74LVC1G10 SINGLE 3 INPUT POSITIVE NAND GATE Description Pin Assignments The 74LVC1G10 is a single 3-input positive NAND gate with a standard push-pull output. The device is designed for operation with a power supply range of 1.65V to 5.5V. The inputs are tolerant to 5.5V allowing this device to be used in a mixed voltage environment. The device is fully specified NEW PRODUCT for partial power down applications using IOFF. The IOFF circuitry disables the output preventing damaging current backflow when the device is powered down. The gate performs the positive Boolean function: Y = A •B •C or Y = A +B+C Features Applications • Wide Supply Voltage Range from 1.65V to 5.5V • Voltage Level Shifting • ± 24mA Output Drive at 3.3V • General Purpose Logic • CMOS low power consumption • Power Down Signal Isolation • IOFF Supports Partial-Power-Down Mode Operation • Wide array of products such as: • Inputs accept up to 5.5V o PCs, networking, notebooks, netbooks, PDAs ESD Protection Exceeds JESD 22 o Computer peripherals, hard drives, CD/DVD ROM 200-V Machine Model (A115-A) o TV, DVD, DVR, set top box 2000-V Human Body Model (A114-A) o Cell Phones, Personal Navigation / GPS • Latch-Up Exceeds 100mA per JESD 78, Class II o MP3 players ,Cameras, Video Recorders • Range of Package Options • SOT26, SOT363, DFN1410, and DFN1010: Available in • “Green” Molding Compound (no Br, Sb) • Lead Free Finish/ RoHS Compliant (Note 1) Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at http://www.diodes.com/products/lead_free.html. 74LVC1G10 Document number: DS35121 Rev. 3 - 2 1 of 13 www.diodes.com July 2011 © Diodes Incorporated 74LVC1G10 SINGLE 3 INPUT POSITIVE NAND GATE Pin Descriptions Pin Name Description A GND B Y Data Input Ground Data Input Data Output VCC Supply Voltage NEW PRODUCT C Data Input Logic Diagram 1 A 4 3 6 B C Y Function Table Inputs B A H L X X H X L X C Output Y H X X L L H H H Absolute Maximum Ratings (Note 2) Symbol ESD HBM ESD MM VCC Human Body Model ESD Protection Machine Model ESD Protection Rating Unit 2 200 KV V Supply Voltage Range -0.5 to 6.5 V VI Input Voltage Range -0.5 to 6.5 V VO Voltage applied to output in high impedance or IOFF state VO Voltage applied to output in high or low state -0.5 to 6.5 V -0.3 to VCC +0.5 V IIK Input Clamp Current VI<0 -50 mA IOK Output Clamp Current -50 mA IO Continuous output current ±50 mA Continuous current through Vdd or GND ±100 mA Operating Junction Temperature -40 to 150 °C Storage Temperature -65 to 150 °C TJ TSTG Notes: Description 2. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device operation should be within recommend values. 