.37
0.51
1.20
1.40
2.30
2.50
0.89
1.03
0.45
0.60
1.78
2.05
2.80
3.00
0.013
0.10
0.903
1.10
0.45
0.61
0.085 0.180
0°
8°
α
All Dimensions in mm
A
Dim
A
B
C
D
E
G
H
J
K
L
M
C
B
C
B TOP VIEW E
D
E
G
H
Mechanical Data
•
•
•
•
•
•
•
•
K
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: K82, See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
J
M
L
C
E
B
Top View
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Thermal Characteristics
Value
-80
-60
-5
-1
-2
Unit
V
V
V
A
A
Symbol
PD
RθJA
TJ, TSTG
Value
600
209
-55 to +150
Unit
mW
°C/W
°C
@TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
Symbol
VCBO
VCEO
VEBO
IC
ICM
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product is manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants.
DS30514 Rev. 8 - 2
1 of 4
www.diodes.com
DPBT8105
© Diodes Incorporated
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
Symbol
Min
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICES
IEBO
-80
-60
-5
⎯
⎯
⎯
⎯
⎯
⎯
-100
-100
-100
V
V
V
nA
nA
nA
hFE
100
100
80
30
⎯
300
⎯
⎯
-0.3
-0.6
-1.2
-1.0
12
⎯
DC Current Gain
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
VBE(SAT)
VBE(ON)
⎯
⎯
⎯
⎯
Cobo
fT
⎯
150
Notes:
V
V
V
pF
MHz
IC = -100μA, IE = 0
IC = -10mA, IB = 0
IE = -100μA, IC = 0
VCB = -60V, IE = 0
VCES = -60V
VEB = -4V, IC = 0
IC = -1mA, VCE = -5V
IC = -500mA, VCE = -5V
IC = -1A, VCE = -5V
IC = -2A, VCE = -5V
IC = -500mA, IB = -50mA
IC = -1A, IB = -100mA
IC = -1A, IB = -100mA
IC = -1A, VCE = -5V
VCB = -10V, f = 1.0MHz
VCE = -10V, IC = -50mA, f = 100MHz
5. Short duration pulse test used to minimize self-heating effect.
400
800
700
350
PD, POWER DISSIPATION (mW)
Note 1
hFE, DC CURRENT GAIN
600
500
400
300
200
100
300
250
200
150
100
50
0
0
-1
50
75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs. Ambient Temperature
0
25
-1.4
-350
-1.2
-300
VCE (SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (mV)
VBE(SAT), BASE TO EMITTER
SATURATION VOLTAGE (V)
V
Test Condition
-1
-0.8
-0.6
-0.4
-0.2
-250
-200
-150
-100
-50
0
-1
0
-1
-10,000
-100
-1,000
-10
IC, COLLECTOR CURRENT (mA)
Fig. 3, Base-Emitter Saturation Voltage vs. Collector Current
DS30514 Rev. 8 - 2
-10,000
-100
-10
-1,000
IC, COLLECTOR CURRENT (mA)
Fig. 2, DC Current Gain vs. Collector Current
2 of 4
-100
-10
-1,000
IC, COLLECTOR CURRENT (mA)
Fig. 4, Collector-Emitter Saturation Voltage vs. Collector Current
DPBT8105
www.diodes.com
© Diodes Incorporated
-1.2
-800
VBE(ON), BASE EMITTER VOLTAGE (V)
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
-900
-700
-600
-500
-400
-300
-200
-100
-1
-0.8
-0.6
-0.4
-0.2
0
-1
0
-10
-1,000
-100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Collector-Emitter Saturation Voltage vs. Collector Current
-100
-10
-1000
-10,000
IC, COLLECTOR CURRENT (mA)
Fig. 6, Base-Emitter Voltage vs. Collector Current
CAPACITANCE (pF)
-1
VR, REVERSE VOLTAGE (V)
Fig. 7, Capacitance vs. Reverse Voltage
Ordering Information
(Note 6)
Packaging
SOT-23
Device
DPBT8105-7
Notes:
6.
Shipping
3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
K82
Date Code Key
Year
Code
2004
R
2005
S
YM
Marking Information
2006
T
K82 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30514 Rev. 8 - 2
3 of 4
www.diodes.com
DPBT8105
© Diodes Incorporated
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30514 Rev. 8 - 2
4 of 4
www.diodes.com
DPBT8105
© Diodes Incorporated