Diotec BC807-25 Surface mount si-epitaxial planartransistor Datasheet

BC 807 / BC 808
General Purpose Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
PNP
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
1.1
2.9 ±0.1
0.4
1.3 ±0.1
2.5 max
3
Type
Code
2
1
310 mW
1.9
Dimensions / Maße in mm
1=B
2=E
3=C
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BC 807
BC 808
Collector-Emitter-voltage
B open
- VCE0
45 V
25 V
Collector-Emitter-voltage
B shorted
- VCES
50 V
30 V
Collector-Base-voltage
E open
- VCB0
50 V
30 V
Emitter-Base-voltage
C open
- VEB0
5V
Power dissipation – Verlustleistung
Ptot
310 mW 1)
Collector current – Kollektorstrom (DC)
- IC
800 mA
Peak Coll. current – Kollektor-Spitzenstrom
- ICM
1000 mA
Peak Base current – Basis-Spitzenstrom
- IBM
200 mA
Peak Emitter current – Emitter-Spitzenstrom
IEM
1000 mA
Junction temperature – Sperrschichttemperatur
Tj
150/C
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150/C
Characteristics, Tj = 25/C
Kennwerte, Tj = 25/C
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 1 V, - IC = 100 mA
- VCE = 1 V, - IC = 500 mA
- VCE = 1 V, - IC = 100 mA
1
BC807
BC808
hFE
100
–
600
hFE
40
–
–
Group -16
hFE
100
160
250
Group -25
hFE
160
250
400
Group -40
hFE
250
400
600
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2
01.11.2003
General Purpose Transistors
BC 807 / BC 808
Characteristics, Tj = 25/C
Kennwerte, Tj = 25/C
Min.
Typ.
Max.
–
–
0.7 V
- VBEsat
–
–
1.3 V
- VBE
–
–
1.2 V
Collector saturation voltage – Kollektor-Sättigungsspg.
- IC = 500 mA, - IB = 50 mA
- VCEsat
Base saturation voltage – Basis-Sättigungsspannung
- IC = 500 mA, - IB = 50 mA
Base-Emitter voltage – Basis-Emitter-Spannung
- VCE = 1 V, - IC = 500 mA
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 20 V
- ICB0
–
–
100 nA
IE = 0, - VCB = 20 V, Tj = 150/C
- ICB0
–
–
5 :A
- IEB0
–
–
100 nA
80 MHz
100 MHz
–
–
12 pF
–
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 4 V
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 50 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Marking of available current gain
groups per type
Stempelung der lieferbaren Stromverstärkungsgruppen pro Typ
320 K/W 1)
RthA
BC 817 / BC 818
BC 807-16 = 5A BC 807-25 = 5B
BC 807-40 = 5C
BC 807 = 5D
BC 808-16 = 5E
BC 808-25 = 5F
BC 808-40 = 5G
BC 808 = 5H
1
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
3
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