74LVC1G10 Document number: DS35121 Rev. 3 - 2 2 of 13 www.diodes.com July 2011 © Diodes Incorporated 74LVC1G10 SINGLE 3 INPUT POSITIVE NAND GATE Recommended Operating Conditions (Note 3) Symbol VCC Operating Voltage Parameter Min Max Unit Operating 1.65 5.5 V Data retention only 1.5 VCC = 1.65V to 1.95V NEW PRODUCT VIH High-level Input Voltage VCC = 2.3V to 2.7V VCC = 3V to 3.6V VCC = 4.5V to 5.5V 1.7 Low-level input voltage V 2 0.7 X VCC VCC = 1.65V to 1.95V VIL V 0.65 X VCC 0.35 X VCC VCC = 2.3V to 2.7V 0.7 VCC = 3V to 3.6V 0.8 VCC = 4.5V to 5.5V V 0.3 X VCC VI Input Voltage 0 5.5 V VO Output Voltage 0 VCC V IOH High-level output current VCC = 1.65V -4 VCC = 2.3V -8 -16 VCC = 3V VCC = 4.5V -32 VCC = 1.65V 4 VCC = 2.3V IOL Δt/ΔV TA Notes: Low-level output current Input transition rise or fall rate mA -24 8 16 VCC = 3V mA 24 VCC = 4.5V 32 VCC = 1.8V ± 0.15V, 2.5V ± 0.2V 20 VCC = 3.3V ± 0.3V 10 VCC = 5V ± 0.5V 5 Operating free-air temperature -40 125 ns/V ºC 3. Unused inputs should be held at Vcc or Ground. 74LVC1G10 Document number: DS35121 Rev. 3 - 2 3 of 13 www.diodes.com July 2011 © Diodes Incorporated 74LVC1G10 SINGLE 3 INPUT POSITIVE NAND GATE Electrical Characteristics TA = -40°C to 85°C Symbol Parameter Test Conditions IOH = -100μA VOH High Level Output Voltage (All typical values are at VCC = 3.3V, TA = 25°C) VCC Min 1.65V to 5.5V VCC – 0.1 IOH = -4mA 1.65V 1.2 IOH = -8mA 2.3V IOH = -16mA 3V NEW PRODUCT IOH = -24mA VOL High-level Input Voltage 0.1 IOL = 4mA 1.65V 0.45 IOL = 8mA 2.3V 0.3 3V 3.8 0.4 V 0.55 4.5V 0.55 0 to 5.5V ±5 μA 0 ± 10 μA VI = 5.5V of GND IO=0 1.65V to 5.5V 10 μA Input at VCC –0.6V 3V to 5.5V 500 μA VI = 5.5 V or GND IOFF Power Down Leakage Current VI or VO = 5.5V ICC Supply Current Additional Supply Current Document number: DS35121 Rev. 3 - 2 2.3 1.65V to 5.5V IOL = 16mA Unit V IOL = 100μA IOL = 32mA 74LVC1G10 1.9 2.4 4.5V Input Current ΔICC Max IOH = -32mA IOL = 24mA II Typ. 4 of 13 www.diodes.com July 2011 © Diodes Incorporated 74LVC1G10 SINGLE 3 INPUT POSITIVE NAND GATE Electrical Characteristics TA = -40°C to 125°C (All typical values are at VCC = 3.3V, TA = 25°C) Symbol Parameter Test Conditions VCC Min 1.65V to 5.5V VCC – 0.1 IOH = -4mA 1.65V 0.95 IOH = -8mA 2.3V IOH = -100μA High Level Output Voltage VOH IOH = -16mA 3V NEW PRODUCT IOH = -24mA VOL High-level Input Voltage IOH = -32mA 4.5V IOL = 100μA Max 1.7 V 2.0 3.4 1.65V to 5.5V 0.1 1.65V 0.70 IOL = 8mA 2.3V 0.45 IOL = 16mA V 0.60 3V IOL = 32mA Unit 1.9 IOL = 4mA IOL = 24mA II Typ. 0.80 4.5V 0.80 0 to 5.5V ± 20 μA 0 ± 20 μA Input Current VI = 5.5 V or GND IOFF Power Down Leakage Current VI or VO = 5.5V ICC Supply Current VI = 5.5V of GND IO=0 1.65V to 5.5V 40 μA ΔICC Additional Supply Current Input at VCC –0.6V 3V to 5.5V 5000 μA Ci Input Capacitance Vi = VCC – or GND 3.3 4 θJA Thermal Resistance Junction-to-Ambient SOT26 SOT363 DFN1410 DFN1010 (Note 4) 204 371 430 510 θJC Thermal Resistance Junction-to-Case SOT26 SOT363 DFN1410 DFN1010 (Note 4) 52 143 190 250 pF o C/W o C/W Package Characteristics (All typical values are at Vcc = 3.3V, TA = 25°C) Symbol CI θJA θJC Parameter Test Conditions Input Capacitance VI = VCC – or GND Thermal Resistance Junction-to-Ambient SOT26 SOT363 DFN1410 Thermal Resistance Junction-to-Case VCC 3.3 (Note 4) Typ. 204 371 430 510 SOT26 SOT363 52 143 190 DFN1410 (Note 4) Max Unit 3.5 DFN1010 pF o C/W o C/W 250 DFN1010 Notes: Min 4. Test condition for SOT26, SOT363, DFN1410 and DFN1010 : Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 74LVC1G10 Document number: DS35121 Rev. 3 - 2 5 of 13 www.diodes.com July 2011 © Diodes Incorporated 74LVC1G10 SINGLE 3 INPUT POSITIVE NAND GATE Switching Characteristics TA = -40°C to 85°C, CL = 15pF (see Figure 1) Parameter NEW PRODUCT tpd From (Input) TO (OUTPUT) Any Y VCC = 1.8V ± 0.15V VCC = 2.5V ± 0.2V VCC = 3.3V ± 0.3V VCC = 5V ± 0.5V Min Max Min Max Min Max Min Max 1.0 14.8 0.7 5.5 0.7 3.8 0.7 2.7 Unit ns TA = -40°C to 85°C, CL = 30 or 50pF (see Figure 2) Parameter tpd From (Input) TO (OUTPUT) Any Y VCC = 1.8V ± 0.15V VCC = 2.5V ± 0.2V VCC = 3.3V ± 0.3V VCC = 5V ± 0.5V Min Max Min Max Min Max Min Max 1.0 18.0 0.7 6.5 0.7 5 0.7 3.6 Unit ns TA = -40°C to 125°C, CL = 15 pF (see Figure 1) Parameter From (Input) TO (OUTPUT) tpd Any Y VCC = 1.8V ± 0.15V Min Max 1.0 17.7 VCC = 2.5V ± 0.2V Min Max 0.7 6.6 VCC = 3.3V ± 0.3V Min Max 0.7 4.6 VCC = 5V ± 0.5V Min Max VCC = 3.3V ± 0.3V Min Max 0.7 6.0 VCC = 5V ± 0.5V Min Max 0.7 3.3 Unit ns TA = -40°C to 125°C , CL = 30 or 50pF (see Figure 2) Parameter From (Input) TO (OUTPUT) tpd Any Y VCC = 1.8V ± 0.15V Min Max 1.0 21.6 VCC = 2.5V ± 0.2V Min Max 0.7 7.8 0.7 4.3 Unit ns Operating Characteristics TA = 25 ºC Parameter Cpd Power dissipation capacitance 74LVC1G10 Document number: DS35121 Rev. 3 - 2 Test Conditions VCC = 1.8V VCC = 2.5V VCC = 3.3V VCC = 5V Typ. Typ. Typ. Typ. f = 10 MHz 17 18 19 22 6 of 13 www.diodes.com Unit pF July 2011 © Diodes Incorporated 74LVC1G10 SINGLE 3 INPUT POSITIVE NAND GATE NEW PRODUCT Parameter Measurement Information Inputs VCC VM CL RL ≤2ns VCC/2 15pF 1MΩ ≤2ns VCC/2 15pF 1MΩ ≤2.5ns ≤2.5ns 1.5V VCC/2 15pF 15pF 1MΩ 1MΩ VI tr/tf 1.8V±0.15V VCC 2.5V±0.2V VCC 3.3V±0.3V 5V±0.5V 3V VCC Voltage Waveform Pulse Duration Voltage Waveform Propagation Delay Times Inverting and Non Inverting Outputs Figure 1. Load Circuit and Voltage Waveforms Notes: A. B. C. D. Includes test lead and test apparatus capacitance. All pulses are supplied at pulse repetition rate ≤ 10 MHz Inputs are measured separately one transition per measurement tPLH and tPHL are the same as tPD 74LVC1G10 Document number: DS35121 Rev. 3 - 2 7 of 13 www.diodes.com July 2011 © Diodes Incorporated 74LVC1G10 SINGLE 3 INPUT POSITIVE NAND GATE NEW PRODUCT Parameter Measurement Information (cont.) VCC Inputs VM CL ≤2ns VCC/2 30pF 1KΩ ≤2ns VCC/2 30pF 500Ω ≤2.5ns ≤2.5ns 1.5V VCC/2 50pF 50pF 500Ω 500Ω VI tr/tf 1.8V±0.15V VCC 2.5V±0.2V VCC 3.3V±0.3V 5V±0.5V 3V VCC RL Voltage Waveform Pulse Duration Voltage Waveform Propagation Delay Times Inverting and Non Inverting Outputs Figure 2. Load Circuit and Voltage Waveforms Notes: A . Includes test lead and test apparatus capacitance. B. All pulses are supplied at pulse repetition rate ≤ 10 MHz C. Inputs are measured separately one transition per measurement D. tPLH and tPHL are the same as tPD 74LVC1G10 Document number: DS35121 Rev. 3 - 2 8 of 13 www.diodes.com July 2011 © Diodes Incorporated 74LVC1G10 SINGLE 3 INPUT POSITIVE NAND GATE NEW PRODUCT Ordering Information Device Packaging (Note 7) Quantity W6 DW FW4 FZ4 SOT26 SOT363 DFN1010 DFN1410 3000/Tape & Reel 3000/Tape & Reel 5000/Tape & Reel 5000/Tape & Reel 74LVC1G10W6-7 74LVC1G10DW-7 74LVC1G10FW4-7 74LVC1G10FZ4-7 Notes: 7” Tape and Reel Part Number Suffix Package Code -7 -7 -7 -7 5. Pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 6. The taping orientation is located on our website at http://www.diodes.com/datasheets/ap02007.pdf 74LVC1G10 Document number: DS35121 Rev. 3 - 2 9 of 13 www.diodes.com July 2011 © Diodes Incorporated 74LVC1G10 SINGLE 3 INPUT POSITIVE NAND GATE Marking Information NEW PRODUCT (1) SOT26, SOT363 Part Number Package Identification Code 74LVC1G10W6 74LVC1G10DW SOT26 SOT363 TU TU Part Number Package Identification Code 74LVC1G10FW4 74LVC1G10FZ4 DFN1010 DFN1410 TU TU (2) DFN1010, DFN1410 74LVC1G10 Document number: DS35121 Rev. 3 - 2 10 of 13 www.diodes.com July 2011 © Diodes Incorporated 74LVC1G10 SINGLE 3 INPUT POSITIVE NAND GATE Package Outline Dimensions (All Dimensions in mm) NEW PRODUCT (1) Package Type: SOT26 (2) Package Type: SOT363 C L 0.10/0.30 CL 1.9 C L 1.15/1.35 6x-0.42 C L 6x-0.60 2.0/2.2 4x-0.65 PIN 1 0.40/0.45 0.65Bsc. Land Pattern Recommendation (unit:mm) 1.8/2.2 0.1/0.22 0.9/1.0 0/0.1 1.10Max. CL "A" Detail"A" 74LVC1G10 Document number: DS35121 Rev. 3 - 2 0°/8 0.25/0.40 ° 0.25 Gauge Plane 11 of 13 www.diodes.com July 2011 © Diodes Incorporated 74LVC1G10 SINGLE 3 INPUT POSITIVE NAND GATE 0.40Max. 0.08 C 0.08 C A Pin1 0.35Typ. 0.15Min. 0.14/0.20(6x) 0.07Typ. 0.15Min. 2X0.05/0.15 0.95/1.05 0.35Typ. Pin1 0.35/0.45(6x) 2x- 0.20(6x) 0.235 0.95/1.05 Land Pattern Recommendation (unit:mm) Top View C A B 0.07 Bottom View C Side View 1.35/1.45 0.550 2X- 6x-0.25 6x-0.35 Seating Plane 0.25 A 0.08 C 0.13Typ. 0.40Max. 0.10 C 6x- 0/0.05 (4) Package Type DFN1410 A 0.50Typ. 2X- (Pin #1 ID) X 45¢ . 1x C0 0.075¡ 0Ó.030 6x-0.25/0.35 B 0.95/1.05 NEW PRODUCT B C 0.45(6x) Seating Plane Side View 0/0.05 0.08 C 0.15 0.05 C 6x- 0.13Typ. (3) Package Type: DFN1010 4x-0.50Typ. Land Pattern Recommendation (mm) Top View 0.25 B 0.10(4x) 6x-0.15/0.25 0.10 C A B Bottom View 74LVC1G10 Document number: DS35121 Rev. 3 - 2 12 of 13 www.diodes.com July 2011 © Diodes Incorporated 74LVC1G10 SINGLE 3 INPUT POSITIVE NAND GATE IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). NEW PRODUCT Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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